WA-A3 a Schottky collector transistor switch with merged vertical n-p-n load

1979 ◽  
Vol 26 (11) ◽  
pp. 1847-1848
Author(s):  
F. Hewlett
Keyword(s):  
2001 ◽  
Vol 72 (9) ◽  
pp. 3718-3720 ◽  
Author(s):  
C. J. Dedman ◽  
E. H. Roberts ◽  
S. T. Gibson ◽  
B. R. Lewis

Nature ◽  
2013 ◽  
Vol 498 (7453) ◽  
pp. 149-149
Author(s):  
Devin Powell
Keyword(s):  

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3033 ◽  
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained.


2011 ◽  
Vol 201-203 ◽  
pp. 931-935
Author(s):  
Hai Lang Liu ◽  
Rui Bin Zhang ◽  
Ping Yang

The conventional PWM converter topologies limit the operation to lower switching frequencies because of the minimum ON-time of the transistor switch. The quadratic feature is interesting for application where a wide voltage range is necessary, a quadratic buck-boost converter is presented. The converter cell is showed, the quadratic buck converter with the converter cell can convert to the quadratic buck-boost converter without increasing elements.


2018 ◽  
Vol 7 (1) ◽  
pp. 49-52
Author(s):  
N. M. Mahesh Gowda ◽  
S. S. Parthasarathy

This paper presents a selection of inductor and snubber capacitor in non-isolated synchronous DC-DC switching power converter. The circuit is made to operate in Synchronous Discontinuous Conduction Mode (SDCM)/Forced Continuous Conduction Mode (FCCM) of operation for minimum inductor value, to reduce the size, weight and cost of the converter. The turn off loss of the switch induced by SDCM of operation is minimized by connecting snubber capacitor across the transistor switch. Before the switch is turned ON, snubber capacitor requires certain amount of energy must be stored in the inductor to discharge the capacitor energy [1]. The question is how much capacitor and inductor value is required. A series of MATLAB script are executed to find minimum inductor value for FCCM of operation and to select snubber capacitor for maximum efficiency. Complementary gate signals are used to control the ON and OFF of main and auxiliary switch. SDCM of operation due to complementary control gate signal scheme, minimum turn on loss of the transistor switch and low diode reverse recovery loss are achieved. Thus the Zero Voltage Resonant Transition (ZVRT) of transistor switch is realized, both turn on and turn off loss is minimized and also removes the parasitic ringing in inductor current.


2021 ◽  
Vol 2086 (1) ◽  
pp. 012049
Author(s):  
V G Tikhomirov ◽  
Yu V Solov’ev ◽  
A G Gudkov ◽  
M K Popov ◽  
S V Chizhikov

Abstract Modern medical microwave diagnostic equipment requires the application of solutions related to the compactness of the developed devices and high performance. Ensuring these requirements is possible by using a modern semiconductor component base based on A3B5 compounds. One of the promising materials for this purpose is gallium nitride. The paper presents the design and manufacturing technology of one of the main control elements of the microwave signal in microwave radiothermometer - monolithic AlGaN/GaN/SiC HEMT SPDT transistor switch.


1981 ◽  
Vol 25 (3) ◽  
pp. 126-134 ◽  
Author(s):  
J. A. Dorler ◽  
J. M. Mosley ◽  
G. A. Ritter ◽  
R. O. Seeger ◽  
J. R. Struk

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