An improved way to measure thermal impedance of insulated gate bipolar transistor (IGBT) module for power electronic packaging

This paper presents thermal design optimization of an insulated gate bipolar transistor (IGBT) integrated power electronic module (IPEM). A commercially available finite element package was used to create a 3D geometric layout of the IGBT module. Thermal simulations were performed under different forced air convection conditions, and for both single and double-sided cooling, to study the effects on the hot-spots and maximum temperature rise of the module. The design optimization for the module was performed by varying parameters (choice of materials and layer thicknesses) and studying their effect on the thermal performance of the module. The results of these studies were several improved designs for the module.

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Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature

Energies ◽

10.3390/en11092371 ◽

2018 ◽

Vol 11 (9) ◽

pp. 2371

Author(s):

Bo-Ying Liu ◽

Gao-Sheng Wang ◽

Ming-Lang Tseng ◽

Kuo-Jui Wu ◽

Zhi-Gang Li

Keyword(s):

Bipolar Transistor ◽

Thermal Parameters ◽

Junction Temperature ◽

Stable Operation ◽

Switching Loss ◽

Thermal Impedance ◽

Power Module ◽

Reliable Operation ◽

Insulated Gate Bipolar Transistor ◽

Transient Thermal

In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.

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Remaining useful lifetime prediction of thermally aged power insulated gate bipolar transistor based on Gaussian process regression

Transactions of the Institute of Measurement and Control ◽

10.1177/0142331220920470 ◽

2020 ◽

Vol 42 (13) ◽

pp. 2507-2518

Author(s):

Adla Ismail ◽

Lotfi Saidi ◽

Mounir Sayadi ◽

Mohamed Benbouzid

Keyword(s):

Gaussian Process ◽

Gaussian Process Regression ◽

High Amplitude ◽

Bipolar Transistor ◽

Remaining Useful Life ◽

Power Electronic ◽

Power Electronic Converters ◽

Insulated Gate Bipolar Transistor ◽

The Time Domain ◽

Useful Lifetime

This paper proposes a new approach for power electronic converters faults prognosis under-insulated gate bipolar transistor (IGBT) failures. Power electronic converters such as inverters and rectifiers are crucial parts of most renewable energy systems. Usually, the power converters are subjected to a high failure frequency rate and lead to a power system shut down. These faults, generally, start with thermal overstress, leading to IGBT wear-out over time. In the considered application, the power electronic converters are supplied by a generator. The unbalance IGBT degradation has been artificially created through high amplitude thermal overstress utilizing a DC at the gate. The proposed prognosis approach is based on the computation of the time-domain features to extract the degradation behavior of the IGBT device. Then, the Gaussian process regression technique is applied to the remaining useful life estimation. Prognostic results in three IGBT cases illustrate the effectiveness of the proposed prognostic approach, leading to an effective prognostic procedure for IGBT faults in power electronic converters.

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