Short Channel Effects Characterization of 3-D FinFET for High-k Gate Dielectrics

2018 International Conference on Innovations in Science, Engineering and Technology (ICISET) ◽

10.1109/iciset.2018.8745562 ◽

2018 ◽

Author(s):

Zunaid Ahmed Zaki ◽

Noshin Tanjila ◽

Jibesh K. Saha

Keyword(s):

Gate Dielectrics ◽

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects

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Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaab01 ◽

2018 ◽

Vol 33 (3) ◽

pp. 035013 ◽

Author(s):

Meng-Chen Tsai ◽

Chin-I Wang ◽

Yen-Chang Chen ◽

Yi-Ju Chen ◽

Kai-Shin Li ◽

...

Keyword(s):

Low Power ◽

Buffer Layer ◽

Power Device ◽

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects ◽

Device Applications

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Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Dielectrics

10.7567/ssdm.1997.c-9-5 ◽

1997 ◽

Author(s):

Jin-Woo Lee ◽

Nae-In Lee ◽

Chul-Hi Han

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectrics ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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3-D analytical modeling of high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects

Journal of Computational Electronics ◽

10.1007/s10825-017-1002-y ◽

2017 ◽

Vol 16 (3) ◽

pp. 631-639 ◽

Author(s):

Pritha Banerjee ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Strained Silicon ◽

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects ◽

Dual Material ◽

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Reverse short channel effects in high-k gated nMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2004.11.049 ◽

2005 ◽

Vol 45 (5-6) ◽

pp. 783-785

Author(s):

J.-P. Han ◽

S.M. Koo ◽

E.M. Vogel ◽

E.P. Gusev ◽

C. D’Emic ◽

...

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects

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Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.06.004 ◽

2015 ◽

Vol 85 ◽

pp. 357-369 ◽

Author(s):

Vadthiya Narendar ◽

R.A. Mishra

Keyword(s):

Modeling And Simulation ◽

Analytical Modeling ◽

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects ◽

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Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.200990031 ◽

2009 ◽

Vol 19 (8) ◽

pp. NA-NA ◽

Author(s):

Colin Reese ◽

Zhenan Bao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Field Effect Mobility ◽

Short Channel ◽

Detailed Characterization ◽

Crystal Field Effect ◽

Channel Effects ◽

Dependent Field

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Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacks

10.1117/12.926880 ◽

2012 ◽

Author(s):

Chandrima Mondal ◽

Abhijit Biswas

Keyword(s):

Short Channel Effects ◽

Gate Stacks ◽

Short Channel ◽

High K ◽

Channel Effects

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Effect of high k-dielectric as gate oxide on short channel effects of junction-less transistor

2013 2nd International Conference on Advances in Electrical Engineering (ICAEE) ◽

10.1109/icaee.2013.6750316 ◽

2013 ◽

Author(s):

Ayed Al Sayem ◽

Yeasir Arafat ◽

Md. Mushfiqur Rahman

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects ◽

High K Dielectric

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Simulation and optimization of lightly-doped ultra-thin Triple Metal Double Gate (TM-DG) MOSFET with high-K dielectric for diminished short channel effects

2011 2nd International Conference on Computer and Communication Technology (ICCCT-2011) ◽

10.1109/iccct.2011.6075167 ◽

2011 ◽

Author(s):

Santosh Kumar Gupta ◽

Achinta Baidya ◽

S. Baishya

Keyword(s):

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Simulation And Optimization ◽

High K ◽

Dg Mosfet ◽

Channel Effects ◽

High K Dielectric

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Short channel effects (SCEs) characterization of underlaped dual-K spacer in dual-metal gate FinFET device

2016 International Conference on Control, Computing, Communication and Materials (ICCCCM) ◽

10.1109/iccccm.2016.7918265 ◽

2016 ◽

Author(s):

Lucky Agarwal ◽

Brijesh Kumar Singh ◽

R. A. Mishra ◽

Shweta Tripathi

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

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