Effects of Texturing Silicon Wafer Surfaces Using Metal-Assisted Chemical Etching (MACE) Technique

2021 ◽  
Author(s):  
Nurul Huda Abdul Razak ◽  
Nowshad Amin ◽  
Tiong Sieh Kiong ◽  
Kamaruzzaman Sopian ◽  
Md. Akhtaruzzaman
Keyword(s):  
Silicon Wafer ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching ◽  
Wafer Surfaces

A Novel Fabrication Process for High Density Silicon Capacitors by using Metal-Assisted Chemical Etching

2019 ◽  
Vol 2019 (1) ◽  
pp. 000248-000253 ◽  
Author(s):  
Susumu Obata ◽  
Mitsuo Sano ◽  
Kazuo Shimokawa ◽  
Kazuhito Higuchi
Keyword(s):  
Surface Area ◽  
Silicon Wafer ◽  
Electroless Plating ◽  
Chemical Etching ◽  
Dielectric Film ◽  
High Density ◽  
Fabrication Process ◽  
Capacitance Density ◽  
Novel Method ◽  
Metal Assisted Chemical Etching

Abstract In silicon capacitors, it is most important to increase the surface area of the surface forming the capacitor. In conventional silicon capacitors, trenches are generally formed in silicon wafer using reactive ion etching (RIE) method to expand their surface area. However, with this method, the depth of trenches that can be formed was limited. Furthermore, since RIE method processes silicon wafer only one by one, productivity is low. In this paper, Metal-assisted Chemical Etching (MacEtch) is proposed as a novel method of fabricating high-density silicon capacitors to solve the problems. We used gold formed by electroless plating as a catalyst and controlled them by forming conditions. As a result, vertical trenches greater than 100 μm depth and less than 1 μm width could be formed on a silicon wafer. The silicon wafer on which these trenches are formed has a surface area 100 times or more as compared with the case where there is no trench. We formed a dielectric film and electrodes on these trench surfaces. Consequently, we have realized a silicon capacitors with a capacitance density as high as 200 nF / mm2 or more.

scholarly journals Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review

2021 ◽  
Vol 13 (19) ◽  
pp. 10766
Author(s):  
Mohammad Yasir Arafat ◽  
Mohammad Aminul Islam ◽  
Ahmad Wafi Bin Mahmood ◽  
Fairuz Abdullah ◽  
Mohammad Nur-E-Alam ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Etching ◽  
Oxidation Process ◽  
Cost Effective ◽  
Absorption Capacity ◽  
Etching Process ◽  
Black Silicon ◽  
Si Solar Cells ◽  
Metal Assisted Chemical Etching ◽  
Wafer Surfaces

The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and is considered to be a potential technique to improve the efficiency of traditional Si-based solar cells. This article aims to review the MACE technique along with its mechanism for Ag-, Cu- and Ni-assisted etching. Primarily, several essential aspects of the fabrication of BSi are discussed, including chemical reaction, etching direction, mass transfer, and the overall etching process of the MACE method. Thereafter, three metal catalysts (Ag, Cu, and Ni) are critically analyzed to identify their roles in producing cost-effective and sustainable BSi solar cells with higher quality and efficiency. The conducted study revealed that Ag-etched BSi wafers are more suitable for the growth of higher quality and efficiency Si solar cells compared to Cu- and Ni-etched BSi wafers. However, both Cu and Ni seem to be more cost-effective and more appropriate for the mass production of BSi solar cells than Ag-etched wafers. Meanwhile, the Ni-assisted chemical etching process takes a longer time than Cu but the Ni-etched BSi solar cells possess enhanced light absorption capacity and lower activity in terms of the dissolution and oxidation process than Cu-etched BSi solar cells.

Metal-Assisted Plasma Etching of Silicon: A Liquid-Free Alternative to MACE

2018 ◽  
Author(s):  
Julia Sun ◽  
Benjamin Almquist
Keyword(s):  
Liquid Phase ◽  
Plasma Etching ◽  
Chemical Etching ◽  
Gold Films ◽  
Metallic Films ◽  
Au Catalyst ◽  
Feed Concentration ◽  
Catalytic Activities ◽  
Metal Assisted Chemical Etching ◽  
Complex Nanostructures

For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. Of these, two of the most common are reactive ion etching in the gaseous phase and metal-assisted chemical etching (MACE) in the liquid phase. Though these two methods are highly established and characterized, there is a surprising scarcity of reports exploring the ability of metallic films to catalytically enhance the etching of silicon in dry plasmas via a MACE-like mechanism. Here, we discuss a <u>m</u>etal-<u>a</u>ssisted <u>p</u>lasma <u>e</u>tch (MAPE) performed using patterned gold films to catalyze the etching of silicon in an SF<sub>6</sub>/O<sub>2</sub> mixed plasma, selectively increasing the rate of etching by over 1000%. The degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration is characterized, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu. Finally, methods of controlling the etch process are briefly explored to demonstrate the potential for use as a liquid-free fabrication strategy.

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

2019 ◽  
Vol 806 ◽  
pp. 24-29 ◽  
Author(s):  
Olga V. Volovlikova ◽  
S.A. Gavrilov ◽  
P.I. Lazarenko ◽  
A.V. Kukin ◽  
A.A. Dudin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Treatment Duration ◽  
Chemical Etching ◽  
Visible Region ◽  
High Light ◽  
Silicon Films ◽  
Black Silicon ◽  
Metal Assisted Chemical Etching ◽  
Light Absorptance

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

scholarly journals Replacing Metals with Oxides in Metal-Assisted Chemical Etching Enables Direct Fabrication of Silicon Nanowires by Solution Processing

Nano Letters ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 2310-2317
Author(s):  
Maxime Gayrard ◽  
Justine Voronkoff ◽  
Cédric Boissière ◽  
David Montero ◽  
Laurence Rozes ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Solution Processing ◽  
Direct Fabrication ◽  
Metal Assisted Chemical Etching

scholarly journals Reusable Surface-Enhanced Raman Spectroscopy Substrates Made of Silicon Nanowire Array Coated with Silver Nanoparticles Fabricated by Metal-Assisted Chemical Etching and Photonic Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1531 ◽  
Author(s):  
Shi Bai ◽  
Yongjun Du ◽  
Chunyan Wang ◽  
Jian Wu ◽  
Koji Sugioka
Keyword(s):  
Silver Nanoparticles ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Surface Enhanced Raman Spectroscopy ◽  
Sers Substrate ◽  
Silicon Nanowire Array ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Metal Assisted Chemical Etching

Surface-enhanced Raman spectroscopy (SERS) has advanced over the last four decades and has become an attractive tool for highly sensitive analysis in fields such as medicine and environmental monitoring. Recently, there has been an urgent demand for reusable and long-lived SERS substrates as a means of reducing the costs associated with this technique To this end, we fabricated a SERS substrate comprising a silicon nanowire array coated with silver nanoparticles, using metal-assisted chemical etching followed by photonic reduction. The morphology and growth mechanism of the SERS substrate were carefully examined and the performance of the fabricated SERS substrate was tested using rhodamine 6G and dopamine hydrochloride. The data show that this new substrate provides an enhancement factor of nearly 1 × 108. This work demonstrates that a silicon nanowire array coated with silver nanoparticles is sensitive and sufficiently robust to allow repeated reuse. These results suggest that this newly developed technique could allow SERS to be used in many commercial applications.

Sign in / Sign up

Export Citation Format

Share Document