A Sub-1 ppm/°C Bandgap Voltage Reference With High-Order Temperature Compensation in 0.18-μm CMOS Process

2022 ◽  
pp. 1-9
Author(s):  
Shalin Huang ◽  
Mingdong Li ◽  
Huan Li ◽  
Peng Yin ◽  
Zhou Shu ◽  
...  
Keyword(s):  
Temperature Compensation ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Bandgap Voltage Reference

A High-Order CMOS Bandgap Voltage Reference

2014 ◽  
Vol 989-994 ◽  
pp. 1165-1168
Author(s):  
Qian Neng Zhou ◽  
Yun Song Li ◽  
Jin Zhao Lin ◽  
Hong Juan Li ◽  
Chen Li ◽  
...  
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Power Supply Voltage ◽  
Power Supply Rejection Ratio ◽  
Voltage Deviation ◽  
Bandgap Voltage Reference

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

A High Order Curvature-Compensated Bandgap Voltage Reference with a Novel Error Amplifier

2017 ◽  
Vol 26 (09) ◽  
pp. 1750127 ◽  
Author(s):  
Gongyuan Zhao ◽  
Mao Ye ◽  
Yiqiang Zhao ◽  
Kai Hu ◽  
Ruishan Xin
Keyword(s):  
Monte Carlo Simulation ◽  
Power Supply ◽  
Supply Voltage ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Error Amplifier ◽  
Bandgap Voltage Reference ◽  
Simulation Results

This paper presents a bandgap voltage reference (BGR), utilizing high order curvature-compensated technique with the temperature dependent resistor. Based on an improved error amplifier, [Formula: see text]80[Formula: see text]dB power supply rejection (PSR) @1[Formula: see text]kHz is achieved without additional complicated circuits. The circuit is fabricated in a standard [Formula: see text]m CMOS process, consuming 50[Formula: see text][Formula: see text]A at 25[Formula: see text]C with a supply voltage of 3.3[Formula: see text]V. Simulation results show that the proposed BGR can achieve a temperature coefficient as low as 1.18[Formula: see text]ppm/[Formula: see text]C over the temperature range from [Formula: see text]C to 120[Formula: see text]C. Monte Carlo simulation and Experimental Results validate the design.

An Integrated Ramp Generator for PWM Voltage Regulators

2014 ◽  
Vol 644-650 ◽  
pp. 3682-3685
Author(s):  
Xiao Zong Huang ◽  
Lun Cai Liu ◽  
Wen Gang Huang ◽  
Jun Luo ◽  
Dong Mei Zhu
Keyword(s):  
Power Supply ◽  
Temperature Compensation ◽  
Output Voltage ◽  
Voltage Regulators ◽  
Frequency Variation ◽  
Cmos Process ◽  
Voltage Reference ◽  
Zener Diode ◽  
Ramp Generator ◽  
Bandgap Voltage Reference

An integrated ramp generator is presented in this paper. For traditional implementations, the amplitude clamp is realized with zener diode to limit the output voltage to ±VZ, while the zener diode is not available for standard CMOS process. The transmission gate is utilized to make the output voltage in the determined range. The reference voltage is provided by a bandgap voltage reference with temperature compensation, which guarantees the temperature stabilization of the frequency of the ramp generator. The ramp generator was fabricated in a commercial CMOS process. The frequency of 44kHz is achieved under the power supply of 3.5V, and the frequency variation of 41kH to 46kHz with the power supply of 3.3V to 5V.

Design of a High Performance CMOS Bandgap Voltage Reference

2014 ◽  
Vol 981 ◽  
pp. 90-93
Author(s):  
Yang Guang ◽  
Bin Yu ◽  
Huang Hai
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Circuit Simulation ◽  
Absolute Temperature ◽  
Reference Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Changes ◽  
Bandgap Voltage Reference ◽  
Protection Circuit

Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

A New Sub-1 Volt 17ppm/°C Offset-Insensitive Resistorless Switched-Capacitor Bandgap Voltage Reference

2020 ◽  
pp. 2150029
Author(s):  
Emad Ebrahimi ◽  
Maliheh Arabnasery
Keyword(s):  
Process Variations ◽  
Voltage Divider ◽  
Cmos Technology ◽  
Reference Voltage ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Voltage Reference ◽  
Op Amp ◽  
Offset Voltage ◽  
Bandgap Voltage Reference

A new PVT compensated voltage reference is presented by using switched-capacitor (S.C.) technique. In the proposed bandgap voltage reference (BGR), a p–n junction is biased with different currents during two different phases and required PTAT and CTAT voltages generated and held by two capacitors. Using a capacitive voltage divider, the PTAT voltage is weighted such that the sub-1V bandgap voltage is achievable. In order to cancel the effect of op-amp offset and to relax the design of op-amp, the offset voltage of the op-amp is sampled by a capacitor during a specified phase and inversely is added to the final bandgap voltage in next phase. The analysis of the proposed S.C. BGR is supplemented by simulation of a 0.5-V BGR with 28[Formula: see text][Formula: see text][Formula: see text]W power consumption in a standard 0.18[Formula: see text][Formula: see text][Formula: see text]m CMOS technology. Simulation results show that the average temperature coefficient of the S.C. BGR is 17[Formula: see text]ppm/∘C and it is robust against the process variations. Applying an arbitrary 100-mV op-amp offset results in a lower than 1.1[Formula: see text]mV deviation in generated reference voltage. Due to the better matching of MIM capacitors in CMOS process (rather than resistors used in conventional BGR) the proposed S.C. bandgap provides good accuracy without any post trimming. Monte–Carlo analysis shows that [Formula: see text]/[Formula: see text] of the generated reference voltage is as low as 0.7%. The sensitivity of the proposed BGR to supply variation is also less than 1%/V.

DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT

2014 ◽  
Vol 23 (08) ◽  
pp. 1450107 ◽  
Author(s):  
JUN-DA CHEN ◽  
CHENG-KAI YE
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Range ◽  
Wide Range ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Cmos Voltage Reference

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

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