Short channel effects (SCEs) characterization of underlaped dual-K spacer in dual-metal gate FinFET device

Abstract This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1 − xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1 − xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1 − xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW− 1), high Iillumination/Idark (1.36 * 109) and quantum-efficiency (1.12 %). The obtained results of In1 − xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.

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Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.200990031 ◽

2009 ◽

Vol 19 (8) ◽

pp. NA-NA ◽

Cited By ~ 1

Author(s):

Colin Reese ◽

Zhenan Bao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Field Effect Mobility ◽

Short Channel ◽

Detailed Characterization ◽

Crystal Field Effect ◽

Channel Effects ◽

Dependent Field

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Short Channel Effects Characterization of 3-D FinFET for High-k Gate Dielectrics

2018 International Conference on Innovations in Science, Engineering and Technology (ICISET) ◽

10.1109/iciset.2018.8745562 ◽

2018 ◽

Author(s):

Zunaid Ahmed Zaki ◽

Noshin Tanjila ◽

Jibesh K. Saha

Keyword(s):

Gate Dielectrics ◽

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects

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Design and software characterization of finFET based full adders

International Journal of Reconfigurable and Embedded Systems (IJRES) ◽

10.11591/ijres.v8.i1.pp51-60 ◽

2019 ◽

Vol 8 (1) ◽

pp. 51

Author(s):

Raju Hajare ◽

C. Lakshminarayana

Keyword(s):

Field Effect Transistors ◽

Full Adder ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Switching Speed ◽

Chip Area ◽

Channel Effects ◽

Technology Nodes

Adder is the most important arithmetic block that are used in all processors. Most of the logical circuits till today were designed using Metal Oxide Semiconductor Field Effect Transistors (MOSFET’s). In order to reduce chip area, leakage power and to increase switching speed, MOSFET’s were continuously scaled down. Further scaling below 45nm, MOSFET’s suffers from Short Channel Effects (SCE’s) which leads to degraded performance of the device. Here the Performance of 28T and 16T MOSFET based 1-bit full adder cell is characterized and compared with FinFET based 28T and 16T 1-bit full adders at various technology nodes using HSPICE software. Results show that FinFET based full adder design gives better performance in terms of speed, power and reliability compared to MOSFET based full adder designs. Hence FinFET are promising candidates and better replacement for MOSFET.

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Design and characterization of a 10 nm finfet

Malaysian Journal of Fundamental and Applied Sciences ◽

10.11113/mjfas.v15n4.1234 ◽

2019 ◽

Vol 15 (4) ◽

pp. 609-612

Author(s):

Kim Ho Yeap ◽

Jun Yi Lee ◽

Wei Long Yeo ◽

Humaira Nisar ◽

Siu Hong Loh

Keyword(s):

Leakage Current ◽

Short Channel Effects ◽

Short Channel ◽

Drive Current ◽

Design Specifications ◽

Transfer Characteristics ◽

Channel Effects ◽

Output Characteristics

This paper presents the design, characterization, and analysis of a 10 nm silicon negative channel FinFET. To validate the design, we have simulated the output characteristics and transfer characteristics of the transistor. Both of which comply with the standard characteristics of an operational MOSFET. Owing to its efficacy in suppressing short channel effects, the leakage current of the tri-gate transistor is found to be low; whereas, the drive current is sufficiently high. We have also presented the design specifications of the transistor.

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Characterization of Sub 130 Nanometer Gate Length SOI MOSFET Devices Exhibiting Short Channel Effects

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2003p0478 ◽

2003 ◽

Author(s):

Terence Kane ◽

Michael P. Tenney ◽

John Bruley

Keyword(s):

Electrical Characterization ◽

Short Channel Effects ◽

Line Edge Roughness ◽

Short Channel ◽

Critical Dimensions ◽

Technology Roadmap ◽

Transmission Electron ◽

Edge Roughness ◽

Channel Effects

Abstract As MOSFET device gate lengths shrink below the 130 nanometer node, the effects of short channel effects (SCE) and gate line edge roughness (LER) have an increasingly more pronounced affect on device performance [1-8, 10]. The 2001 International Technology Roadmap for Semiconductors (ITRS) predicts increasingly tighter critical dimensions (CD) control limits on LER from 2.7 nm in 2004 to 1.3 nm in 2010 [9,11]. As gate lengths shrink, resist etch processes emerge as the most significant contributor to LER [1-8, 11]. In addition, another contributing factor to SCE is junction implant defects. Examples of gate LER effects and junction defects in 130 nanometer node SOI SRAM MOSFET devices identified by sub-micron electrical characterization with analysis by high resolution transmission electron microscopy (TEM) are discussed.

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