A 100 Gb/s transimpedance amplifier with diode-connecting input-resistance-reduction in 32 nm CMOS technology

2015 ◽  
Author(s):  
Joseph Chong ◽  
Dong Sam Ha
Keyword(s):  
Input Resistance ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Resistance Reduction

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

scholarly journals A Current-Mode TransImpedance Amplifier for Capacitive Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari
Keyword(s):  
Current Mode ◽  
Cmos Technology ◽  
Detection Sensitivity ◽  
Transimpedance Amplifier ◽  
Current Conveyors ◽  
Interface Circuit ◽  
Linear Behavior ◽  
Board Level ◽  
Voltage Conversion ◽  
A Current

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

scholarly journals A 24.88 nV/√Hz Wheatstone Bridge Readout Integrated Circuit with Chopper-Stabilized Multipath Operational Amplifier

2020 ◽  
Vol 10 (1) ◽  
pp. 399 ◽  
Author(s):  
Kwonsang Han ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Donggeun You ◽  
Hyunwoo Heo ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Operational Amplifier ◽  
Wheatstone Bridge ◽  
Input Resistance ◽  
Cmos Technology ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Readout Integrated Circuit ◽  
Chopper Stabilization

This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.

scholarly journals A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2680
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki
Keyword(s):  
Phase Noise ◽  
Cmos Technology ◽  
High Gain ◽  
Transimpedance Amplifier ◽  
Short Term ◽  
Microelectromechanical System ◽  
Fully Differential ◽  
Mems Oscillator ◽  
Measured Input ◽  
Mode Resonator

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

8 Gbits/s inductorless transimpedance amplifier in 90 nm CMOS technology

2013 ◽  
Vol 79 (1) ◽  
pp. 27-36 ◽  
Author(s):  
Mohamed Atef ◽  
Francisco Aznar ◽  
Stefan Schidl ◽  
Andreas Polzer ◽  
Wolfgang Gaberl ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Transimpedance Amplifier
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