Temperature Coefficient of Frequency in Silicon-Based Cross-Sectional Quasi Lam e; Mode Resonators

2018 ◽  
Author(s):  
Sarah Shahraini ◽  
Reza Abdolvand ◽  
Hedy Fatemi
Keyword(s):  
Temperature Coefficient ◽  
Cross Sectional ◽  
Temperature Coefficient Of Frequency ◽  
Silicon Based

Simulation and Analysis of the Temperature-Compensated FBAR

2015 ◽  
Vol 719-720 ◽  
pp. 490-495
Author(s):  
Bin Zhou ◽  
Yang Gao ◽  
Yi He ◽  
Wan Jing He
Keyword(s):  
Temperature Coefficient ◽  
Electromechanical Coupling ◽  
Positive Temperature Coefficient ◽  
Frequency Drift ◽  
Center Frequency ◽  
Positive Temperature ◽  
Analysis Software ◽  
Element Analysis ◽  
Simulated Temperature ◽  
Temperature Coefficient Of Frequency

The property of temperature-frequency drift has an effect on the passband ripples, center frequency and insertion loss of FBAR filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo/AlN/Mo FBAR is achieved by means of finite element analysis software ANSYS, the simulated temperature coefficient of frequency is about-35ppm/°C within the temperature range of-50°C~150°C. By adding a compensated layer with positive temperature coefficient in the FBAR structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature coefficient of frequency of designed temperature compensated FBAR, which composed of Mo/AlN/SiO2/Mo, is about 0.8ppm/°C, the property of temperature-frequency drift is effectively improved.

Experimental investigation on the thermal performance of Si micro-heat pipe with different cross-sections

2017 ◽  
Vol 31 (30) ◽  
pp. 1750279 ◽  
Author(s):  
Mohammad Hamidnia ◽  
Yi Luo ◽  
Xiaodong Wang ◽  
Congming Li
Keyword(s):  
Thermal Management ◽  
Thermal Performance ◽  
Cross Sections ◽  
Integrated Circuit ◽  
Thermal Characteristics ◽  
Cost Savings ◽  
Working Fluid ◽  
Cross Sectional ◽  
Si Substrates ◽  
Silicon Based

Increasing component densities of the integrated circuit (IC) and packaging levels has led to thermal management problems. Si substrates with embedded micro-heat pipes (MHPs) couple good thermal characteristics and cost savings associated with IC batch processing. The thermal performance of MHP is intimately related to the cross-sectional geometry. Different cross-sections are designed in order to enhance the backflow of working fluid. In this experimental study, three different Si MHPs with same hydraulic diameter and various cross-sections are fabricated by micro-fabrication methods and tested under different conditions of fluid charge ratios. The results show that the trapezoidal MHP associated with rectangular artery which is charged with 40% of vapor chamber’s volume has the best thermal performance. This silicon-based MHP is a passive approach for thermal management, which could widen applications in the commercial electronics industry and LED lightings.

scholarly journals Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

2019 ◽  
Vol 9 (9) ◽  
pp. 1895 ◽  
Author(s):  
Oves Badami ◽  
Cristina Medina-Bailon ◽  
Salim Berrada ◽  
Hamilton Carrillo-Nunez ◽  
Jaeyhun Lee ◽  
...  
Keyword(s):  
Band Structure ◽  
Cross Section ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Simulation Software ◽  
Cross Sectional ◽  
Electronic Band ◽  
Effective Masses ◽  
Simulation Engine ◽  
Silicon Based

The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure on the cross-section dimensions and shape. This has to be accounted for in transport simulations due to the significant impact of the effective masses on quantum confinement effects and mobility. In this article, we present a methodology for the extraction of the electron effective masses, in both confinement and the transport directions, from the simulated electronic band structure of the nanowire channel. This methodology has been implemented in our in-house three-dimensional (3D) simulation engine, NESS (Nano-Electronic Simulation Software). We provide comprehensive data for the effective masses of the silicon-based nanowire transistors (NWTs) with technologically relevant cross-sectional area and transport orientations. We demonstrate the importance of the correct effective masses by showing its impact on mobility and transfer characteristics.

scholarly journals Temperature Coefficient of Silicon-Based Carrier Selective Solar Cells

2019 ◽  
Vol 9 (3) ◽  
pp. 583-590 ◽  
Author(s):  
Nithin Chatterji ◽  
Aldrin Antony ◽  
Pradeep R. Nair
Keyword(s):  
Solar Cells ◽  
Temperature Coefficient ◽  
Silicon Based

Zero Temperature Coefficient of Frequency Surface Acoustic Wave Resonator for Narrow-Duplex-Gap Application on SiO2/Al/LiNbO3Structure

2011 ◽  
Vol 50 (7) ◽  
pp. 07HD13 ◽  
Author(s):  
Hidekazu Nakanishi ◽  
Hiroyuki Nakamura ◽  
Tetsuya Tsurunari ◽  
Joji Fujiwara ◽  
Yosuke Hamaoka ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Surface Acoustic Wave ◽  
Zero Temperature ◽  
Wave Resonator ◽  
Temperature Coefficient Of Frequency

The Improvement of Temperature Coefficient of Frequency in Thin Film Bulk Acoustic Wave Resonator using Secondary Harmonics

2002 ◽  
Vol 741 ◽  
Author(s):  
Yukio Yoshino ◽  
Masaki Takeuchi ◽  
Hajime Yamada ◽  
Yoshihiko Goto ◽  
Tadashi Nomura ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Finite Element Method Simulation ◽  
Thickness Ratio ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk ◽  
Temperature Coefficient Of Frequency

ABSTRACTWe have succeeded in making an 870MHz-range thin film bulk acoustic wave (BAW) resonator that has a small temperature coefficient of frequency (TCF) using secondary harmonics. The 870MHz-range BAW resonator has been requested to have nearly zero TCF, because it will be used in an oscillator for remote keyless entry systems. The BAW resonator has composite structure that consists of Al electrodes and ZnO/SiO2. We directed our attention to the fact that ZnO and Al have negative TCF, and SiO2 has a positive one. It is theoretically possible to make zero TCF BAW resonators by optimizing the thickness ratio of ZnO and SiO2. However, using fundamental resonance, TCF is so sensitive to the thickness ratio that it cannot be easily controlled by MEMS techniques. We founds in finite element method simulation and confirmed by experiment that the TCF of secondary harmonics has a local minimum when changing the ZnO/SiO2 thickness ratio. As the result, a nearly zero TCF resonator without strict control of ZnO/SiO2 thickness ratio has been realized by adopting Al/ZnO/SiO2/ZnO/Al/SiO2 structure and combining thermal oxidized Si and sputtered SiO2. The resonator has the TCF of -1.86ppm/degree in the range of −40 to 85 degrees centigrade.

scholarly journals Effects of compensating the temperature coefficient of frequency with the acoustic reflector layers on the overall performance of solidly mounted resonators

Ultrasonics ◽  
2017 ◽  
Vol 74 ◽  
pp. 153-160 ◽  
Author(s):  
Junaid Munir ◽  
Teona Mirea ◽  
Mario DeMiguel-Ramos ◽  
M.A. Saeed ◽  
Amiruddin Bin Shaari ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Temperature Coefficient Of Frequency ◽  
Overall Performance
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