Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering

2014 ◽  
Author(s):  
A. Paskaleva ◽  
B. Hudec ◽  
P. Jancovic ◽  
K. Frohlich
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Interface Engineering ◽  
Electrode Interface

scholarly journals Tuning Oxygen Vacancies and Resistive Switching Properties in Ultra-Thin HfO2 RRAM via TiN Bottom Electrode and Interface Engineering

2021 ◽  
pp. 149386
Author(s):  
Zhihua Yong ◽  
Karl-Magnus Persson ◽  
Mamidala Saketh Ram ◽  
Giulio D'Acunto ◽  
Yi Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Bottom Electrode ◽  
Interface Engineering

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

High-Endurance Scalable PZT Capacitors Using Thin SRO/Pt Stacked Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
K Yamakawa ◽  
O. Arisumi ◽  
O. Hidaka ◽  
T. Morimoto ◽  
I. Kunishima ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Bottom Electrode ◽  
Random Orientation ◽  
Pt Electrode ◽  
Thermal Budget ◽  
Pzt Films ◽  
Electrode Interface

Abstract90nm-thick PZT capacitors using Pt/thinSRO stacked electrodes showed 2V operation capability, no remanence degradation after more than 1E10 switching cycles, and low imprint. Effects of SRO(SrRuO3) electrode have been studied for high-endurance PZT capacitors. In capacitors with only top SRO electrodes, the SRO increased polarization and improved saturation property compared to Pt electrode PZTs. Fatigue and imprint degradation was caused by Pt bottom electrode interface deterioration. It is thought that the oxygen vacancies created with Pb vacancies are important respecting endurance and retention. PZT films crystallized on SRO showed smaller coercive voltage Vc (2/3 of that for PZT/Pt) with random orientation. The SRO layers block Pb diffusion and supply oxygen, thereby resulting in less oxygen vacancy accumulation at PZT interfaces. We have improved the imprint property by the reduction of thermal budget in SRO/PZT/SRO structures.

Low Temperature Hydrogen Induced Degradation of (Ba,Sr)TiO3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
J. D. Baniecki ◽  
C. Parks ◽  
R. B. Laibowitz ◽  
T. M. Shaw ◽  
J. Lian ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Bottom Electrode ◽  
Electrical Characterization ◽  
Asymmetric Distribution ◽  
Leakage Currents ◽  
Metal Electrodes ◽  
Thin Film Capacitors ◽  
Electrode Interface ◽  
Secondary Ion

AbstractWe have used electrical characterization and secondary ion mass spectroscopy (SIMS) to investigate the influence of hydrogen or deuterium (H/D) on the degradation of the electrical properties of metal/Ba0.7Sr0.3TiO3/metal (M/BSTO/M) thin film capacitors after forming gas annealing (FGA). Leakage and dielectric relaxation currents increase after FGA at temperatures as low as 23C. SIMS profiling shows that at 23C H/D diffuses through thin film metal electrodes and accumulates at electrode interfaces. The location (top or bottom electrode interface) of H/D accumulation is dependent on the type of electrodes and capacitor structure. The resulting asymmetric distribution of H/D leads to large voltage offsets in the C-V characteristic, asymmetric leakage currents, and increased dielectric relaxation currents. Possible mechanisms for increased leakage and relaxation currents after FGA are discussed.

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