Innovative use of TCAD Process Simulation for Device Failure Analysis

2021 ◽  
Author(s):  
Shang Yi Lim ◽  
Joydeep Ghosh ◽  
Aaron Thean
Keyword(s):  
Failure Analysis ◽  
Process Simulation ◽  
Device Failure

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 621-624 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Nathanael Cueva ◽  
Tony Witt ◽  
Richard L. Woodin
Keyword(s):  
Silicon Carbide ◽  
Failure Analysis ◽  
Ohmic Contact ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Device Failure ◽  
Electrical Failure ◽  
The Impact ◽  
Surge Current

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

scholarly journals Device failure analysis by scanning electron microscopy

1969 ◽  
Vol 8 (1) ◽  
pp. 33-53 ◽  
Author(s):  
P.R. Thornton ◽  
I.G. Davies ◽  
D.A. Shaw ◽  
D.V. Sulway ◽  
R.C. Wayte
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Failure Analysis ◽  
Device Failure ◽  
Scanning Electron

Advanced CMOS Device Fault Isolation Using Frequency Mapping on Passive Structures

2013 ◽  
Author(s):  
S.H. Goh ◽  
B.L. Yeoh ◽  
G.F. You ◽  
W.H. Hung ◽  
Jeffrey Lam ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Isolation ◽  
Device Failure ◽  
Functional Failure ◽  
Technology Node ◽  
Defect Localization ◽  
Emission Microscopy ◽  
Scan Chains

Abstract Backside frequency mapping on modulating active in transistors is well established for defect localization on broken scan chains. Recent experiments have proven the existence of frequency signals from passive structures modulations. In this paper, we demonstrate the effectiveness of this technique on a 65 nm technology node device failure. A resistive leaky path leading to a functional failure which, otherwise cannot be isolated using dynamic emission microscopy, is localized in this work to guide follow on failure analysis.

Advanced Electrical Characterization of 90 nm Soft Bit Failure by Nano Probing Technique

2005 ◽  
Author(s):  
Christelle Giret ◽  
Damien Faure
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Electrical Measurements ◽  
Device Failure ◽  
Sram Cell ◽  
Visual Defects ◽  
Difficult Challenge ◽  
Type Of Failure

Abstract The Soft Bit failure (Single Bit Failure sensitive to voltage) of a 90nm SRAM cell presented a difficult challenge for the Failure Analysis (FA) group. Physical analysis of these Soft SRAM failures did not show any visual defects; therefore the FA required an accurate electrical characterization. The transistor characteristics of the failing SRAM transistors are needed in order to speculate on the possible failure mechanism. The Nano-Probing technique performed at Nice Device Failure Analysis of Laboratory (NDAL) allowed us to identify anomalies of I/V characteristics like Vt imbalance, low Gain, asymmetrical Vt, ID (Drive current) and Ron. Case studies of an asymmetry phenomenon reported here lead to a correlation between the failure mode and the electrical measurements. This paper demonstrates a suitable electrical methodology and characterization by Nano-Probing in order to successfully manage a FA approach on this type of failure.

Specific site device failure analysis: A case history

1992 ◽  
Vol 50 (2) ◽  
pp. 1390-1391
Author(s):  
Ron Anderson ◽  
Joseph Wall ◽  
Stanley Klepeis
Keyword(s):  
Failure Analysis ◽  
Spatial Resolution ◽  
Case History ◽  
Integrated Circuit ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Device Failure ◽  
History Of ◽  
Analysis Application ◽  
Electrical Diagnostics

Failure analysis application of analytical TEM analysis was handicapped in the past by the difficulty associated with specimen preparation of specific devices in complicated integrated circuit arrays. We have published several papers detailing methods for preparing TEM specimens with high specimen preparation spatial resolution in periods of about two to four hours. This paper offers a case history of a TEM failure analysis that combines high spatial resolution specimen preparation and the utilization of chemical junction delineation techniques.The device failure came to light in a chip tester prior to shipment. Tester electrical diagnostics identified a particular cell within a large array as defective. The fail's electrical signature further narrowed-down the potential candidates to a small number of devices within the cell. The chip was examined in transmission in an IR microscope. Anomalous IR contrast was observed in the emitter of one bipolar device in the suspect region (Fig. 1). A series of conventional light-optical photographs, with increasing magnification, were taken to define the failure location. Using the light-optical photos as a guide, the failed emitter was bracketed with laser craters. The specimen preparation polishing operation used the laser craters to achieve a plane-of-polish through the suspect emitter.

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