Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.
Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films
