Challenges of super high thermal performance adhesive in power device application

2014 ◽  
Author(s):  
Tan Wei Hing ◽  
Paing Samsun ◽  
Wang Hui Teng
Keyword(s):  
Thermal Performance ◽  
Power Device ◽  
Device Application

Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application

2018 ◽  
Vol 5 (6) ◽  
pp. 065020
Author(s):  
Abu Hussein Nurul Athirah ◽  
Ang Bee Chin ◽  
Wong Yew Hoong ◽  
Ong Boon Hoong ◽  
Baharuddin Aainaa Aqilah
Keyword(s):  
Silicon Substrate ◽  
Power Device ◽  
Synthesis And Characterization ◽  
Device Application

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

2009 ◽  
Vol 615-617 ◽  
pp. 141-144 ◽  
Author(s):  
Ryo Hattori ◽  
Kazuhito Kamei ◽  
Kazuhiko Kusunoki ◽  
Nobuyoshi Yashiro ◽  
S. Shimosaki
Keyword(s):  
Liquid Phase ◽  
Epitaxial Layer ◽  
Liquid Phase Epitaxy ◽  
Basal Plane ◽  
Power Device ◽  
Device Application ◽  
Basal Plane Dislocation ◽  
Low Nitrogen

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

scholarly journals Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

2018 ◽  
Vol 458 ◽  
pp. 949-953 ◽  
Author(s):  
Haiding Sun ◽  
Young Jae Park ◽  
Kuang-Hui Li ◽  
Xinwei Liu ◽  
Theeradetch Detchprohm ◽  
...  
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Power Device ◽  
Band Offset ◽  
Device Application ◽  
Conduction Band Offset
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