Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements

2002 ◽  
Author(s):  
Y.H. Goh ◽  
C.H. Ling
Keyword(s):  
Drain Current ◽  
Degradation Study ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

scholarly journals Modeling of hot-carrier degradation based on thorough carrier transport treatment

2014 ◽  
Vol 27 (4) ◽  
pp. 479-508 ◽  
Author(s):  
Stanislav Tyaginov ◽  
Yannick Wimmer ◽  
Tibor Grasser
Keyword(s):  
Electron Scattering ◽  
Carrier Transport ◽  
Drain Current ◽  
Boltzmann Transport ◽  
Hot Carrier ◽  
Statistical Fluctuations ◽  
Channel Gate ◽  
Current Change ◽  
Hot Carrier Degradation

We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.

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