A New Sub-1 Volt 17ppm/°C Offset-Insensitive Resistorless Switched-Capacitor Bandgap Voltage Reference

2020 ◽  
pp. 2150029
Author(s):  
Emad Ebrahimi ◽  
Maliheh Arabnasery
Keyword(s):  
Process Variations ◽  
Voltage Divider ◽  
Cmos Technology ◽  
Reference Voltage ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Voltage Reference ◽  
Op Amp ◽  
Offset Voltage ◽  
Bandgap Voltage Reference

A new PVT compensated voltage reference is presented by using switched-capacitor (S.C.) technique. In the proposed bandgap voltage reference (BGR), a p–n junction is biased with different currents during two different phases and required PTAT and CTAT voltages generated and held by two capacitors. Using a capacitive voltage divider, the PTAT voltage is weighted such that the sub-1V bandgap voltage is achievable. In order to cancel the effect of op-amp offset and to relax the design of op-amp, the offset voltage of the op-amp is sampled by a capacitor during a specified phase and inversely is added to the final bandgap voltage in next phase. The analysis of the proposed S.C. BGR is supplemented by simulation of a 0.5-V BGR with 28[Formula: see text][Formula: see text][Formula: see text]W power consumption in a standard 0.18[Formula: see text][Formula: see text][Formula: see text]m CMOS technology. Simulation results show that the average temperature coefficient of the S.C. BGR is 17[Formula: see text]ppm/∘C and it is robust against the process variations. Applying an arbitrary 100-mV op-amp offset results in a lower than 1.1[Formula: see text]mV deviation in generated reference voltage. Due to the better matching of MIM capacitors in CMOS process (rather than resistors used in conventional BGR) the proposed S.C. bandgap provides good accuracy without any post trimming. Monte–Carlo analysis shows that [Formula: see text]/[Formula: see text] of the generated reference voltage is as low as 0.7%. The sensitivity of the proposed BGR to supply variation is also less than 1%/V.

Design of a High Performance CMOS Bandgap Voltage Reference

2014 ◽  
Vol 981 ◽  
pp. 90-93
Author(s):  
Yang Guang ◽  
Bin Yu ◽  
Huang Hai
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Circuit Simulation ◽  
Absolute Temperature ◽  
Reference Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Changes ◽  
Bandgap Voltage Reference ◽  
Protection Circuit

Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

3.48-nW 58.4ppm/∘C Sub-threshold CVR with Four Transistors and Two Resistors

2021 ◽  
Author(s):  
Mohammadreza Rasekhi ◽  
Emad Ebrahimi ◽  
Hamed Aminzadeh
Keyword(s):  
Process Variations ◽  
Mean Value ◽  
Absolute Temperature ◽  
Reference Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Ultra Low Power ◽  
Low Power Cmos ◽  
Simulation Results ◽  
Cmos Voltage Reference

In this paper, an ultra-low power CMOS voltage reference capable of operating at sub-1[Formula: see text]V input supply is proposed. Four transistors biased in weak inversion are used to generate the required complementary-to-absolute-temperature (CTAT) and proportional-to-absolute-temperature (PTAT) voltages of the proposed circuit. Self-biasing of nature of the proposed configuration in the form of operational amplifier (opamp)-free ensure nano-power operation and eliminate the need for lateral bipolar junction transistors (BJTs) and offset cancelation techniques. A prototype of the circuit is designed and simulated in a standard 0.18-[Formula: see text]m CMOS process. Post-layout simulation results show that the circuit generates a reference voltage of 494[Formula: see text]mV with temperature coefficient (TC) of 58.4[Formula: see text]ppm/∘C across [Formula: see text]C to 85∘C; while the consuming power is lowered to 3.48[Formula: see text]nW at the minimum supply of 0.8[Formula: see text]V. The line sensitivity is 0.7%/V for the supply voltages from 0.8[Formula: see text]V to 1.8[Formula: see text]V, whereas the power supply ripple rejection (PSRR) is [Formula: see text]49.06[Formula: see text]dB at 1[Formula: see text]Hz. Monte Carlo simulation results of the voltage reference show a mean value of 497.2[Formula: see text]mV with [Formula: see text]/[Formula: see text] of 1.7%, demonstrating the robustness of the generated reference voltage against the process variations and mismatch.

Resistorless switched‐capacitor bandgap voltage reference with low sensitivity to process variations

2013 ◽  
Vol 49 (23) ◽  
pp. 1448-1449 ◽  
Author(s):  
H. Klimach ◽  
A.L.T. Costa ◽  
M.F.C. Monteiro ◽  
S. Bampi
Keyword(s):  
Process Variations ◽  
Switched Capacitor ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Low Sensitivity

A 16.4 nW, Sub-1 V, Resistor-Less Voltage Reference with BJT Voltage Divider

2018 ◽  
Vol 27 (13) ◽  
pp. 1850206 ◽  
Author(s):  
Qingshan Yang ◽  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Divider ◽  
Total Power ◽  
Cmos Process ◽  
Operating Voltage ◽  
Voltage Reference ◽  
Ultra Low Power ◽  
Silicon Area ◽  
Total Power Consumption

A 16.4[Formula: see text]nW, sub-1[Formula: see text]V voltage reference for ultra-low power low voltage applications is proposed. This design reduces the operating voltage to 0.8[Formula: see text]V by a BJT voltage divider and decreases the silicon area considerably by eliminating resistors. The PTAT and CTAT are based on SCM structures and a scaled-down [Formula: see text], respectively, to improve the process insensitivity. This work is fabricated in 0.18[Formula: see text][Formula: see text]m CMOS process with a total area of 0.0033[Formula: see text]mm2. Measured results show that it works properly for supply voltage from 0.8[Formula: see text]V to 2[Formula: see text]V. The reference voltage is 467.2[Formula: see text]mV with standard deviation ([Formula: see text]) being 12.2 mV and measured TC at best is 38.7[Formula: see text]ppm/[Formula: see text]C ranging from [Formula: see text]C to 60[Formula: see text]C. The total power consumption is 16.4[Formula: see text]nW under the minimum supply voltage at 27[Formula: see text]C.

A High-Order CMOS Bandgap Voltage Reference

2014 ◽  
Vol 989-994 ◽  
pp. 1165-1168
Author(s):  
Qian Neng Zhou ◽  
Yun Song Li ◽  
Jin Zhao Lin ◽  
Hong Juan Li ◽  
Chen Li ◽  
...  
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Power Supply Voltage ◽  
Power Supply Rejection Ratio ◽  
Voltage Deviation ◽  
Bandgap Voltage Reference

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

scholarly journals Switched capacitor bandgap voltage reference for sub-1-V operation

2006 ◽  
Vol 3 (24) ◽  
pp. 529-533 ◽  
Author(s):  
Suheng Chen ◽  
Benjamin J. Blalock
Keyword(s):  
Switched Capacitor ◽  
Voltage Reference ◽  
Bandgap Voltage Reference

DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT

2014 ◽  
Vol 23 (08) ◽  
pp. 1450107 ◽  
Author(s):  
JUN-DA CHEN ◽  
CHENG-KAI YE
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Range ◽  
Wide Range ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Cmos Voltage Reference

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

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