High-power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit

2004 ◽  
Author(s):  
S. Yoshida ◽  
J. Li ◽  
T. Wada ◽  
H. Takehara
Keyword(s):  
High Power ◽  
Switching Time ◽  
Gan Hfet ◽  
Inverter Circuit ◽  
State Resistance

High Power Inverter Circuit from GTO to IGCT and its Application on AC Driving Locomotive

2011 ◽  
Vol 354-355 ◽  
pp. 1394-1399
Author(s):  
Su Rong Qu ◽  
Zhong Yang Zhang
Keyword(s):  
High Power ◽  
Electronic Device ◽  
Superior Performance ◽  
Power Electronic ◽  
Large Power ◽  
Ac Drive ◽  
New Type ◽  
Inverter Circuit ◽  
Type Power ◽  
Paper Author

IGCT is a kind of new type power electronic device which developed from GTO and IGBT . In this paper, Author based on analysis of the internal structure of GTO, shows how GTO development IGCT through technical methods.Through simulation of its off and on performance, the work curve and comparing results of the two devices are given. Then on two components of the inverter circuits are analyzed and compared. Thinking in large power AC drive locomotive, IGCT inverter is greatly simplifier than GTO inverter circuit, and superior performance,it will become the main converter for AC driving locomotive.

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

2009 ◽  
Vol 1202 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yuki Niiyama ◽  
Takehiko Nomura ◽  
Masayuki Iwami ◽  
yoshihiro Satoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Silicon Substrates ◽  
Enhancement Mode ◽  
Threshold Voltages ◽  
Source Voltage ◽  
Gan Hfet ◽  
Output Characteristics ◽  
High Temperature Operation ◽  
State Resistance

AbstractWe have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

scholarly journals Cиловой МДП-транзистор на 4H-SiC с эпитаксиальным заглубленным каналом

2020 ◽  
Vol 54 (1) ◽  
pp. 79
Author(s):  
А.И. Михайлов ◽  
А.В. Афанасьев ◽  
В.А. Ильин ◽  
В.В. Лучинин ◽  
С.А. Решанов ◽  
...  
Keyword(s):  
High Power ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Buried Channel ◽  
Conventional Technology ◽  
Heavily Doped ◽  
Effect Transistor ◽  
State Resistance

Abstract A method for reducing the on-state resistance of a high-power 4 H -SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p -region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.

Short Circuit Ruggedness of 600 V SiC Trench JFETs

2020 ◽  
Vol 1004 ◽  
pp. 933-938
Author(s):  
Vinoth Sundaramoorthy ◽  
Lukas Kranz ◽  
Stephan Wirths ◽  
Marco Bellini ◽  
Gianpaolo Romano ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Operating Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
State Resistance ◽  
Resistance Value ◽  
A Current ◽  
Short Circuit Condition

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.

Development of MEMS Power Sensor Package

2010 ◽  
Vol 7 (3) ◽  
pp. 169-174 ◽  
Author(s):  
Bruce C. Kim ◽  
Rahim Kasim
Keyword(s):  
High Power ◽  
Switching Time ◽  
Power Network ◽  
High Current ◽  
Mems Devices ◽  
Mems Switches ◽  
Power Mems ◽  
Power Sensor ◽  
Sensor Package ◽  
Power Capability

This article presents the design, fabrication, and packaging of advanced MEMS in high power applications. The advanced MEMS devices are used as a power sensor to detect high current in a distributed power network. We designed and fabricated an M × N array of low power MEMS switches to handle high power which are mass actuated by an external magnetic field. The array of MEMS devices has been packaged in a conventional package and testing was performed to validate its operation. The switching time was very compatible with the existing solid state switches with much higher order of power capability.

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

2006 ◽  
Vol 53 (12) ◽  
pp. 2908-2913 ◽  
Author(s):  
Takehiko Nomura ◽  
Hiroshi Kambayashi ◽  
Mitsuru Masuda ◽  
Sonomi Ishii ◽  
Nariaki Ikeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Fast Switching ◽  
High Breakdown Voltage ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
State Resistance
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