scholarly journals A Simulation-Based Soft Error Estimation Methodology for Computer Systems

Author(s):  
M. Sugihara ◽  
T. Ishihara ◽  
M. Muroyama ◽  
K. Hashimoto
2007 ◽  
Vol E90-C (10) ◽  
pp. 1983-1991 ◽  
Author(s):  
M. SUGIHARA ◽  
T. ISHIHARA ◽  
K. MURAKAMI

2015 ◽  
Vol 1108 ◽  
pp. 79-84 ◽  
Author(s):  
Haider F. Abdul Amir ◽  
Fuei Pien Chee

Silicon is always the dominant semiconductor material of the modern semiconductor industry. This is as silicon can retain its semiconductor characteristics even at a higher temperature while the other semiconductor materials can't. However, when a silicon device is exposed to a flux of energetic radiation or particles, the effects from the radiation and the induced secondary particles can cause several degradation of the device performance. For the purpose of investigate the resultant effects from the bombardment of neutrons and the behavior of secondary charged particles in the silicon model, the neutron displacement defect was measured in situ and then followed by the simulation based on Monte Carlo method. The bombardment of neutron in the silicon model produce at least three secondary particles, which are alpha ˸α˹ particles, proton (p) particles and silicon recoil atoms, through the reactions of ˸̾˼α˹˼˰˸̾˼̀˹˰and neutron scattering respectively. The kinetic energy and range of these charged particles are different among themselves, and thus the probability of hitting and degradation effects in the silicon materials are varies. The simulation calculation showed that ˸̾˼α˹˰reaction induced soft error cross section of about 8.7 x 10-14 cm2 and for recoil atoms, it is about 2.9 x 10-15 cm2. There was no error of the silicon device configuration induced by proton particles until 1010 n/cm2.neutron fluence. It can be concluded that the largest portion of error in the silicon model is induced by the secondary alpha ˸α˹ particles.


2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Arash Ramezani ◽  
Hendrik Rothe

The threat imposed by terrorist attacks is a major hazard for military installations, for example, in Iraq and Afghanistan. The large amounts of rockets, artillery projectiles, and mortar grenades (RAM) that are available pose serious threats to military forces. An important task for international research and development is to protect military installations and implement an accurate early warning system against RAM threats on conventional computer systems in out-of-area field camps. This work presents a method for determining the trajectory, caliber, and type of a projectile based on the estimation of the ballistic coefficient. A simulation-based optimization process is presented that enables iterative adjustment of predicted trajectories in real time. Analytical and numerical methods are used to reduce computing time for out-of-area missions and low-end computer systems. A GUI is programmed to present the results. It allows for comparison between predicted and actual trajectories. Finally, different aspects and restrictions for measuring the quality of the results are discussed.


2006 ◽  
Vol 45 (4B) ◽  
pp. 3185-3188 ◽  
Author(s):  
Yoshiharu Tosaka ◽  
Ryozo Takasu ◽  
Hiedo Ehara ◽  
Taiki Uemura ◽  
Hideki Oka ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 749
Author(s):  
Fábio Batagin Armelin ◽  
Lírida Alves de Barros Naviner ◽  
Roberto d’Amore

Soft-Error Vulnerability (SEV) is a parameter used to evaluate the robustness of a circuit to the induced Soft Errors (SEs). There are many techniques for SEV estimation, including analytical, electrical and logic simulations, and emulation-based approaches. Each of them has advantages and disadvantages regarding estimation time, resources consumption, accuracy, and restrictions over the analysed circuit. Concerning the ionising radiation effects, some analytical and electrical simulation approaches take into account how the circuit topology and the applied input patterns affect their susceptibilities to Single Event Transient (SET) at the gate level. On the other hand, logic simulation and emulation techniques usually ignore these SET susceptibilities. In this context, we propose a logic simulation-based probability-aware approach for SEV estimation that takes into account the specific SET susceptibility of each circuit gate. For a given operational scenario, we extract the input patterns applied to each gate and calculate its specific SET susceptibility. For the 38 analysed benchmark circuits, we obtained a reduction from 15.27% to 0.68% in the average SEV estimation error, when comparing the estimated value to a reference obtained at the transistor level. The results point out an improvement of the SEV estimation process by considering the specific SET susceptibilities.


Technologies ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 5 ◽  
Author(s):  
Georgios Ioannis Paliaroutis ◽  
Pelopidas Tsoumanis ◽  
Nestor Evmorfopoulos ◽  
George Dimitriou ◽  
Georgios I. Stamoulis

Integrated circuit susceptibility to radiation-induced faults remains a major reliability concern. The continuous downscaling of device feature size and the reduction in supply voltage in CMOS technology tend to worsen the problem. Thus, the evaluation of Soft Error Rate (SER) in the presence of multiple transient faults is necessary, since it remains an open research field. In this work, a Monte-Carlo simulation-based methodology is presented taking into consideration the masking mechanisms and placement information. The proposed SER estimation tool exploits the results of a Single Event Transient (SET) pulse characterization process with HSPICE to obtain an accurate assessment of circuit vulnerability to radiation. A new metric, called Glitch Latching Probability, which represents the impact of the masking effects on a SET, is introduced to identify gate sensitivity and, finally, experimental results on a set of ISCAS’ 89 benchmarks are presented.


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