Application of Novel Low Current OBIRCH Amplifier and Nanoprobing to Identify Subtle Leakages in Advanced Node Technologies

2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh
Keyword(s):  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Ring Oscillator ◽  
High Signal ◽  
The Novel ◽  
Resistance Change ◽  
Three Samples ◽  
Relative Threshold ◽  
First Time

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.

scholarly journals The CARMENES search for exoplanets around M dwarfs

2020 ◽  
Vol 642 ◽  
pp. A227 ◽  
Author(s):  
C. Abia ◽  
H. M. Tabernero ◽  
S. A. Korotin ◽  
D. Montes ◽  
E. Marfil ◽  
...  
Keyword(s):  
Near Infrared ◽  
Signal To Noise Ratio ◽  
Heavy Elements ◽  
High Signal ◽  
M Dwarfs ◽  
Chemical Enrichment ◽  
Near Infrared Spectra ◽  
Theoretical Predictions ◽  
History Of ◽  
First Time

Due to their ubiquity and very long main-sequence lifetimes, abundance determinations in M dwarfs provide a powerful and alternative tool to GK dwarfs to study the formation and chemical enrichment history of our Galaxy. In this study, abundances of the neutron-capture elements Rb, Sr, and Zr are derived, for the first time, in a sample of nearby M dwarfs. We focus on stars in the metallicity range − 0.5 ≲ [Fe/H] ≲ +0.3, an interval poorly explored for Rb abundances in previous analyses. To do this we use high-resolution, high-signal-to-noise-ratio, optical and near-infrared spectra of 57 M dwarfs observed with CARMENES. The resulting [Sr/Fe] and [Zr/Fe] ratios for most M dwarfs are almost constant at about the solar value, and are identical to those found in GK dwarfs of the same metallicity. However, for Rb we find systematic underabundances ([Rb/Fe] < 0.0) by a factor two on average. Furthermore, a tendency is found for Rb – but not for other heavy elements (Sr, Zr) – to increase with increasing metallicity such that [Rb/Fe] ≳ 0.0 is attained at metallicities higher than solar. These are surprising results, never seen for any other heavy element, and are difficult to understand within the formulation of the s- and r-processes, both contributing sources to the Galactic Rb abundance. We discuss the reliability of these findings for Rb in terms of non-LTE (local thermodynamic equilibrium) effects, stellar activity, or an anomalous Rb abundance in the Solar System, but no explanation is found. We then interpret the full observed [Rb/Fe] versus [Fe/H] trend within the framework of theoretical predictions from state-of-the-art chemical evolution models for heavy elements, but a simple interpretation is not found either. In particular, the possible secondary behaviour of the [Rb/Fe] ratio at super-solar metallicities would require a much larger production of Rb than currently predicted in AGB stars through the s-process without overproducing Sr and Zr.

scholarly journals Nonthrombogenic, stretchable, active multielectrode array for electroanatomical mapping

2018 ◽  
Vol 4 (10) ◽  
pp. eaau2426 ◽  
Author(s):  
Wonryung Lee ◽  
Shingo Kobayashi ◽  
Masase Nagase ◽  
Yasutoshi Jimbo ◽  
Itsuro Saito ◽  
...  
Keyword(s):  
Blood Compatibility ◽  
Signal To Noise Ratio ◽  
High Gain ◽  
High Signal ◽  
Multielectrode Arrays ◽  
The Novel ◽  
Plastic Substrates ◽  
Ecg Signals ◽  
Electrophysiological Signals ◽  
Surgical Bleeding

High-precision monitoring of electrophysiological signals with high spatial and temporal resolutions is one of the most important subjects for elucidating physiology functions. Recently, ultraflexible multielectrode arrays (MEAs) have been fabricated to establish conformal contacts with the surface of organs and to measure propagation of electrophysiological signals with high spatial-temporal resolution; however, plastic substrates have high Young’s modulus, causing difficulties in creating appropriate stretchability and blood compatibility for applying them on the dynamically moving and surgical bleeding surface of the heart. Here, we have successfully fabricated an active MEA that simultaneously achieves nonthrombogenicity, stretchability, and stability, which allows long-term electrocardiographic (ECG) monitoring of the dynamically moving hearts of rats even with capillary bleeding. Because of the active data readout, the measured ECG signals exhibit a high signal-to-noise ratio of 52 dB. The novel stretchable MEA is carefully designed using state-of-the-art engineering techniques by combining extraordinarily high gain organic electrochemical transistors processed on microgrid substrates and a coating of poly(3-methoxypropyl acrylate), which exhibits significant antithrombotic properties while maintaining excellent ionic conductivity.

