scholarly journals Focused Ion Beam Induced Effects on MOS Transistor Parameters

1999 ◽  
Author(s):  
Ann N. Campbell ◽  
Paiboon Tangyunyong ◽  
Jeffrey R. Jessing ◽  
Charles E. Hembree ◽  
Daniel M. Fleetwood ◽  
...  
Keyword(s):  
Dose Rate ◽  
Threshold Voltage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mos Transistors ◽  
Exposed Area ◽  
Mos Transistor ◽  
Metal Layers ◽  
Physical Dimensions ◽  
Exposure Conditions

Abstract We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in transistor parameters (such as threshold voltage, Vt) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 μm and 0.225 μm technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon

1984 ◽  
Vol 23 (Part 2, No. 6) ◽  
pp. L417-L420 ◽  
Author(s):  
Masao Tamura ◽  
Shoji Shukuri ◽  
Tohru Ishitani ◽  
Masakazu Ichikawa ◽  
Takahisa Doi
Keyword(s):  
Dose Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Dose Rate ◽  
Rate Effect ◽  
High Dose ◽  
Boron Implantation ◽  
Dose Rate Effect

Magnetic Head Shorting Failure Analysis

2017 ◽  
Author(s):  
Liang Hong ◽  
Jia Li ◽  
Haifeng Wang
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Resistance Change ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Failure Analysis ◽  
Metal Layers

Abstract This paper provides an innovative root cause failure analysis method that combines multiple failure analysis (FA) techniques to narrow down and expose the shorting location and allow the material analysis of the shorting defect. It begins with a basic electrical testing to narrow down shorting metal layers, then utilizing mechanical lapping to expose over coat layers. This is followed by optical beam induced resistance change imaging to further narrow down the shorting location. Scanning electron microscopy and optical imaging are used together with focused ion beam milling to slice and view through the potential shorting area until the shorting defect is exposed. Finally, transmission electron microscopy (TEM) sample is prepared, and TEM analysis is carried out to pin point the root cause of the shorting. This method has been demonstrated successfully on Western Digital inter-metal layers shorting FA.

Dose‐rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam

1996 ◽  
Vol 80 (7) ◽  
pp. 3727-3733 ◽  
Author(s):  
Christian R. Musil ◽  
John Melngailis ◽  
Sergey Etchin ◽  
Tony E. Haynes
Keyword(s):  
Dose Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Rate Effects ◽  
Rate Effects

A Novel Fault Isolation Technique for Identifying Deep Sub-Micron Defects

2003 ◽  
Author(s):  
Fayik M. Bundhoo ◽  
Soundaranathan Kasivisvanatha
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Fault Isolation ◽  
Crystalline Lattice ◽  
Isolation Technique ◽  
Silicon Lattice ◽  
Root Cause ◽  
Wet Chemical ◽  
Metal Layers

Abstract A novel failure analysis approach has been developed to isolate and characterize deep sub micron defects in P<100>- silicon lattice. This technique utilizes unique wet chemical deprocessing and side wall cleaning in conjunction with focused ion beam milling to isolate a single vertical failing DMOS source contact from a parallel array of 462K contacts covered with oxide dielectric and top metal layers. The two methods of analysis and root cause of crystalline lattice dislocation in a vertical DMOS transistor are discussed. TEM examination of implanted dopant interface was carried out in order to determine the nature and origin of lattice dislocations. A study1 indicates that lattice dislocations are generated by deep boron and arsenic implants that are not adequately annealed. In our analysis, these dislocations were observed as loop pairs causing low-level leakage that did not initially allow the part to fail. However, these silicon lattice dislocations do pose reliability issues.

scholarly journals Fast and Effective Sample Preparation Technique for Backside Fault Isolation on GaN Packaged Devices

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Fault Isolation ◽  
Preparation Technique ◽  
Laser Marking ◽  
Sample Preparation Technique ◽  
P Type ◽  
Metal Layers

Abstract This paper describes a fast and effective sample preparation method to allow backside fault localization on GaN package devices. Backside analysis by Photon Emission Microscopy (PEM) is becoming preferable to frontside analysis when the die is covered by metal layers. This paper describes an optimized method for backside sample preparation on GaN package devices having a thick heavily doped p-type silicon substrate. The method combines mechanical and chemical deprocessing steps, resulting in a fast and effective sample preparation technique for PEM analysis. Additionally, the laser marking process parameters to facilitate orientation during the final physical failure analysis by Focused Ion Beam (FIB) are also shared.

AN ACCURATE AND MATCHING-FREE THRESHOLD-VOLTAGE MEASUREMENT SYSTEM FOR FLOATING-GATE MOS TRANSISTORS

2005 ◽  
Vol 14 (03) ◽  
pp. 423-437
Author(s):  
AN SANG HOU
Keyword(s):  
Measurement System ◽  
Threshold Voltage ◽  
Floating Gate ◽  
Mos Transistors ◽  
Voltage Measurement ◽  
Time System ◽  
Real Time System ◽  
Mos Transistor ◽  
Threshold Voltages ◽  
And Control

Due to its programmable threshold-voltage characteristic, the floating-gate MOS transistor (FGT) plays an important role in the low-power applications. To tune the threshold voltages of FGTs accurately, a real-time system is presented to measure the threshold voltages. The system includes decoders, analog multiplexers, threshold-voltage measurement block, A/D converter and 32-bit advanced RISC machine (ARM). The feedback technique is applied so that the threshold voltages of FGTs can be measured with high accuracy. The measurement error lies in the range of ±0.3% with 16-bit A/D converter, and there has no constraint on the choice of capacitances between floating-gate and control-gate. The proposed measurement system does not require any matched component. The mathematical models of threshold-voltage measurement block are also presented. Thus, the accuracy of threshold-voltage measurements can be verified with these models.

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