A 1.8V Low-Jitter CMOS Ring Oscillator with Supply Regulation

Author(s):  
T. Pialis ◽  
E.W. Hu ◽  
Khoman Phang
Keyword(s):  
Author(s):  
Alessio Santiccioli

AbstractThe quest for ubiquitous wireless connectivity, drives an increasing demand for compact and efficient means of frequency generation. Conventional synthesizer options, however, generally trade one requirement for the other, achieving either excellent levels of efficiency by leveraging LC-oscillators, or a very compact area by relying on ring-oscillators. This chapter describes a recently introduced class of inductorless frequency synthesizers, based on the periodic realignment of a ring-oscillator, that have the potential to break this tradeoff. After analyzing their jitter-power product, the conditions that ensure optimum performance are derived and a novel digital-to-time converter range-reduction technique is introduced, to enable low-jitter and low-power fractional-N frequency synthesis. A prototype, which implements the proposed design guidelines and techniques, has been fabricated in 65 nm CMOS. It occupies a core area of 0:0275 mm$$^{2}$$ 2 and covers the 1:6-to-3:0 GHz range, achieving an absolute rms jitter (integrated from 30 kHz-to-30 MHz) of 397 fs at 2:5 mW power. With a corresponding jitter-power figure-of-merit of −244 dB in the fractional-N mode, the prototype outperforms prior state-of-the-art inductorless frequency synthesizers.


Author(s):  
SungJin Kim ◽  
Dong-Gyu Kim ◽  
Chanho Kim ◽  
DongSoo Lee ◽  
YoungGun Pu ◽  
...  

This paper presents a 612–1152 MHz Injection Locked Frequency Multiplier (ILFM). The proposed ILFM is only used for sending an input signal to the receiver in the I/Q mismatch calibration mode. Using the Phase-Locked Loop (PLL) to calibrate the receiver places a burden on this system due to the extra area required and power consumption. Instead of the PLL, to satisfy high frequency, low jitter, and low area, a Ring Oscillator is proposed. The free-running frequency of the ILFM is automatically digitally calibrated to reflect the frequency of the injected signal from the harmonics of the reference clock. To control the frequency of the ILFM, the load current is digitally tuned with 6-bit digital control signal. The proposed ILFM locks to the target frequency using a digitally controlled Frequency Locked Loop (FLL). This chip is fabricated using 1-poly 6-metal 0.18 µm CMOS and achieve the wide tuning range of 612–1152 MHz. The power consumption is 0.95 mW from a supply voltage of 1.8 V. The measured phase noise of the ILFM is −108 dBc/Hz at a 1 MHz offset.


Author(s):  
Mike Bruce ◽  
Rama R. Goruganthu ◽  
Shawn McBride ◽  
David Bethke ◽  
J.M. Chin

Abstract For time resolved hot carrier emission from the backside, an alternate approach is demonstrated termed single point PICA. The single point approach records time resolved emission from an individual transistor using time-correlated-single-photon counting and an avalanche photo-diode. The avalanche photo-diode has a much higher quantum efficiency than micro-channel plate photo-multiplier tube based imaging cameras typically used in earlier approaches. The basic system is described and demonstrated from the backside on a ring oscillator circuit.


2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.


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