A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz

2015 ◽  
Vol 25 (10) ◽  
pp. 663-665 ◽  
Author(s):  
Peter Song ◽  
Michael A. Oakley ◽  
A. Cagri Ulusoy ◽  
Mehmet Kaynak ◽  
Bernd Tillack ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Power Added Efficiency ◽  
W Band ◽  
Class E

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

scholarly journals A Modified Design of Class-E Power Amplifier with Balanced FETs and High Output Power for RFID Applications

2021 ◽  
Vol 19 ◽  
pp. 28-37
Author(s):  
Muhammad Noaman Zahid ◽  
Jianliang Jiang ◽  
Heng Lu ◽  
Hengli Zhang
Keyword(s):  
Radio Frequency ◽  
Output Power ◽  
Power Amplifier ◽  
Radio Frequency Identification ◽  
Field Effect Transistors ◽  
High Output Power ◽  
Matching Network ◽  
Power Added Efficiency ◽  
High Output ◽  
Class E

In Radio Frequency (RF) communication, a Power Amplifier (PA) is used to amplify the signal at the required power level with less utilization of Direct Current (DC) power. The main characteristic of class-E PA is sturdy nonlinearity due to the switching mode action. In this study, a modified design of class-E PA with balanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and high output power for Electronic Article Surveillance (EAS) Radio Frequency Identification (RFID) application is presented. MOSFETs are adjusted to have high output performance of about 80% for RFID-based EAS system. A matching network is also proposed for accurate matching because there are differences in the behavior between RF waves and low frequency waves. The design of a matching network is a tradeoff among the complexity, adjustability, implementation, and bandwidth for the required output power and frequency. The implemented PA is capable of providing 44.8 dBm output power with Power-Added Efficiency (PAE) of 78.5% at 7.7 MHz to 8.7 MHz.

A 2.4-GHz 0.18μm Full-CMOS Single-Stage Class-E Power Amplifier With Temperature Effect for ISM Band Wireless Communication

2007 ◽  
Author(s):  
Mu-Chun Wang ◽  
Zhen-Ying Hsieh ◽  
Chieu-Ying Hsu ◽  
Shuang-Yuan Chen ◽  
Heng-Sheng Huang
Keyword(s):  
Temperature Effect ◽  
Output Power ◽  
Power Amplifier ◽  
Single Stage ◽  
Design System ◽  
Cmos Process ◽  
Power Added Efficiency ◽  
Ism Band ◽  
Stage Class ◽  
Class E

In this paper, we present a single-stage class-E power amplifier with multiple-gated shape as well as 0.18μm complementary metal-oxide-semiconductor (CMOS) process for 2.4GHz Industry-Science-Medicine (ISM) band. This power amplifier is able to be easily integrated into the system-on-chip (SoC) circuit. For the competition of lower cost and high integration in marketing concern, CMOS technology is fundamentally better than GaAs technology. We adopt the Advanced Design System software in circuit simulation coming from Agilent Company through the Chip Implementation Center (CIC) channel plus TSMC 0.18 μm device models. The simulation results with temperature effect, show the good performance such as an output power achievement of +22dBm under a 1.8V supply voltage; the power-added efficiency (PAE) is over 30%; the output impedance (S22) and the input impedance (S11) are fully lower than −15dB; the power gain (S21) is +11dB; the inverse isolation (S12) is below −26dB. This amplifier reaches its 1-dB compression point at an output level of 16.5dBm related to the input power 6.5dBm position. The output power with temperature variation from 0°C to 125°C depicts an acceptable spec. range, too.

scholarly journals Analysis and Compensation of the AM-AM and AM-PM Distortion for CMOS Cascode Class-E Power Amplifier

2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Wen An Tsou ◽  
Wen Shen Wuen ◽  
Tzu Yi Yang ◽  
Kuei Ann Wen
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Signal Source ◽  
Nonlinear Capacitance ◽  
Power Added Efficiency ◽  
Equivalent Impedance ◽  
Common Gate ◽  
Class E

Analysis and compensation methodology of the AM-AM and AM-PM distortion of cascode class-E power amplifiers are presented. A physical-based model is proposed to illustrate that the nonlinear capacitance and transconductance cause the AM-AM and AM-PM distortion when modulating the supply voltage of the PA. A novel methodology that can reduce the distortion is also proposed. By degenerating common-gate transistor into a resistor, the constant equivalent impedance is obtained so that the AM-AM and AM-PM distortion is compensated. An experimental prototype of 2.6 GHz cascode class-E power amplifier with the AM-AM and AM-PM compensation has been integrated in a 0.18 μm CMOS technology, occupies a total die area of 1.6 mm2. It achieves a drain efficiency of 17.8% and a power-added efficiency of 16.6% while delivering 12 dBm of linear output power and drawing 31 mA from a 1.8 V supply. Finally, a co-simulation result demonstrated that, when the distortion of the PA has been compensated, the EVM is improved from −17 dB to −19 dB with an IEEE802.11a-like signal source.

