Thermal Sensitivity of Dielectric Materials in High-Speed Designs

2020 ◽  
Author(s):  
Sunil Pathania ◽  
Bhyrav Mutnury ◽  
Mallikarjun Vasa ◽  
Vijender Kumar ◽  
Sukumar Muthusamy ◽  
...  
Keyword(s):  
High Speed ◽  
Thermal Sensitivity ◽  
Dielectric Materials

Parametric Thermal Sensitivity Analysis of 225kW High Speed PMSM for Blower Application

2021 ◽  
Author(s):  
Usman Abubakar ◽  
Xiaoyuan Wang ◽  
Sayyed Haleem Shah ◽  
Sadiq Ur rahman
Keyword(s):  
Sensitivity Analysis ◽  
High Speed ◽  
Thermal Sensitivity

Various Levels of Drop Analysis for BGA in Mobile Phones

2007 ◽  
Author(s):  
Takayoshi Katahira ◽  
Masato Fujita ◽  
Tsuyoki Shibata ◽  
Masaki Shiratori ◽  
Qiang Yu
Keyword(s):  
Mobile Phones ◽  
High Speed ◽  
Dielectric Materials ◽  
System Level ◽  
Detailed Model ◽  
Multiple Devices ◽  
Micro Level ◽  
Orthotropic Properties ◽  
Board Level ◽  
Ic Package

To final product quality of mobile phones, key reliability requirements are drop, bend and thermal cycling. Especially in terms of IC-device, drop reliability is the most significant of the three, and also difficult to optimize since it is a dynamic phenomenon in high speed and drop reliability is influenced by 1) system-level factors, 2) board-level and 3) micro-level. In this paper, system-level is defined as phone-level drop, specifically simplified mono-block phone including multiple devices on PWB. System-level enables to evaluate various factors, drop height, drop directions, materials to drop on, phone weight and phone mechanics. Board-level indicates IC-package, PWB and solder joints connecting in between. The board-assembled PWB is fixed onto fixture at 2∼6 points. Drop direction is flat drop only. This paper defines micro level as more detailed model than board level. PWB is modeled as composite structure consisting of dielectric materials with orthotropic properties, copper layers and micro via. IC-package is modeled as well. System level drop shows significant differences in drop directions and also the interactions between drop direction and component location. Micro level simulation results are well-correlative with experimental in failure mode. This paper will discuss overview of 3 levels of drop modeling and will focus on micro level and system level analysis in conjunction with board level.

Necessity of Cleaning and its Application in Future Memory Devices

2014 ◽  
Vol 219 ◽  
pp. 3-10 ◽  
Author(s):  
Geun Min Choi
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Semiconductor Industry ◽  
Cell Structure ◽  
Etching Rate ◽  
Dielectric Materials ◽  
Device Fabrication ◽  
Native Oxide ◽  
Device Integration ◽  
Metallic Impurities

Concerning the processes of the semiconductor industry, device integration is increasing and cell structure is becoming more complicated, which brings many new kinds of challenges. The basic requirements for a future integration device are minimum feature size reduction with device integration and high-speed operation with sufficient cell capacitance. Many kinds of conventional films including electrode and dielectric materials should be altered to meet device requirements. Moreover, as the allowance level for contaminants on substrate surfaces becomes more stringent, the importance of removing them becomes even greater. Because of this, the semiconductor process for high quality device fabrication will never be realized without perfect cleaning on all surfaces. It is reported that the conventional cleaning solutions such as a NH4OH/H2O2/H2O (SC-1) solution (1:4:20, 80 °C), H2SO4/H2O2 (SPM) solution (4:1, 90 to 120°C), and HCl/H2O2/H2O (HPM) solution (1:1:6, 80 to 90°C) are not compatible with metal film exposed surfaces with very tiny patterns, due to the fast etching rate of metal films [1] . In 1995, at the base of the mechanism of the removal of the adhered contaminants such as metallic impurities, particles and organics, T. Ohmi proposed a total room temperature wet cleaning process (so called “UCT cleaning”) [2]. As a result of the continuous research on developed cleaning, the five steps process was revised to a four step room temperature wet cleaning for real device cleaning. The cleaning consists of 1) CO2 added O3-UPW cleaning for removing organic and metallic impurities, 2) NH3 added H2-UPW+MS cleaning for removing of particles, 3) HF/H2O2(FPM) cleaning for removing metallic impurities, and 4) H2-UPW+MS rinse for the removal of chemical residues, prevention of particle re-adhesion, suppression of native oxide growth, and enhancement of H-termination.

