Design of Experiments for Stator Windings Insulation Degradation under High dv/dt and High Switching Frequency

Author(s):  
Fernando Alvarez-Gonzalez ◽  
David Hewitt ◽  
Antonio Griffo ◽  
Jiabin Wang ◽  
Mohamed Diab ◽  
...  
Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1738
Author(s):  
Vanessa Neves Höpner ◽  
Volmir Eugênio Wilhelm

The use of static frequency converters, which have a high switching frequency, generates voltage pulses with a high rate of change over time. In combination with cable and motor impedance, this generates repetitive overvoltage at the motor terminals, influencing the occurrence of partial discharges between conductors, causing degradation of the insulation of electric motors. Understanding the effects resulting from the frequency converter–electric motor interaction is essential for developing and implementing insulation systems with characteristics that support the most diverse applications, have an operating life under economically viable conditions, and promote energy efficiency. With this objective, a search was carried out in three recognized databases. Duplicate articles were eliminated, resulting in 1069 articles, which were systematically categorized and reviewed, resulting in 481 articles discussing the causes of degradation in the insulation of electric motors powered by frequency converters. A bibliographic portfolio was built and evaluated, with 230 articles that present results on the factors that can be used in estimating the life span of electric motor insulation. In this structure, the historical evolution of the collected information, the authors who conducted the most research on the theme, and the relevance of the knowledge presented in the works were considered.


2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.


Author(s):  
Roghayeh Gavagsaz-Ghoachani ◽  
Matheepot Phattanasak ◽  
Majid Zandi ◽  
Jean-Philippe Martin ◽  
Babak Nahid-Mobarakeh ◽  
...  

Author(s):  
Nur Arifah Ramli ◽  
Auzani Jidin ◽  
Zulhani Rasin ◽  
Tole Sutikno

Alternating current (AC) electrical drives mainly require smaller current (or torque) ripples and lower total harmonic distortion (THD) of voltage for excellent drive performances. Normally, in practice, to achieve these requirements, the inverter needs to be operated at high switching frequency. By operating at high switching frequency, the size of filter can be reduced. However, the inverter which oftenly employs insulated gate bipolar transistor (IGBT) for high power applications cannot be operated at high switching frequency. This is because, the IGBT switching frequency cannot be operated above 50 kHz due to its thermal restrictions. This paper proposes an alternate switching strategy to enable the use of IGBT for operating the inverter at high switching frequency to improve THD performances. In this strategy, each IGBT in a group of switches in the modified inverter circuit will operate the switching frequency at one-fourth of the inverter switching frequency. The alternate switching is implemented using simple analog and digital integrated circuits.


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