The correlation of reverse contrast absorption imaging with photoquenchable deep acceptor centres in semi-insulating LEC GaAs

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

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A New Deep Acceptor in Epitaxial Cubic SiC

MRS Proceedings ◽

10.1557/proc-162-495 ◽

1989 ◽

Vol 162 ◽

Author(s):

J. A. Freitas ◽

S. G. Bishop

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Excitation Intensity ◽

Acceptor Pair ◽

Deep Acceptor ◽

Intensity Dependence ◽

Pl Spectra ◽

Donor Acceptor ◽

Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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Low-dose Si ion implantation into semi-insulating LEC GaAs

Electronics Letters ◽

10.1049/el:19810570 ◽

1981 ◽

Vol 17 (21) ◽

pp. 817 ◽

Cited By ~ 4

Author(s):

H. Yamazaki ◽

T. Honda ◽

S. Miyazawa

Keyword(s):

Ion Implantation ◽

Low Dose ◽

Lec Gaas ◽

Si Ion Implantation

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Electrical inhomogeneity in 1" diameter partially dislocation-free undoped LEC GaAs

Semiconductor Science and Technology ◽

10.1088/0268-1242/3/4/004 ◽

1988 ◽

Vol 3 (4) ◽

pp. 292-301 ◽

Cited By ~ 16

Author(s):

M L Young ◽

D A O Hope ◽

M R Brozel

Keyword(s):

Lec Gaas

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Infrared Absorption Imaging of Water Ingress Into the Encapsulation of (Opto-)Electronic Devices

IEEE Journal of Photovoltaics ◽

10.1109/jphotov.2018.2877883 ◽

2019 ◽

Vol 9 (1) ◽

pp. 252-258 ◽

Cited By ~ 2

Author(s):

Johannes Hepp ◽

Andreas Vetter ◽

Stefan Langner ◽

Michael Woiton ◽

Gordana Jovicic ◽

...

Keyword(s):

Infrared Absorption ◽

Electronic Devices ◽

Water Ingress ◽

Absorption Imaging

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Specific Near-IR Absorption Imaging of Glioblastomas Using Integrin-Targeting Gold Nanorods

Advanced Functional Materials ◽

10.1002/adfm.201002253 ◽

2011 ◽

Vol 21 (6) ◽

pp. 1082-1088 ◽

Cited By ~ 52

Author(s):

Jihye Choi ◽

Jaemoon Yang ◽

Joseph Park ◽

Eunjung Kim ◽

Jin-Suck Suh ◽

...

Keyword(s):

Gold Nanorods ◽

Ir Absorption ◽

Absorption Imaging ◽

Near Ir

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Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-240-859 ◽

1991 ◽

Vol 240 ◽

Author(s):

G. Marrakchi ◽

A. Kalboussi ◽

G. Guillot ◽

M. Ben Salem ◽

H. Maaref ◽

...

Keyword(s):

High Temperature ◽

Cold Water ◽

Deep Level ◽

Electron Trap ◽

Single Donor ◽

Long Duration ◽

Donor And Acceptor ◽

Deep Donor ◽

Long Time ◽

Lec Gaas

ABSTRACTThe effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

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Photoluminescence and Plane-View Tem Studies of Epitaxial ZnSe Layers on GaAs After H2 Gas Heat-Treatment

MRS Proceedings ◽

10.1557/proc-145-429 ◽

1989 ◽

Vol 145 ◽

Author(s):

Maki Sekoguchi-pl ◽

Takashi Murase ◽

Tsunemasa Taguchi

Keyword(s):

Heat Treatment ◽

Tensile Strain ◽

Deep Level ◽

Annealed Film ◽

Edge Emission ◽

Deep Acceptor ◽

Deviation From Stoichiometry ◽

Microstructural Defects ◽

Plane View ◽

Low Temperature Photoluminescence

AbstractLow-temperature photoluminescence and plane-view TEN observations have been carried out to investigate the strain and microstructural defects in MOCVD-grown ZnSe/(100)GaAs after post- growth annealing in H2gas at temperature between 350 and 500V. A 0.35 µm thick ZnSe epitaxial layer is originally under compres- sive strain, but after annealing this receives considerably tensile strain, and the neutral deep-acceptor bound exciton () line and the edge-emission band at about 2.72 eV newly appear. The observed changes are interpreted in terms of the energy down- shift of the excitonic lines and deviation from stoichiometry. The annealed film, which deteriorated as a result of generations of dislocation tangles and small loops, results in the strong deep-level emissions around 2.25 eV.

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