Exploration of Clipped Barrier Silicon Carbide Schottky Diode

This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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Reliability Study of Silicon Carbide Schottky Diode with Fast Electron Irradiation

2018 7th International Conference on Computer and Communication Engineering (ICCCE) ◽

10.1109/iccce.2018.8539343 ◽

2018 ◽

Author(s):

M. Azim Khairi ◽

Rosminazuin Ab. Rahim ◽

Norazlina Saidin ◽

N. F. Hasbullah ◽

Yusof Abdullah

Keyword(s):

Silicon Carbide ◽

Schottky Diode ◽

Electron Irradiation ◽

Fast Electron ◽

Reliability Study

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Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

Scientific Reports ◽

10.1038/s41598-017-13715-3 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 12

Author(s):

Linyue Liu ◽

Ao Liu ◽

Song Bai ◽

Ling Lv ◽

Peng Jin ◽

...

Keyword(s):

Silicon Carbide ◽

Schottky Diode ◽

Radiation Resistance ◽

Neutron Detection ◽

Fusion Neutron

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Extreme environment temperature sensor based on silicon carbide Schottky Diode

2009 International Semiconductor Conference ◽

10.1109/smicnd.2009.5336658 ◽

2009 ◽

Cited By ~ 11

Author(s):

Ioana Josan ◽

C. Boianceanu ◽

G. Brezeanu ◽

V. Obreja ◽

Marioara Avram ◽

...

Keyword(s):

Silicon Carbide ◽

Schottky Diode ◽

Temperature Sensor ◽

Extreme Environment ◽

Environment Temperature

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Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.711.174 ◽

2012 ◽

Vol 711 ◽

pp. 174-178 ◽

Cited By ~ 4

Author(s):

Muhammad Yousuf Zaman ◽

Denis Perrone ◽

Sergio Ferrero ◽

Luciano Scaltrito ◽

Marco Naretto

Keyword(s):

Silicon Carbide ◽

Schottky Diode ◽

Schottky Diodes ◽

Thermionic Emission ◽

Effective Area ◽

Large Area ◽

Current Voltage ◽

Different Temperatures ◽

Barrier Inhomogeneities ◽

Electrical Characterizations

Various attempts have been made to evaluate the correct value (A*=146 A/cm2.K2) ofRichardson's constant. In 2005 S. Ferrero et al. published their research in which they performedan analysis of electrical characterizations of twenty Ti/4H-SiC(titanium on silicon carbide) Schottkydiodes with the help of thermionic emission theory and evaluated the value of Richardson's constantto be 17±8 A/cm2.K2; which is very low as compared to the theoretical value of 146 A/cm2.K2.Wehave tried in this paper to evaluate the Richardson's constant's value by nearly same experimental tech-niques followed by S. Ferrero et al. and additionally, have applied Tung's theoretical approach whichdeals with the incorrect value of A* in the perspective of Schottky barrier inhomogeneities caused bythe presence of nanometer size low barrier patches present in the uniform high barrier of the Schottkydiode.We have fabricated two Ti/4H-SiC (titanium on silicon carbide) Schottky diodes with differentareas and oneMo/4H-SiC (molybdenumon silicon carbide) Schottky diode. In this paper we have pre-sented a comparative analysis of forward current-voltage characteristics of all three Schottky diodes.In all three cases we were successful in the evaluation of nearly correct value of Richardson's constant.This work emphasizes the effects of differentmetal-SiC combinations and laboratory environments onthe evaluation of Richardson's constant and the effective area involved in the current transport. As pre-dicted by Tung's model the effective area is seen to be substantially different from the geometric areaof the Schottky diode. Evaluated values of A*, with an error of ±2, come out to be 145.39, 148.33and 148.33 A/cm2.K2for Ti/4H-SiC(large area), Mo/4H-SiC and Ti/4H-SiC(small area) Schottkydiodes, respectively.

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SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1014.62 ◽

2020 ◽

Vol 1014 ◽

pp. 62-67

Author(s):

Xi Wang ◽

Hong Bin Pu ◽

Ji Chao Hu ◽

Bing Liu

Keyword(s):

Silicon Carbide ◽

Electric Field ◽

Numerical Simulations ◽

Schottky Diode ◽

Doping Concentration ◽

Fabrication Process ◽

Drift Region ◽

Reverse Blocking ◽

Static Performance ◽

Peak Electric Field

A novel silicon carbide (SiC) trenched schottky diode with step-shaped junction barrier is proposed for superior static performance and large design window. In the proposed diode, to improve tradeoff between specific on-resistance and surface peak electric field, the shape of the trenched-junction is modified to stair-step, without extra fabrication process. To investigate the performances of the SiC step-shaped trenched junction barrier schottky (SSTJBS) diode, numerical simulations are carried out through Silvaco TCAD. The results indicate that the proposed diode can accommodate highly doped drift region with no degradation of its reverse blocking characteristic. In comparison with the conventional SiC trenched junction barrier schottky (TJBS) diode, the proposed SiC SSTJBS diode shows a larger design window of drift region doping concentration from 7.9×1015cm-3 to 9.5×1015cm-3. In the design window, the specific on-resistance and surface peak electric field can be reduced by 12.9% and 11%, respectively.

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