scholarly journals Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature

Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2371
Author(s):  
Bo-Ying Liu ◽  
Gao-Sheng Wang ◽  
Ming-Lang Tseng ◽  
Kuo-Jui Wu ◽  
Zhi-Gang Li
Keyword(s):  
Bipolar Transistor ◽  
Thermal Parameters ◽  
Junction Temperature ◽  
Stable Operation ◽  
Switching Loss ◽  
Thermal Impedance ◽  
Power Module ◽  
Reliable Operation ◽  
Insulated Gate Bipolar Transistor ◽  
Transient Thermal

In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.

Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

2015 ◽  
Vol 8 (6) ◽  
pp. 1009-1016 ◽  
Author(s):  
Mei‐Yu Wang ◽  
Guo‐Quan Lu ◽  
Yun‐Hui Mei ◽  
Xin Li ◽  
Lei Wang ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Thermal Impedance ◽  
Electrical Method ◽  
Insulated Gate Bipolar Transistor ◽  
Transient Thermal

scholarly journals A Fusion Algorithm for Online Reliability Evaluation of Microgrid Inverter IGBT

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1294 ◽  
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Chenyuan Wang ◽  
Xiaoxin Wu ◽  
Lie Li
Keyword(s):  
Aging Process ◽  
Short Term Memory ◽  
Coupling Model ◽  
Reliability Evaluation ◽  
Junction Temperature ◽  
Stable Operation ◽  
Practical Case ◽  
Fusion Algorithm ◽  
Insulated Gate Bipolar Transistor ◽  
Damage Degree

Due to the diversity of distributed generation sources, microgrid inverters work under complex and changeable conditions. The core device of inverters, an insulated gate bipolar transistor (IGBT), bears a large amount of thermal stress impact, so its reliability is related to the stable operation of the microgrid. The effect of the IGBT aging process cannot be considered adequately with the existing reliability evaluation methods, which have not yet reached the requirements of online evaluation. This paper proposes a fusion algorithm for online reliability evaluation of microgrid inverter IGBT, which combines condition monitoring and reliability evaluation. Firstly, based on the microgrid inverter topology and IGBT characteristics, an electrothermal coupling model is established to obtain junction temperature data. Secondly, the segmented long short-term memory (LSTM) algorithm is studied, which can accurately predict the aging process of the IGBT and judge the aging state via the limited monitoring data. Then, the parameters of the electrothermal coupling model are corrected according to the aging process. Besides, the fusion algorithm is applied to the practical case. Finally, the data comparison verifies the feasibility of the fusion algorithm, whose cumulative damage degree and estimated life error are 5.10% and 5.83%, respectively.

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000289-000296 ◽  
Author(s):  
James D. Scofield ◽  
J. Neil Merrett ◽  
James Richmond ◽  
Anant Agarwal ◽  
Scott Leslie
Keyword(s):  
Selection Process ◽  
Free Module ◽  
Junction Temperature ◽  
Thermal Impedance ◽  
Power Module ◽  
Package Design ◽  
Module Design ◽  
Reliability Characteristics ◽  
Power Modules ◽  
Environmental Requirement

A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.

High Temperature SiC Power Module Packaging

2009 ◽  
Author(s):  
Brian Rowden ◽  
Alan Mantooth ◽  
Simon Ang ◽  
Alex Lostetter ◽  
Jared Hornberger ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
High Reliability ◽  
Extreme Environments ◽  
Transient Liquid Phase ◽  
Wide Band ◽  
Junction Temperature ◽  
System Level ◽  
Thermal Impedance ◽  
Power Module

Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.

High-Temperature Transient Thermal Analysis for SiC Power Modules

2016 ◽  
Vol 858 ◽  
pp. 1078-1081 ◽  
Author(s):  
Fumiki Kato ◽  
Hiroshi Nakagawa ◽  
Hiroshi Yamaguchi ◽  
Hiroshi Sato
Keyword(s):  
Thermal Analysis ◽  
Heat Capacity ◽  
High Temperature ◽  
Thermal Resistance ◽  
Junction Temperature ◽  
Stable Operation ◽  
Transient Thermal Analysis ◽  
Die Attach ◽  
Power Modules ◽  
Transient Thermal

Transient thermal analysis is a very useful tool for thermal evaluation to realize the stable operation of SiC power modules which are operated at higher temperatures than conventional Si power modules. A transient thermal analysis system to investigate the thermal characteristics of SiC power modules at high temperature is presented. We have found that precise temperature measurement at the initial stage of the junction temperature decay curve is necessary in order to evaluate the thermal resistance and heat capacity of the die attach, since the thermal diffusivity of SiC is larger than that of Si and the temperature distribution of SiC die was considered. Using the proposed transient thermal analysis method, the thermal resistance and heat capacity of the AuGe die attach under the SiC-SBD was successfully evaluated at temperatures up to 250 °C.

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