NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

Author(s):  
Min-Sang Kim ◽  
Weon Wi Jang ◽  
Ji-Myoung Lee ◽  
Sung-Min Kim ◽  
Eun-Jung Yun ◽  
...  
2008 ◽  
Vol 52 (10) ◽  
pp. 1578-1583 ◽  
Author(s):  
Weon Wi Jang ◽  
Jun-Bo Yoon ◽  
Min-Sang Kim ◽  
Ji-Myoung Lee ◽  
Sung-Min Kim ◽  
...  

2008 ◽  
Vol 92 (7) ◽  
pp. 073102 ◽  
Author(s):  
J. Dufourcq ◽  
S. Bodnar ◽  
G. Gay ◽  
D. Lafond ◽  
P. Mur ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.


2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.


1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  

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