Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation

Author(s):  
M. H. Li ◽  
Y. Jiang ◽  
V. Y. -Q. Zhuo ◽  
E. -G. Yeo ◽  
L. -T. Law ◽  
...  
2020 ◽  
Vol 8 (38) ◽  
pp. 13368-13374
Author(s):  
Muhammad Umair Khan ◽  
Gul Hassan ◽  
Jinho Bae

This paper proposes a novel soft ionic liquid (IL) electrically functional device that displays resistive memory characteristics using poly(acrylic acid) partial sodium salt (PAA-Na+:H2O) solution gel and sodium hydroxide (NaOH) in a thin polydimethylsiloxane (PDMS) cylindrical microchannel.


2013 ◽  
Vol 221 (1) ◽  
pp. 5-14 ◽  
Author(s):  
Kerstin Jost ◽  
Wouter De Baene ◽  
Iring Koch ◽  
Marcel Brass

The role of cue processing has become a controversial topic in research on cognitive control using task-switching procedures. Some authors suggested a priming account to explain switch costs as a form of encoding benefit when the cue from the previous trial is repeated and hence challenged theories that attribute task-switch costs to task-set (re)configuration. A rich body of empirical evidence has evolved that indeed shows that cue-encoding repetition priming is an important component in task switching. However, these studies also demonstrate that there are usually substantial “true” task-switch costs. Here, we review this behavioral, electrophysiological, and brain imaging evidence. Moreover, we describe alternative approaches to the explicit task-cuing procedure, such as the usage of transition cues or the task-span procedure. In addition, we address issues related to the type of cue, such as cue transparency. We also discuss methodological and theoretical implications and argue that the explicit task-cuing procedure is suitable to address issues of cognitive control and task-set switching.


2015 ◽  
Vol 202 ◽  
pp. 28-34 ◽  
Author(s):  
Muhammad Ismail ◽  
Anwar Manzoor Rana ◽  
Ijaz Talib ◽  
Tsung-Ling Tsai ◽  
Umesh Chand ◽  
...  

Author(s):  
Jyun‐Yu Gao ◽  
Chun‐Kai Chen ◽  
Yan‐Cheng Lin ◽  
Chi‐Ching Kuo ◽  
Wen‐Chang Chen

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.


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