The Effectiveness of OBIRCH Based Fault Isolation for Sub-90nm CMOS Technologies

2005 ◽  
Author(s):  
M. De la Bardonnie ◽  
L.F.Tz. Kwakman ◽  
K. Ly ◽  
R. Ross ◽  
F. Lorut ◽  
...  
Keyword(s):  
Signal To Noise Ratio ◽  
Pulsed Laser ◽  
Pulse Frequency ◽  
Fault Isolation ◽  
Resistance Change ◽  
Frequency Scan ◽  
Scan Speed ◽  
Set Up ◽  
Lock In ◽  
Higher Sensitivity

Abstract Even though failure analysis performed with a latest generation Phemos 2000 Optical Beam Induced Resistance Change (OBIRCH) tool has given excellent results for 120nm and 90nm technology developments, the limitations of tool and technique become apparent when used for the 65nm technology node and beyond. This article discusses the use of a pulsed laser in combination with a lock-in amplifier for OBIRCH-based fault isolation in latest generation CMOS devices. Using such set-up with appropriate settings for laser pulse frequency, scan speed, and phase shift off-set, a ten-fold signal-to-noise ratio gain is achieved. This improved S/N ratio allows detecting faulty circuitry with higher sensitivity and isolating faults that cannot be detected with the traditional OBIRCH set-up. Various case studies on latest technology devices are presented to illustrate the interest of adding the lock-in capability to the standard OBIRCH tool.

scholarly journals Improving the usability of piezoresistive bond lines in wood by using impedance measurements

2021 ◽  
Author(s):  
Jesco Schäfer ◽  
Christopher Jager ◽  
Ulrich Schwarz ◽  
Christoph Winkler
Keyword(s):  
Frequency Band ◽  
Direct Current ◽  
Signal To Noise Ratio ◽  
Adhesive Bond ◽  
Future Application ◽  
High Signal ◽  
Measured Signal ◽  
Resistance Change ◽  
Specific Frequency ◽  
Low Sensitivity

AbstractVarious studies on wood adhesives filled with conductive fillers for future application to structural monitoring showed a piezoresistive (resistance change with strain) response of the adhesive bond lines that is measurable under direct current. The results also showed a relatively high signal noise with low sensitivity. Using impedance spectroscopy as a measurement technique, the improvements in frequency-dependent piezoresistivity over DC (Direct Current) resistography of multifunctional bonded wood were studied. Beech specimens were bonded by one-component polyurethane prepolymer (1C-PUR) filled with carbon black and tested under shear load. The quality of the piezoresistive properties was described by calculating the signal-to-noise ratio (SNR) of the measured signal. A setup-specific frequency band with optimized SNR between 100 kHz and 1 MHz could be derived from the measurements. Several frequencies showed a signal with higher quality resulting in a higher SNR. Regardless of the variations in impedance spectra for all specimens, this frequency band provided several frequencies with improved signal quality. These frequencies give a more reliable signal with lower noise compared to the signal from DC resistography.

scholarly journals Physical conditions in the NGC 6334 molecular cloud derived from non-LTE NH3(J,K)=(1,1) transitions

2002 ◽  
Vol 206 ◽  
pp. 240-243
Author(s):  
Anderson Caproni ◽  
Zulema Abraham ◽  
José W. S. Vilas-Boas
Keyword(s):  
Star Formation ◽  
Molecular Cloud ◽  
Signal To Noise Ratio ◽  
High Signal ◽  
Physical Parameters ◽  
Signal To Noise ◽  
Line Shapes ◽  
Physical Conditions ◽  
Ngc 6334 ◽  
First Time

The high signal-to-noise ratio of the NH3(J,K) = (1,1) spectra from NGC 6334 have allowed at a first time a detailed study of departures from LTE conditions in this molecular cloud. Differences in the line shapes have shown that the surveyed region is composed of at least three overlapped sources in different stages of star formation. Comparison between physical parameters of NGC 6334 derived from LTE and non-LTE conditions are presented and discussed here.

