Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Marrakchi ◽  
A. Kalboussi ◽  
G. Guillot ◽  
M. Ben Salem ◽  
H. Maaref ◽  
...  
Keyword(s):  
High Temperature ◽  
Cold Water ◽  
Deep Level ◽  
Electron Trap ◽  
Single Donor ◽  
Long Duration ◽  
Donor And Acceptor ◽  
Deep Donor ◽  
Long Time ◽  
Lec Gaas

ABSTRACTThe effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

Photo EPR Study of Trapping and Recombination Processes in Semi-Insulating 4H-SiC Crystals as Function of Temperature

2001 ◽  
Vol 680 ◽  
Author(s):  
E.N. Kalabukhova ◽  
S.N. Lukin ◽  
A. Saxler ◽  
W.C. Mitchel ◽  
S R. Smith ◽  
...  
Keyword(s):  
Fermi Level ◽  
Deep Level ◽  
Antisite Defect ◽  
Shallow Donor ◽  
Epr Spectrum ◽  
Paramagnetic Resonance ◽  
Line Intensities ◽  
Donor And Acceptor ◽  
Recombination Processes ◽  
Deep Donor

ABSTRACTPhoto-Electron Paramagnetic Resonance (photo-EPR) measurements of semi-insulating (s.-i.) 4H SiC have been made at 37 GHz including photo excitation and photo quenching techniques in the temperature interval from 77 K to 50 K. At T = 77 K in the dark the EPR spectrum consists of a low intensity line due to boron on the cubic lattice site and a single line with isotropic g∥ = g⊥ = 2.0025 due to a carbon-related surface defect. During illumination with ultraviolet light the EPR lines of hexagonal boron and cubic nitrogen appear in the EPR spectrum and persist after the illumination is removed. Subsequent illumination of the sample with sub-band gap, visible, light resulted in the quenching of the EPR lines from nitrogen and appearance of the IP1EPR line with g∥ = 2.0048, g⊥ = 2.0030 caused by direct transfer of electrons from nitrogen donor to the P1 center. The lifetime of the photo-generated carriers trapped by the P1 centers is found to be more than 15- 20 hours after the photo-excitation was turned off. The deep donor P1 local center is suggested to be the as yet unidentified deep level located at EC – 1.1 eV which pins the Fermi level in this sample at this energy in the dark. As the temperature is lowered from 77K and the quasi Fermi level positions reach shallow donor and acceptor states, an additional EPR line, ID, with g∥ = 2.0063, g⊥ = 2.0006, appears at 50 K in the excitation EPR spectrum and is attributed to the antisite defect Si−c with an energy level shallower than nitrogen. At the same time the ratio of the photo-excited EPR line intensities responsible for boron on the cubic and hexagonal sites, IkB:IhB, returns to the value observed at 77 K and becomes equal to 0.4 at 50 K, showing that the concentration of boron in the hexagonal site is higher than on the cubic site.

Microstructural characterization of plasma-processed Ti-Al metal matrix composites

1989 ◽  
Vol 47 ◽  
pp. 552-553
Author(s):  
M. G. Burke ◽  
M. N. Gungor ◽  
M. A. Burke
Keyword(s):  
High Temperature ◽  
Titanium Aluminide ◽  
Plasma Processing ◽  
Microstructural Characterization ◽  
High Temperature Strength ◽  
Matrix Composites ◽  
Intermetallic Matrix ◽  
Long Time ◽  
Strength And Stiffness ◽  
Intermetallic Matrix Composites

Intermetallic matrix composites are candidates for ultrahigh temperature service when light weight and high temperature strength and stiffness are required. Recent efforts to produce intermetallic matrix composites have focused on the titanium aluminide (TiAl) system with various ceramic reinforcements. In order to optimize the composition and processing of these composites it is necessary to evaluate the range of structures that can be produced in these materials and to identify the characteristics of the optimum structures. Normally, TiAl materials are difficult to process and, thus, examination of a suitable range of structures would not be feasible. However, plasma processing offers a novel method for producing composites from difficult to process component materials. By melting one or more of the component materials in a plasma and controlling deposition onto a cooled substrate, a range of structures can be produced and the method is highly suited to examining experimental composite systems. Moreover, because plasma processing involves rapid melting and very rapid cooling can be induced in the deposited composite, it is expected that processing method can avoid some of the problems, such as interfacial degradation, that are associated with the relatively long time, high temperature exposures that are induced by conventional processing methods.

UNS N06455

Alloy Digest ◽  
1989 ◽  
Vol 38 (1) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Corrosion Cracking ◽  
Temperature Stability ◽  
Heat Treating ◽  
High Ductility ◽  
High Temperature Stability ◽  
Nickel Chromium ◽  
Long Time ◽  
Resistance To Stress

Abstract UNS NO6455 is a nickel-chromium-molybdenum alloy with outstanding high-temperature stability as shown by high ductility and corrosion resistance even after long-time aging in the range 1200-1900 F. The alloy also has excellent resistance to stress-corrosion cracking and to oxidizing atmospheres up to 1900 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-367. Producer or source: Nickel and nickel alloy producers.