Performance study of an inverse class E power amplifier with series tunable parallel resonant tank

2011 ◽  
Vol 3 (4) ◽  
pp. 405-413 ◽  
Author(s):  
Tao Cao ◽  
Songbai He ◽  
Fei You
Keyword(s):  
Power Amplifier ◽  
Supply Voltage ◽  
Power Gain ◽  
Performance Study ◽  
Power Added Efficiency ◽  
Optimum Operation ◽  
Good Agreement ◽  
Class E ◽  
Class F

An analysis of operation of a modified inverse class E power amplifier is presented. The proposed amplifier that has a series tunable parallel resonant tank is similar to a hybrid of class F and inverse class E. The principles and design equations required to determine the optimum operation of the amplifier are analyzed in detail. The practical circuit using LDMOS MRF21010 is shown to be able to deliver 40.02 dBm outpout power at 155 MHz. The amplifier achieves power-added efficiency (PAE) of 78.18% and drain efficiency of 78.42%, and exhibits 25.02 dB power gain when operates from a 21 V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being achieved.

scholarly journals A Design Methodology and Analysis for Transformer-Based Class-E Power Amplifier

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 494 ◽  
Author(s):  
Alfred Lim ◽  
Aaron Tan ◽  
Zhi-Hui Kong ◽  
Kaixue Ma
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Design Methodology ◽  
Design Procedure ◽  
Cmos Process ◽  
Process Technology ◽  
Power Added Efficiency ◽  
Optimum Operation ◽  
Load Network ◽  
Class E

This paper proposes a new technique and design methodology on a transformer-based Class-E complementary metal-oxide-semiconductor (CMOS) power amplifier (PA) with only one transformer and two capacitors in the load network. An analysis of this amplifier is presented together with an accurate and simple design procedure. The experimental results are in good agreement with the theoretical analysis. The following performance parameters are determined for optimum operation: The current and voltage waveform, the peak value of drain current and drain-to-source voltage, the output power, the efficiency and the component values of the load network are determined to be essential for optimum operation. The measured drain efficiency (DE) and power-added efficiency (PAE) is over 70% with 10-dBm output power at 2.4 GHz, using a 65 nm CMOS process technology.

scholarly journals A 1.8 GHz Power Amplifier Class-E with Good Average Power Added Efficiency

2013 ◽  
Vol 04 (08) ◽  
pp. 504-509
Author(s):  
Mousa Yousefi ◽  
Ziaadin Daie Koozehkanani ◽  
Jafar Sobhi ◽  
Hamid Jangi
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Power Added Efficiency ◽  
Class E

A 65nm CMOS 30dBm class-E RF power amplifier with 60% power added efficiency

2008 ◽  
Author(s):  
M. Apostolidou ◽  
M.P. van der Heijden ◽  
D.M.W. Leenaerts ◽  
J. Sonsky ◽  
A. Heringa ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Class E

Comparative Analysis of the Effect of Loaded Quality Factor, Technology Node and Operating Frequency on Various Class E Power Amplifier Topologies

2020 ◽  
pp. 2150083
Author(s):  
Mir Mohsina Rahman ◽  
G. M. Rather
Keyword(s):  
Comparative Analysis ◽  
Quality Factor ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
Operating Frequency ◽  
Resonant Circuit ◽  
Circuit Parameter ◽  
Power Added Efficiency ◽  
Technology Node ◽  
Class E

This paper aims to explore and compare the dependence of power amplifier performance parameters on the loaded quality factor of the resonant circuit, the technology node used and the operating frequency for different variants of the class E power amplifier. In spite of the fact that the circuit parameter variations of the basic class E amplifier are present in the literature, there is a lack of comparative analysis with respect to other class E power amplifiers based on diverse tuned load networks. Moreover, the effects of these three parameters are rarely discussed. The comparative analysis helps the designers to narrow down the selection of a power amplifier to be used for a particular application. This study is focused on the use of class E power amplifiers in biomedical implants at the Medical Implant Communication Service band and Industrial Scientific and Medical band. It is observed that the power added efficiency and the power gain have an inverse dependence on the loaded quality factor, frequency and the technology node while the output power depends directly on these parameters.

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