Nonlinear discrete elements in electro-thermal model of thick-film structure

2005 ◽  
Author(s):  
G. Blad ◽  
D. Klepacki ◽  
J. Potencki
Keyword(s):  
Thick Film ◽  
Thermal Model ◽  
Film Structure ◽  
Discrete Elements

Electrical characterization of thick film materials

2015 ◽  
Vol 2015 (CICMT) ◽  
pp. 000079-000084
Author(s):  
L. Rebenklau ◽  
P. Gierth ◽  
H. Grießmann
Keyword(s):  
Thick Film ◽  
Thick Films ◽  
Thermal Characteristics ◽  
Electrical Characterization ◽  
Film Structure ◽  
Low Noise ◽  
Measurement Methods ◽  
Electrical Performance ◽  
Track Width ◽  
Thick Film Technology

The thick-film technology is one of the fundamental technologies for the production of circuit carriers for electronic modules. It is mainly used in areas with harsh environmental conditions, such as sensor or automotive applications. Basis of the thick film technology are glass-based pastes, which are screen printed on ceramic substrates and fired in a high temperature process at (500…1000) ° C. Such thick film pastes are commercially available from various suppliers as elements of paste systems, which mainly include compatible isolation, resistance and conductive pastes. There are a number of requirements according the fired thick film characteristics, such as high breakdown voltage of isolation thick films or low noise performances of resistance thick films. However, the most requirements are concentrating on conductor thick films. They should guarantee excellent properties in terms of assembling (soldering, bonding) which are focused in a many publications. Simultaneously, they should also offer very good electrical characteristics that have not been completely investigated until today. At Fraunhofer IKTS different measurement methods are developed and adapted to characterize the electrical performance of thick film structures. Already well known is the short term overload (STOL) measurement of thick film resistances, which determining the maximum power dissipation of the thick film structure. The basic concept of this measurement is adapted on conductive thick film structures like conductive tracks or vias. The investigations show correlations between geometrical thick film properties and the resulting thermal characteristics of the thick film structure. Results can be used to improve screen-printing layouts in terms of cost reduction (paste consumption) and thermal management (track width, via diameter), but can also help to improve paste compositions itself. The paper will give an overview of the used electrical measurement methods and present exemplary results.

Reverse Lift-Off Process and Application for Cu-Zr-Ti Metallic Glass Thick Film Structures

2015 ◽  
Vol 9 (6) ◽  
pp. 646-654 ◽  
Author(s):  
Shigetaka Watanabe ◽  
◽  
Junpei Sakurai ◽  
Mizue Mizoshiri ◽  
Seiichi Hata
Keyword(s):  
Amorphous Alloy ◽  
Metallic Glass ◽  
Thick Film ◽  
Cross Section ◽  
Rectangular Cross Section ◽  
Film Structure ◽  
Sputter Deposition ◽  
Uniform Thickness ◽  
Target Structure ◽  
Lift Off

In technologies involving micro electromechanical systems, lift-off processes combined with sputter deposition are general patterning methods for the formation of amorphous alloy thick film structures. However, the thicknesses of structures fabricated in this manner are not uniform because sputtered particles are blocked by the sidewalls of the lift-off layer. In this paper, a reverse lift-off process is proposed as a new patterning method for fabricating amorphous alloy thick film structures of uniform thickness. In the reverse lift-off process, a template of the desired structure is formed on top of the chosen substrate. The thick film structure is then formed by sputter deposition on the top surface of the template. In contrast to a conventional lift-off process, here the thickness of the structure is uniform because there is nothing to hinder the sputtered particles. To demonstrate this process, we successfully fabricated a Cu-Zr-Ti metallic glass thick film structure with a uniform film thickness and a rectangular cross section across different target structure widths and thicknesses. This demonstrates that the reverse lift-off process is more suitable than conventional lift-off processes for the fabrication of metallic glass thick film structures.

scholarly journals On Possibilities of Synthesis of a Useful Model of Thick Film Components

1985 ◽  
Vol 12 (1) ◽  
pp. 71-89 ◽  
Author(s):  
Stanisław Paszczyński
Keyword(s):  
Thick Film ◽  
Formation Process ◽  
Structural Parameters ◽  
Film Structure ◽  
Model Verification ◽  
Complete Model ◽  
Research Directions ◽  
Resistive Film ◽  
Common Features ◽  
Measuring Methods

The problems in forming a useful model of a thick film component have been analysed. The need for such a model has been shown. Common features of thick film structures have been defined and, using the example of resistive film models that have been presented by previous authors, the trends in thick film structure modelling have been shown. Limitations of previous models have been described and, using the example of thick film resistors, the components of structure which should be taken into consideration in a complete model have been compiled. The problems in dealing with model verification, especially with regard to the choice of the criteria of quality and also in the choice of the measuring methods for obtaining component characteristics together with the values of the structural parameters, have been presented. Possible stages in the formation process of such a model and also research directions which could improve the process have been suggested.

J164022 Fabrication of Cu-Zr-Ti thick film structure of metallic glass

2012 ◽  
Vol 2012 (0) ◽  
pp. _J164022-1-_J164022-4
Author(s):  
Sigetaka Watanabe ◽  
Junpei Sakurai ◽  
Seiichi Hata
Keyword(s):  
Metallic Glass ◽  
Thick Film ◽  
Film Structure

Thick-Film Structure Geometry Effect on Carbon Nanotubes Synthesized by Chemical Vapor Deposition

2008 ◽  
Vol 47 (6) ◽  
pp. 4788-4791
Author(s):  
Kuang-Chung Chen ◽  
Chia-Fu Chen ◽  
Wha-Tzong Whang ◽  
Shu-Hsing Lee ◽  
Kuo-Feng Chen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Thick Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Structure ◽  
Geometry Effect ◽  
Structure Geometry

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

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