Electron beam test system of compact electron gun for x-ray source

Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10−2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film.

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A Fully-Automated Electron Beam Test System for VLSI Circuits

IEEE Design & Test of Computers ◽

10.1109/mdt.1985.294820 ◽

1985 ◽

Vol 2 (5) ◽

pp. 74-82 ◽

Cited By ~ 11

Author(s):

Norio Kuji ◽

Teruo Tamama ◽

Takao Yano

Keyword(s):

Electron Beam ◽

Test System ◽

Vlsi Circuits ◽

Beam Test

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Electron Beam Test System for GHz-Waveform Measurements on Transmission Lines within MMIC

10.1109/euma.1992.335734 ◽

1992 ◽

Cited By ~ 8

Author(s):

J. Fehr ◽

E. Kubalek

Keyword(s):

Electron Beam ◽

Transmission Lines ◽

Test System ◽

Beam Test

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Non-Destructive Chemical-State Analysis of Thin Films and Surface Layers (1-1000 nm) by Low-Energy Electron-Induced X-ray Spectroscopy (LEEIXS)

Advances in X-ray Analysis ◽

10.1154/s0376030800019649 ◽

1989 ◽

Vol 33 ◽

pp. 247-259 ◽

Cited By ~ 2

Author(s):

Angeli K. Gyani ◽

Phillip McClusky ◽

David S. Urch ◽

M. Charbonnicr ◽

F. Gaillard ◽

...

Keyword(s):

Electron Beam ◽

Sample Surface ◽

Peak Position ◽

Chemical State ◽

Electron Gun ◽

X Rays ◽

X Ray ◽

Zinc Oxide Films ◽

Normal Electron ◽

Nitride Layers

AbstractThe penetration depth of 1-12 keV electrons in most materials is less than one micron and the characteristic soft x-rays that are produced can be used to identify the elements present in the surface. Varying the energy of the incident electron beam enables the depth of analysis to be controlled.Soft x-rays often exhibit large 'chemical effects' (changes in peak profile and peak position) which can he correlated with chemical changes. A study of such effects for each element present in the sample surface, as a function of electron-beam energy, can in some cases, permit changes in the chemical state (valency - coordination number-spin state etc.) to be determined as a function of depth.Such analyses can be carried out either in a conventional x-ray spectrometer in which the x-ray tube has been replaced by a gas-discharge source, or in a spectrometer in which the sample is bombarded with electrons from a normal electron gun. In this paper these techniques are outlined and some applications reviewed:- the analysis of oxide layers on aluminium and steel, the analysis of aluminium-nitride layers produced by MOCVD on gallium arsenide, the analysis of silica fiims (with added boron and phosphorus oxides) on silicon and the analysis of zinc-oxide films on glass.

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An electron beam test system linked with a CAD database

Microelectronic Engineering ◽

10.1016/s0167-9317(87)80021-7 ◽

1987 ◽

Vol 7 (2-4) ◽

pp. 267-274 ◽

Cited By ~ 8

Author(s):

F. Komatsu ◽

M. Miyoshi ◽

T. Sano ◽

K. Okumura

Keyword(s):

Electron Beam ◽

Test System ◽

Beam Test

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VLSI testing with CAD-linked electron beam test system

Microelectronic Engineering ◽

10.1016/0167-9317(95)00354-1 ◽

1996 ◽

Vol 31 (1-4) ◽

pp. 319-330 ◽

Cited By ~ 2

Author(s):

Koji Nakamae ◽

Katsuyoshi Miura ◽

Hiromu Fujioka

Keyword(s):

Electron Beam ◽

Test System ◽

Beam Test ◽

Vlsi Testing

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Aspects of microanalysis in a transmission electron microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109690 ◽

1978 ◽

Vol 36 (1) ◽

pp. 510-511

Author(s):

R. Sinclair ◽

B.E. Jacobson

Keyword(s):

Grain Size ◽

Electron Beam ◽

Electron Microscope ◽

Chemical Analysis ◽

Transmission Electron Microscope ◽

Vapor Deposition ◽

Critical Currents ◽

X Ray ◽

Fine Grain ◽

Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

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X-ray micro tomography in the scanning electron microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100107678 ◽

1978 ◽

Vol 36 (1) ◽

pp. 106-107 ◽

Cited By ~ 1

Author(s):

W. Brünger

Keyword(s):

Electron Beam ◽

Electron Microscope ◽

Scanning Electron Microscope ◽

Target Surface ◽

The Body ◽

X Rays ◽

Cross Sectional ◽

X Ray ◽

Micro Tomography ◽

Scanning Electron

Reconstructive tomography is a new technique in diagnostic radiology for imaging cross-sectional planes of the human body /1/. A collimated beam of X-rays is scanned through a thin slice of the body and the transmitted intensity is recorded by a detector giving a linear shadow graph or projection (see fig. 1). Many of these projections at different angles are used to reconstruct the body-layer, usually with the aid of a computer. The picture element size of present tomographic scanners is approximately 1.1 mm2.Micro tomography can be realized using the very fine X-ray source generated by the focused electron beam of a scanning electron microscope (see fig. 2). The translation of the X-ray source is done by a line scan of the electron beam on a polished target surface /2/. Projections at different angles are produced by rotating the object.During the registration of a single scan the electron beam is deflected in one direction only, while both deflections are operating in the display tube.

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New type electron gun with electrostatic and electromagnetic lenses

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100107459 ◽

1978 ◽

Vol 36 (1) ◽

pp. 62-63

Author(s):

T. Ichinokawa ◽

H. Maeda

Keyword(s):

Electron Microscopy ◽

Electron Beam ◽

Optimum Condition ◽

Bias Voltage ◽

Electron Gun ◽

Charge Effect ◽

Micro Fabrication ◽

Maximum Brightness ◽

New Type ◽

The Ideal

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.

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