scholarly journals Optical diagnostics of a dielectric surface discharge in the triggered vacuum gap using various dielectric materials

2021 ◽  
Vol 2059 (1) ◽  
pp. 012006
Author(s):  
S G Davydov ◽  
A N Dolgov ◽  
A A Kozlov ◽  
V A Maksimov ◽  
R Kh Yakubov
Keyword(s):  
Visible Light ◽  
High Speed ◽  
Dielectric Material ◽  
Dielectric Materials ◽  
Dielectric Surface ◽  
Surface Discharge ◽  
High Speed Imaging ◽  
Discharge Behavior ◽  
Electrode Systems ◽  
Vacuum Gap

Abstract High-speed imaging and visible light stereomicroscopy were applied to do researches, which allowed us to find out differences in a dielectric surface discharge behavior in the triggered vacuum gap, when various dielectric materials (mica, muscovite and corundum-type ceramics) were used. Images of the discharge and the erosion in the electrode systems were analized to reveal that at the discharge on the ceramics surface a material of electrodes was mostly involved as a plasma-forming matter and on the mica it is the dielectric material.

scholarly journals The Method of Express Measurement of Moisture of Bulk Material During Pneumo Transport Process in the Pharmaceutical Industry, Based on the Pockels Effect (Review)

2019 ◽  
Vol 8 (3) ◽  
pp. 40-43
Author(s):  
V. G. Gulyaev ◽  
I. V. Gulyaev
Keyword(s):  
Pharmaceutical Industry ◽  
Moisture Content ◽  
High Speed ◽  
Dielectric Material ◽  
Bulk Material ◽  
Dielectric Materials ◽  
Pneumatic Transport ◽  
Pockels Effect ◽  
Moisture Measurement ◽  
Pharmaceutical Production

Introduction. The article presents data on the development and implementation of a method for measuring the moisture content of bulk material during its pneumatic transport in pharmaceutical production. The method of measuring moisture is theoretically based on the physical Pockels effect. An analysis of the currently existing pharmacopoeial methods for monitoring the quantitative water content and methods of in-process control of the drying process is presented. The development of new methods and technical means that provide the necessary speed and accuracy of moisture measurement is an important task, especially in the pharmaceutical industry to control the residual moisture of the starting materials, intermediate products during their production and finished products.Text. Analysis of the theoretical assumptions for the method and technical systems for measuring the mass of bulk dielectric materials during their pneumatic conveying shows the ability to measure the moisture content of the bulk dielectric material transported by air through a pipeline in a new non-contact manner. The proposed method is based on one measurable parameter – the intensity of the light wave passing through the Pockels cell. A block diagram of the system developed by the authors for automated moisture measurement of bulk dielectric materials with an electrooptical Poсkels cell is presented. The article describes a method for measuring moisture, based on the Pockels effect, for bulk material during its pneumatic transport.Conclusion. The proposed method of measuring moisture is contactless, just technically feasible, has a high speed and measurement accuracy, since it is based on the Pockels effect. The method is universal for determining the moisture content of bulk dielectric materials in the process of their pneumatic transportation. The above advantages of this method suggest the possibility of its successful application in pharmaceutical production.

