High breakdown electric field MIS free fully recessed-gate normally-off AlGaN/GaN HEMT with N2O plasma treatment

2019 ◽  
pp. 1-1
Author(s):  
Yunlong He ◽  
Qing He ◽  
Minhan Mi ◽  
Meng Zhang ◽  
Chong Wang ◽  
...  
Keyword(s):  
Electric Field ◽  
Plasma Treatment ◽  
Breakdown Electric Field ◽  
Gan Hemt ◽  
Recessed Gate ◽  
High Breakdown Electric Field

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

2018 ◽  
Vol 112 (3) ◽  
pp. 032101 ◽  
Author(s):  
Xiaodong Yan ◽  
Ivan S. Esqueda ◽  
Jiahui Ma ◽  
Jesse Tice ◽  
Han Wang
Keyword(s):  
Electric Field ◽  
Breakdown Electric Field ◽  
High Breakdown Electric Field

High-κ Dielectrics for 4H-Silicon Carbide: Present Status and Future Perspective

2021 ◽  
Author(s):  
Amna Siddiqui ◽  
Rabia Yasmin Khosa ◽  
Muhammad Usman
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Properties ◽  
Electric Field ◽  
High Power ◽  
Present Status ◽  
Wide Bandgap ◽  
Future Perspective ◽  
Breakdown Electric Field ◽  
High Breakdown Electric Field

Owing to its superior material and electrical properties such as wide bandgap and high breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power, high temperature, and radiation...

scholarly journals AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

2015 ◽  
Vol 12 (20) ◽  
pp. 20150694-20150694
Author(s):  
Xiangdong Li ◽  
Weihang Zhang ◽  
Mengdi Fu ◽  
Jincheng Zhang ◽  
Haiqing Jiang ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Breakdown Electric Field ◽  
Temperature Performance ◽  
Very High ◽  
High Breakdown Electric Field

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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