UNS R54620

Alloy Digest ◽  
1987 ◽  
Vol 36 (7) ◽  
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Time Use ◽  
Temperature Stability ◽  
High Strength ◽  
Heat Treating ◽  
High Temperature Stability ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Long Time

Abstract UNS No. R54620 is an alpha-beta titanium alloy. It has an excellent combination of tensile strength, creep strength, toughness and high-temperature stability that makes it suitable for service to 1050 F. It is recommended for use where high strength is required. It has outstanding advantages for long-time use at temperatures to 800 F. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and bend strength as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ti-86. Producer or source: Titanium alloy mills.

Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer

2006 ◽  
Vol 100 (12) ◽  
pp. 123101 ◽  
Author(s):  
Q. Sun ◽  
H. Wang ◽  
D. S. Jiang ◽  
R. Q. Jin ◽  
Y. Huang ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
High Temperature ◽  
Deep Level

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

The second phases in Ti40 burn resistant alloy after high temperature exposure for a long time

2002 ◽  
Vol 333 (1-2) ◽  
pp. 165-169 ◽  
Author(s):  
Y.Q Zhao ◽  
H.L Qu ◽  
K.Y Zhu ◽  
H Wu ◽  
C.L Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Exposure ◽  
Resistant Alloy ◽  
Long Time ◽  
Second Phases ◽  
Temperature Exposure

scholarly journals 1. On Galvanic Polarisation

1882 ◽  
Vol 11 ◽  
pp. 202-204
Author(s):  
Helmholtz
Keyword(s):  
Electrolytic Cell ◽  
Motive Force ◽  
Long Duration ◽  
Long Time ◽  
Electro Motive Force ◽  
A Current

In 1872 I wrote a paper on galvanic currents, which continue for a long time in an electrolytic cell, under the influence of an electro-motive force, too feeble to effect electrolytic decomposition. I tried at that time to prove that the long duration of these currents was caused by oxygen dissolved in the water of the electrolyte, combining with the hydrogen, which is carried by the electrolytic motion to the cathode. So the oxygen, which existed formerly near the surface of the cathode, is taken away, and instead of it the same amount of oxygen is liberated at the anode. This can return by diffusion to the cathode, and so the same action can go on without end. It appears as a current producing no electrolytic action. I called it “Electrolytic convection.”

Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Fengyan Zhang ◽  
Sheng Teng Hsu ◽  
Jer-shen Maa ◽  
Yoshi Ono ◽  
Ying Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Gate Oxide ◽  
Ferroelectric Material ◽  
High Temperature Stability ◽  
Material Deposition ◽  
Long Time ◽  
The Stability ◽  
Thin Gate Oxide

AbstractIr-Ta-O composite bottom electrode has extraordinary high temperature stability. It can maintain good conductivity and integrity even after 5min annealing at 1000 °C in oxygen ambient. The thermal stability of Ir-Ta-O on different substrates has been studied. It shows that Ir-Ta-O is also very stable on Si and SiO2 substrates. No hillock formation and peelings of the bottom electrode were observed after high temperature and long time annealing in O2 ambient. SEM, TEM, XRD, and AES have been used to characterize the Ir-Ta-O film and the interfaces between Ir-Ta-O bottom electrode and Si or SiO2 substrate. The composition and conductivity changes of the electrode during oxygen ambient annealing and the interdiffusion issue will be discussed. Furthermore, Ir-Ta-O/SiO2/Si capacitor with 30Å gate oxide was fabricated and the C-V and I-V characteristics were measured to confirm the stability of Ir-Ta-O on thin gate oxide.

Preparation of Refractory Castable for High-Temperature Zone of the Alumina Kiln

2011 ◽  
Vol 217-218 ◽  
pp. 1229-1234
Author(s):  
Xin Xin Cao ◽  
Jian Guo Liao ◽  
Xiao Fang He ◽  
Ling Li Zhu ◽  
Rui Na Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Service Life ◽  
Environmental Pollution ◽  
Refractory Lining ◽  
Orthogonal Test ◽  
Actual Situation ◽  
Temperature Zone ◽  
Long Time ◽  
New Formula ◽  
Short Working

The cChromic shaped bricks have been used as the refractory lining in alumina kiln for long time, whose service life is about 120~250 days. Besides the short working time, the environmental pollution led to by the chromic component is also serious. In this thesispaper (thesis 是硕士论文), some materials are were chosen based on the actual situation of the usage of the refractory lining in the current alumina kiln. The choosing principals are were the extensive source and the relatively low price. Finally, a new formula of the refractory castable is was acquired based on the orthogonal test and has passed the properties testing.

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