A compact guided-wave EMAT with pulsed electromagnet for ferromagnetic tube inspection

2020 ◽  
Vol 64 (1-4) ◽  
pp. 951-958
Author(s):  
Tianhao Liu ◽  
Yu Jin ◽  
Cuixiang Pei ◽  
Jie Han ◽  
Zhenmao Chen
Keyword(s):  
Power Plants ◽  
Signal To Noise Ratio ◽  
Small Diameter ◽  
Performance Testing ◽  
Guided Wave ◽  
High Signal ◽  
Receiver Coil ◽  
Signal To Noise ◽  
Corrosion Defects

Small-diameter tubes that are widely used in petroleum industries and power plants experience corrosion during long-term services. In this paper, a compact inserted guided-wave EMAT with a pulsed electromagnet is proposed for small-diameter tube inspection. The proposed transducer is noncontact, compact with high signal-to-noise ratio and unattractive to ferromagnetic tubes. The proposed EMAT is designed with coils-only configuration, which consists of a pulsed electromagnet and a meander pulser/receiver coil. Both the numerical simulation and experimental results validate its feasibility on generating and receiving L(0,2) mode guided wave. The parameters for driving the proposed EMAT are optimized by performance testing. Finally, feasibility on quantification evaluation for corrosion defects was verified by experiments.

Buried Narratives: Exhuming the Mother's Story in Oliver Twist

2018 ◽  
Vol 8 (3) ◽  
pp. 247-266
Author(s):  
Michelle L. Wilson
Keyword(s):  
Social Change ◽  
Maternal Inheritance ◽  
The Novel ◽  
Poor Law ◽  
The Family ◽  
The Law ◽  
First Time ◽  
Critical Consideration

Initially, Oliver Twist (1839) might seem representative of the archetypal male social plot, following an orphan and finding him a place by discovering the father and settling the boy within his inheritance. But Agnes Fleming haunts this narrative, undoing its neat, linear transmission. This reconsideration of maternal inheritance and plot in the novel occurs against the backdrop of legal and social change. I extend the critical consideration of the novel's relationship to the New Poor Law by thinking about its reflection on the bastardy clauses. And here, of course, is where the mother enters. Under the bastardy clauses, the responsibility for economic maintenance of bastard children was, for the first time, legally assigned to the mother, relieving the father of any and all obligation. Oliver Twist manages to critique the bastardy clauses for their release of the father, while simultaneously embracing the placement of the mother at the head of the family line. Both Oliver and the novel thus suggest that it is the mother's story that matters, her name through which we find our own. And by containing both plots – that of the father and the mother – Oliver Twist reveals the violence implicit in traditional modes of inheritance in the novel and under the law.

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

2008 ◽  
Author(s):  
Chi-Lin Huang ◽  
Yu Hsiang Shu
Keyword(s):  
Semiconductor Device ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cross Sectional ◽  
Isolation Technique ◽  
Isolation Techniques ◽  
Atomic Force ◽  
Analysis Experiment ◽  
Failure Point ◽  
Leakage Failure

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.

Fault Isolation of High Resistance Defects Using Comparative Magnetic Field Imaging

2003 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Anders Gilbertson ◽  
L.A. Knauss ◽  
Zhiyong Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Resistance ◽  
Integrated Circuit ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Main Stream ◽  
Layer By Layer ◽  
Impedance Change ◽  
Resistance Change ◽  
Require Time

Abstract As integrated circuit packages become more complicated, the localization of defects becomes correspondingly more difficult. One particularly difficult class of defects to localize is high resistance (HR) defects. These defects include cracked traces, delaminated vias, C4 non-wet defects, PTH cracks, and any other package or interconnect structure that results in a signal line resistance change that exceeds the specification of the device. These defects can result in devices that do not run at full speed, are not reliable in the field, or simply do not work at all. The main approach for localizing these defects today is time domain reflectometry (TDR) [1]. TDR sends a short electrical pulse into the device and monitors the time to receive reflections. These reflections can correspond to shorts, opens, bends in a wire, normal interfaces between devices, or high resistance defects. Ultimately anything that produces an electrical impedance change will produce a TDR response. These signals are compared to a good part and require time consuming layer-by-layer deprocessing and comparison to a standard part. When complete, the localization is typically at best to within 200 microns. A new approach to isolating high resistance defects has been recently developed using current imaging. In recent years, current imaging through magnetic field detection has become a main-stream approach for short localization in the package [2] and is also heavily utilized for die level applications [3]. This core technology has been applied to the localization of high resistance defects. This paper will describe the approach, and give examples of test samples as well as results from actual yield failures.

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