Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-Based Light-Emitting Diodes
Keyword(s):
2006 ◽
Vol 18
(10)
◽
pp. 1146-1148
◽
Keyword(s):
2011 ◽
Vol 8
(4)
◽
pp. 340-345
◽
2002 ◽
Vol 46
(4)
◽
pp. 477-480
◽
Keyword(s):
2013 ◽
Vol 31
(1)
◽
pp. 01A101
◽