Advanced CMOS Device Fault Isolation Using Frequency Mapping on Passive Structures

2013 ◽  
Author(s):  
S.H. Goh ◽  
B.L. Yeoh ◽  
G.F. You ◽  
W.H. Hung ◽  
Jeffrey Lam ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Isolation ◽  
Device Failure ◽  
Functional Failure ◽  
Technology Node ◽  
Defect Localization ◽  
Emission Microscopy ◽  
Scan Chains

Abstract Backside frequency mapping on modulating active in transistors is well established for defect localization on broken scan chains. Recent experiments have proven the existence of frequency signals from passive structures modulations. In this paper, we demonstrate the effectiveness of this technique on a 65 nm technology node device failure. A resistive leaky path leading to a functional failure which, otherwise cannot be isolated using dynamic emission microscopy, is localized in this work to guide follow on failure analysis.

Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

2000 ◽  
Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Wafer Fabrication ◽  
X Ray ◽  
Particle Contamination ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

Pseudo-Dynamic Fault Isolation Technique Using Backside Emission Microscopy – Case Study, Where All Other Methods Fail

2002 ◽  
Author(s):  
Yoav Weizman ◽  
Ezra Baruch ◽  
Michael Zimin
Keyword(s):  
Failure Analysis ◽  
Process Variations ◽  
Fault Isolation ◽  
Operating Conditions ◽  
Detection Sensitivity ◽  
Isolation Technique ◽  
Root Cause ◽  
Emission Microscopy ◽  
Failure Location ◽  
Noisy Background

Abstract Emission microscopy is usually implemented for static operating conditions of the DUT. Under dynamic operation it is nearly impossible to identify a failure out of the noisy background. In this paper we describe a simple technique that could be used in cases where the temporal location of the failure was identified however the physical location is not known or partially known. The technique was originally introduced to investigate IDDq failures (1) in order to investigate timing related issues with automated tester equipment. Ishii et al (2) improved the technique and coupled an emission microscope to the tester for functional failure analysis of DRAMs and logic LSIs. Using consecutive step-by-step tester halting coupled to a sensitive emission microscope, one is able detect the failure while it occurs. We will describe a failure analysis case in which marginal design and process variations combined to create contention at certain logic states. Since the failure occurred arbitrarily, the use of the traditional LVP, that requires a stable failure, misled the analysts. Furthermore, even if we used advanced tools as PICA, which was actually designed to locate such failures, we believe that there would have been little chance of observing the failure since the failure appeared only below 1.3V where the PICA tool has diminished photon detection sensitivity. For this case the step-by-step halting technique helped to isolate the failure location after a short round of measurements. With the use of logic simulations, the root cause of the failure was clear once the failing gate was known.

Application of Focused Ion Beam System as A Defect Localization and Root Cause Analysis Tool

2001 ◽  
Author(s):  
C.C. Ooi ◽  
K.H. Siek ◽  
K.S. Sim
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Analysis Tool ◽  
Root Cause ◽  
Beam System ◽  
Defect Localization ◽  
Challenging Environment ◽  
Microprocessor Technology

Abstract Focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects post electrical fault isolation. In this highly competitive and challenging environment prevalent today, failure analysis throughput time is of utmost important. Therefore quick, efficient and reliable physical failure analysis technique is needed to avoid potential issues from becoming bigger. This paper will discuss the applications of FIB as a defect localization and root cause determination tool through the passive charge contrast technique and pattern FIB analysis.

Analog and Mixed Signal Diagnosis Flow Using Fault Isolation Techniques and Simulation

2020 ◽  
Author(s):  
Tommaso Melis ◽  
Emmanuel Simeu ◽  
Etienne Auvray
Keyword(s):  
Failure Analysis ◽  
Fault Simulation ◽  
Fault Isolation ◽  
Physical Analysis ◽  
Actual Process ◽  
Electrical Test ◽  
Simulation Tools ◽  
Isolation Techniques ◽  
Process Node ◽  
Emission Microscopy

Abstract Getting accurate fault isolation during failure analysis is mandatory for success of Physical Failure Analysis (PFA) in critical applications. Unfortunately, achieving such accuracy is becoming more and more difficult with today’s diagnosis tools and actual process node such as BCD9 and FinFET 7 nm, compromising the success of subsequent PFA done on defective SoCs. Electrical simulation is used to reproduce emission microscopy, in our previous work and, in this paper, we demonstrate the possibility of using fault simulation tools with the results of electrical test and fault isolation techniques to provide diagnosis with accurate candidates for physical analysis. The experimental results of the presented flow, from several cases of application, show the validity of this approach.

Improving Fault Isolation Using Iterative Diagnosis

2008 ◽  
Author(s):  
Kevin Gearhardt ◽  
Chris Schuermyer ◽  
Ruifeng Guo
Keyword(s):  
Fault Diagnosis ◽  
Failure Analysis ◽  
Test Generation ◽  
Pattern Generation ◽  
Fault Isolation ◽  
Isolation Techniques ◽  
Defect Localization

Abstract This paper presents an iterative diagnosis test generation framework to improve logic fault diagnosis resolution. Industrial examples are presented in this paper on how additional targeted pattern generation can be used to improve defect localization before physical failure analysis of a die. This enables failure analysts to be more effective by reducing the dependence on the more expensive physical fault isolation techniques.