In-Situ Evaluation of High Frequency and High Temperature Characteristics of Dielectric in High-Density Substrate

2007 ◽  
Author(s):  
Youhong Wu ◽  
Shinobu Kato ◽  
DongDong Wang ◽  
Toshimasa Matsuoka ◽  
Kenji Taniguchi
Keyword(s):  
Material Properties ◽  
High Speed ◽  
Dielectric Material ◽  
Propagation Constant ◽  
Characteristic Impedance ◽  
Dielectric Materials ◽  
Actual Process ◽  
Process Technology ◽  
Temperature Dependent

To design a high-speed/frequency system, the dielectric material properties, i.e., dielectric constant and loss tangent are key inputs and their frequency and temperature dependency need to be “in situ” comprehended accurately, since important high-speed quantities, such as characteristic impedance, propagation constant and S-parameters, depend upon the physical dimensions and dielectric material properties of transmission line. This paper investigates frequency and temperature dependent properties of dielectric materials used for high performance microelectronic substrate up to 40 GHz under −40 to 200 deg C, with a general-purpose vector network analyzer (VNA) for obtaining S-parameter of “in situ” test coupons fabricated utilizing the actual process technology. Based on this “in situ” measurement, impact of the frequency and temperature dependent dielectric material properties on the high-speed quantities also have been discussed.

scholarly journals Design and Performance Analysis of Low Power High Speed CNTFET Binary Content Addressable Memory Cell for Next Generation Communication Networks

2019 ◽  
Vol 9 (2) ◽  
pp. 8-15
Keyword(s):  
Low Power ◽  
Communication Networks ◽  
High Speed ◽  
Average Power ◽  
Memory Cell ◽  
Dielectric Materials ◽  
Content Addressable Memory ◽  
Adiabatic Logic ◽  
Effect Transistor ◽  
And Performance

In this paper, Carbon Nanotube Field Effect Transistor (CNTFET) based Binary Content Addressable Memory (BCAM) cells are proposed. The adiabatic logic is integrated with the proposed BCAM cells to improve performance. The performance of proposed BCAM cells is presented for various CNTFET parameters such as number of tubes, chirality vector, pitch value, dielectric constant and dielectric materials. It also explores the optimum set of CNTFET parameters for low power and high speed characteristics of the proposed BCAM cells. Simulation results show an improvement in the average power and delay of proposed BCAM cells. The average power of the proposed BCAM cells is in the order of nano watts while the CMOS based BCAM cells is in the order of micro watts. The delay of the proposed BCAM cells is improved by 56.4 %. All simulations are conducted for both CMOS and CNTFET based BCAM cells in HSPICE at 32 nm technology

Hardware Development of Electrical Capacitance Tomography (ECT) System with Capacitance Sensor for Liquid Measurements

2015 ◽  
Vol 73 (6) ◽  
Author(s):  
Chan Kok Seong ◽  
Jaysuman Pusppanathan ◽  
Ruzairi Abdul Rahim ◽  
Goh Chiew Loon ◽  
Yvette Shaan-Li Susiapan ◽  
...  
Keyword(s):  
High Speed ◽  
Data Transfer ◽  
Control Unit ◽  
Dielectric Materials ◽  
Image Resolution ◽  
Electrical Capacitance Tomography ◽  
Electrical Capacitance ◽  
Full Speed ◽  
High Speed Data ◽  
Capacitance Tomography

Electrical capacitance tomography system is useful for obtaining information about the spatial distribution of a mixture of dielectric materials inside a vessel. This research aims to obtain real-time monitoring on the composition for liquid mixture in conveying pipeline. ECT is a non-invasive, non-intrusive and non-destructive technique that can measure the flow level inside a pipeline. In order to increase the image resolution and accuracy of current tomography research, a study on 16 electrodes sensor ECT system has been developed. The developed system has the flexibility to be assembled and moved from a pipeline to another. The intelligent on-board flexibility and mobility sensor technique is a new technique for ECT system. The system can be assembled in different diameter sizes of pipeline, and numbers of electrodes sensor can be reduced accordingly depending on the pipeline sizes without the need to redesign the electrodes sensor. The new design is equipped with high speed data processing rate data acquisition system and high speed data reconstruction. A microcontroller that support full-speed USB data transfer rate has been designed as the centralization control unit. In order to improve data result, iterative algorithm has been implemented in this system in order to obtain a precise image of the flow in the pipeline. As a result, the ECT system is able to reconstruct various multiphase flow images. 

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