Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Download Full-text

Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Download Full-text

Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.128.885 ◽

2008 ◽

Vol 128 (6) ◽

pp. 885-889

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

Download Full-text

Compact modeling of gate leakage phenomenon in GaN HEMTs

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241666 ◽

2020 ◽

Author(s):

Kexin Li ◽

Eiji Yagyu ◽

Hisashi Saito ◽

Koon Hoo Teo ◽

Shaloo Rakheja

Keyword(s):

Compact Modeling ◽

Gate Leakage ◽

Gan Hemts

Download Full-text

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0393 ◽

2010 ◽

Author(s):

M. Bouya ◽

D. Carisetti ◽

J.C. Clement ◽

N. Malbert ◽

N. Labat ◽

...

Keyword(s):

Failure Analysis ◽

Near Infrared ◽

High Electron Mobility Transistor ◽

Low Noise ◽

Civil Defense ◽

Base Stations ◽

Infrared Range ◽

High Electron ◽

Radar Applications ◽

Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Download Full-text