Backside Deprocessing of CMOS SOI Devices for Physical Defect and Failure Analysis

2003 ◽  
Author(s):  
Seth J. Prejean ◽  
Joseph Shannon
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Isolation ◽  
Oxide Semiconductor ◽  
Easy Access ◽  
Induced Voltage ◽  
Emission Analysis ◽  
Defect Localization ◽  
Soi Devices

Abstract This paper describes improvements in backside deprocessing of CMOS (Complimentary Metal Oxide Semiconductor) SOI (Silicon On Insulator) integrated circuits. The deprocessing techniques described here have been adapted from a previous research publication on backside deprocessing of bulk CMOS integrated circuits [1]. The focus of these improvements was to provide a repeatable and reliable methodology of deprocessing CMOS devices from the backside. We describe a repeatable and efficient technique to deprocess flip chip packaged devices and unpackaged die from the backside. While this technique has been demonstrated on SOI and bulk devices, this paper will focus on the latest SOI technology. The technique is useful for quick and easy access to the transistor level while preserving the metal interconnects for further analysis. It is also useful for deprocessing already thinned or polished die without removing them from the package. Removing a thin die from a package is very difficult and could potentially damage the device. This is especially beneficial when performing physical failure analysis of samples that have been back thinned for the purpose of fault isolation and defect localization techniques such as: LIVA (Laser Induced Voltage Alteration), TIVA (Thermally Induce Voltage Alteration), SDL [2] (Soft Defect Localization), and TRE (Time Resolved Emission) analysis. An important fundamental advantage of deprocessing SOI devices is that the BOX (Buried Oxide) layer acts as a chemical etch stop when etching the backside or bulk silicon. This leaves the transistor active silicon intact for analysis. Further delayering allows for the inspection of the active silicon, gate oxide, silicide, spacers, and poly. After deprocessing the transistor level, the metal layers are still intact and, in most cases, still electrically connected to the outside world. This can provide additional failure analysis opportunities.

Zynq SOC Low-Voltage and Temperature-Dependent L2 Cache Failure Diagnosis and Defect Localization Case Study

2017 ◽  
Author(s):  
Haonan Bai ◽  
Lan Yin Lee ◽  
Yang Jing ◽  
Peter Floyd Salinas ◽  
Kok Keng Chua
Keyword(s):  
Failure Analysis ◽  
Low Voltage ◽  
Data Access ◽  
Pattern Generation ◽  
Fault Isolation ◽  
Programmable Logic ◽  
Single Chip ◽  
Tem Analysis ◽  
Test Methodology ◽  
Defect Localization

Abstract Failure analysis and defect localization on 28nm All Programmable Zynq System-on-Chip (SoC) device is extremely challenging. While conventional FPGA, which only consists of the Programmable Logic, has greater ease and flexibility in pattern generation during fault isolation, the all programmable SoC device integrates a dual ARM Cortex-A9 cores with Programmable Logic (PL) in a single chip. The cache data access in-between processor and PL is more complex and test methodology has lesser degree of control on cache data flow and stack sequence. This paper introduced an advanced fault isolation test methodology combining Software Development Kit (SDK) with scan based diagnostic test for cache failures. It successfully pinpoint to failure locations with physical defects found. As conventional physical failure analysis approaches using SEM based passive voltage contrast could not observe any abnormalities, current imaging and nano-probing measurement using AFP played critical roles in detecting nano-ampere leakages prior subsequent TEM analysis. The findings were then feedback to the foundry for process improvement. Furthermore, a new screening methodology is innovated where an extreme low-voltage test at high temperature in Automatic Test to detect and eliminate the process marginal leakage failure.

MEMS Failure Analysis In Wafer Fabrication

2016 ◽  
Author(s):  
Hui Peng Ng ◽  
Angela Teo ◽  
Ghim Boon Ang ◽  
Alfred Quah ◽  
N. Dayanand ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Data Interpretation ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Auger Analysis ◽  
Root Cause ◽  
Defect Site ◽  
Defect Localization ◽  
Cmos Chip

Abstract This paper discussed on how the importance of failure analysis to identify the root cause and mechanism that resulted in the MEMS failure. The defect seen was either directly on the MEMS caps or the CMOS integrated chip in wafer fabrication. Two case studies were highlighted in the discussion to demonstrate how the FA procedures that the analysts had adopted in order to narrow down to the defect site successfully on MEMS cap as well as on CMOS chip on MEMS package units. Besides the use of electrical fault isolation tool/technique such as TIVA for defect localization, a new physical deprocessing approach based on the cutting method was performed on the MEMS package unit in order to separate the MEMS from the Si Cap. This approach would definitely help to prevent the introduction of particles and artifacts during the PFA that could mislead the FA analyst into wrong data interpretation. Other FA tool such as SEM inspection to observe the physical defect and Auger analysis to identify the elements in the defect during the course of analysis were also documented in this paper.

Thermal Failure Analysis of Functional Failures by IR Lock-in Thermal Emission

2019 ◽  
Author(s):  
Paul Hubert P. Llamera ◽  
Camille Joyce G. Garcia-Awitan
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Near Infrared ◽  
Thermal Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
Distinct Advantage ◽  
Infra Red ◽  
Emission Microscopy ◽  
Lock In

Abstract Lock-in thermography (LIT), known as a powerful nondestructive fault localization technique, can also be used for microscopic failure analysis of integrated circuits (ICs). The dynamic characteristic of LIT in terms of measurement, imaging and sensitivity, is a distinct advantage compared to other thermal fault localization methods as well as other fault isolation techniques like emission microscopy. In this study, LIT is utilized for failure localization of units exhibiting functional failure. Results showed that LIT was able to point defects with emissions in the mid-wave infra-red (MWIR) range that Photo Emission Microscopy (PEM) with near infrared (NIR) to short- wave infra-red (SWIR) detection wavelength sensitivity cannot to detect.

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