500°C Silicon Carbide MOSFET-Based Integrated Circuits
2014 ◽
Vol 2014
(HITEC)
◽
pp. 000072-000075
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Keyword(s):
In this work silicon carbide MOSFET based integrated circuits such as operational amplifier. 27-stage ring oscillator and CMOS-based inverter have been designed, fabricated and successfully tested at high temperatures. Silicon carbide MOSFETs remained fully operational from room temperature to 500°C with stable I-V characteristics. Also 27-stage ring oscillator, operational amplifier and CMOS inverter tested and shown to be functional up to 500°C, with relatively small performance change between 300°C and 500°C. High temperature reliability evaluation of these circuits demonstrate stable operation and both the ring oscillator and OpAmp survived more than 100 hours at 500°C.
2012 ◽
Vol 717-720
◽
pp. 1265-1268
Keyword(s):
2010 ◽
Vol 2010
(HITEC)
◽
pp. 000305-000309
◽
Keyword(s):
2012 ◽
Vol 717-720
◽
pp. 1261-1264
◽
2021 ◽
Vol 2021
(HiTEC)
◽
pp. 000008-000012
Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 903-906
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