New GaAs PIN Diodes with Lower Dissipation Loss, Faster Switching Speed at Lower Drive Power

2005 ◽  
Author(s):  
C. Barratt ◽  
A. Christou ◽  
N. Jansen ◽  
R.E. Neidert ◽  
M.L. Ruess ◽  
...  
Keyword(s):  
Drive Power ◽  
Switching Speed ◽  
Pin Diodes ◽  
Dissipation Loss

SWITCHING SPEED ENHANCEMENT OF NOVEL SUPERLATTICE GaAs PIN DIODES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-281-C5-284
Author(s):  
Z. HATZOPOULOS ◽  
A. GEORGAKILAS ◽  
A. CHRISTOU
Keyword(s):  
Switching Speed ◽  
Pin Diodes

Investigation of the effect of the constructive and mode parametres of a combined rocker on the power of the drive of the working bodies

2019 ◽  
pp. 82-85
Author(s):  
Pavel Ivanovich Pavlov ◽  
Viktor Vladislavovich Korsak ◽  
Aleksandr Olegovich Vezirov ◽  
Dmitriy Vadimovich Mukhin
Keyword(s):  
Operating Parameters ◽  
Regression Equations ◽  
Drive Power ◽  
Minimum Value ◽  
Working Bodies

The regression equations and graphical dependencies are obtained, which describe the influence of design and operating parameters on the drive power of the working bodies. The value of the design and operating parameters in which the power required to drive the working bodies, will have a minimum value  are experimentally determined.

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

ChemInform Abstract: SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES

1978 ◽  
Vol 9 (31) ◽  
Author(s):  
A. ROSEN ◽  
G. A. SWARTZ ◽  
F. C. DUIGON ◽  
A. M. GOMBAR
Keyword(s):  
High Power ◽  
Simple Method ◽  
Pin Diodes

A compact omnidirectional to directional frequency reconfigurable antenna for wireless sensor network applications

2021 ◽  
pp. 1-12
Author(s):  
Melvin Chamakalayil Jose ◽  
Radha Sankararajan ◽  
Balakrishnapillai Suseela Sreeja ◽  
Mohammed Gulam Nabi Alsath ◽  
Pratap Kumar
Keyword(s):  
Wireless Sensor Network ◽  
Sensor Network ◽  
Radiation Pattern ◽  
Antenna System ◽  
Wireless Sensor ◽  
Dual Band ◽  
Design Parameters ◽  
Pin Diodes ◽  
Band Frequency ◽  
Directional Radiation

Abstract In the proposed research paper, a novel compact, ultra-wideband electronically switchable dual-band omnidirectional to directional radiation pattern microstrip planar printed rectangular monopole antenna (PRMA) has been presented. The proposed antenna system has an optimum size of 0.26 λ0 × 0.28 λ0. A combination of radiators, reflectors, and two symmetrical grounds does place on the same layer of the rectangular microstrip PRMA. The frequency agility and the radiation pattern from omnidirectional to directional are achieved using two SMD PIN diodes (SMP1340-04LF). The directional radiation patterns with 180° phase shifts are achieved at the C-band frequency spectrum. The parametric study of the proposed antenna system was performed for different design parameters, and the antenna characteristics were analyzed. An antenna prototype is fabricated using the printed circuit board etching method by using RMI UV laser etching and cutting tools. The measurements of the proposed antenna are conducted in an anechoic chamber to validate the simulations. There are three states of operations due to two SMD PIN diodes being used in switching circuits. In state-I, the proposed antenna radiates at 6.185 GHz (5.275–6.6 75 GHz) in the Ф = 270° direction with a gain of 2.1 dBi, whereas in state-II, it radiates at 5.715 GHz (5.05–6.8 GHz) in the Ф = 90° direction with a gain of 2.1 dBi. In state-III, the antenna exhibits the X-band frequency with center frequency at 9.93 GHz (8.845–10.49 GHz), and the omnidirectional pattern offers a gain of 4.1 dBi. The features of the proposed antenna are suitable for high-speed wireless sensor network communication in industries such as chemical reactors in oil and gas and pharmaceuticals. It is also well suited for IoT and 5G-sub-6-GHz applications.

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