An Integrated Ramp Generator for PWM Voltage Regulators

2014 ◽  
Vol 644-650 ◽  
pp. 3682-3685
Author(s):  
Xiao Zong Huang ◽  
Lun Cai Liu ◽  
Wen Gang Huang ◽  
Jun Luo ◽  
Dong Mei Zhu
Keyword(s):  
Power Supply ◽  
Temperature Compensation ◽  
Output Voltage ◽  
Voltage Regulators ◽  
Frequency Variation ◽  
Cmos Process ◽  
Voltage Reference ◽  
Zener Diode ◽  
Ramp Generator ◽  
Bandgap Voltage Reference

An integrated ramp generator is presented in this paper. For traditional implementations, the amplitude clamp is realized with zener diode to limit the output voltage to ±VZ, while the zener diode is not available for standard CMOS process. The transmission gate is utilized to make the output voltage in the determined range. The reference voltage is provided by a bandgap voltage reference with temperature compensation, which guarantees the temperature stabilization of the frequency of the ramp generator. The ramp generator was fabricated in a commercial CMOS process. The frequency of 44kHz is achieved under the power supply of 3.5V, and the frequency variation of 41kH to 46kHz with the power supply of 3.3V to 5V.

A High-Order CMOS Bandgap Voltage Reference

2014 ◽  
Vol 989-994 ◽  
pp. 1165-1168
Author(s):  
Qian Neng Zhou ◽  
Yun Song Li ◽  
Jin Zhao Lin ◽  
Hong Juan Li ◽  
Chen Li ◽  
...  
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Power Supply Voltage ◽  
Power Supply Rejection Ratio ◽  
Voltage Deviation ◽  
Bandgap Voltage Reference

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

A High Order Curvature-Compensated Bandgap Voltage Reference with a Novel Error Amplifier

2017 ◽  
Vol 26 (09) ◽  
pp. 1750127 ◽  
Author(s):  
Gongyuan Zhao ◽  
Mao Ye ◽  
Yiqiang Zhao ◽  
Kai Hu ◽  
Ruishan Xin
Keyword(s):  
Monte Carlo Simulation ◽  
Power Supply ◽  
Supply Voltage ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Error Amplifier ◽  
Bandgap Voltage Reference ◽  
Simulation Results

This paper presents a bandgap voltage reference (BGR), utilizing high order curvature-compensated technique with the temperature dependent resistor. Based on an improved error amplifier, [Formula: see text]80[Formula: see text]dB power supply rejection (PSR) @1[Formula: see text]kHz is achieved without additional complicated circuits. The circuit is fabricated in a standard [Formula: see text]m CMOS process, consuming 50[Formula: see text][Formula: see text]A at 25[Formula: see text]C with a supply voltage of 3.3[Formula: see text]V. Simulation results show that the proposed BGR can achieve a temperature coefficient as low as 1.18[Formula: see text]ppm/[Formula: see text]C over the temperature range from [Formula: see text]C to 120[Formula: see text]C. Monte Carlo simulation and Experimental Results validate the design.

A Novel Low Line Regulation Voltage Reference with No Amplifier

2018 ◽  
Vol 27 (10) ◽  
pp. 1850152 ◽  
Author(s):  
Qiang Li Li ◽  
WanLing Deng ◽  
Xiao Yu Ma ◽  
JunKai Huang
Keyword(s):  
Power Supply ◽  
Output Voltage ◽  
Power Supplies ◽  
Cmos Process ◽  
Voltage Reference ◽  
Bipolar Junction Transistor ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Junction Transistor ◽  
Simulation Results

A novel low line regulation voltage reference (VR) without an amplifier is presented in this paper. The design is achieved by subtracting two voltages which have the same temperature curves. All circuits use only one Bipolar Junction Transistor (BJT) to decrease the area greatly. Designed with the SMIC 0.18[Formula: see text][Formula: see text]m CMOS process, the simulation results show that the output voltage is 0.902[Formula: see text]V at TT process corner when the power supply is larger than 1.7[Formula: see text]V. The temperature coefficient (TC) is 3.6[Formula: see text]ppm/[Formula: see text]C to 7.4[Formula: see text]ppm/[Formula: see text]C at different power supplies and process corners. The simulated power supply rejection ratio (PSRR) is [Formula: see text]80[Formula: see text]dB at TT process corner when the power supply is 2.5[Formula: see text]V, and the PSRR at different process corners are almost the same. The line regulation of the proposed circuit is 0.005[Formula: see text]mV/V.

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

Design of a High Performance CMOS Bandgap Voltage Reference

2014 ◽  
Vol 981 ◽  
pp. 90-93
Author(s):  
Yang Guang ◽  
Bin Yu ◽  
Huang Hai
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Circuit Simulation ◽  
Absolute Temperature ◽  
Reference Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Changes ◽  
Bandgap Voltage Reference ◽  
Protection Circuit

Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

A New Sub-1 Volt 17ppm/°C Offset-Insensitive Resistorless Switched-Capacitor Bandgap Voltage Reference

2020 ◽  
pp. 2150029
Author(s):  
Emad Ebrahimi ◽  
Maliheh Arabnasery
Keyword(s):  
Process Variations ◽  
Voltage Divider ◽  
Cmos Technology ◽  
Reference Voltage ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Voltage Reference ◽  
Op Amp ◽  
Offset Voltage ◽  
Bandgap Voltage Reference

A new PVT compensated voltage reference is presented by using switched-capacitor (S.C.) technique. In the proposed bandgap voltage reference (BGR), a p–n junction is biased with different currents during two different phases and required PTAT and CTAT voltages generated and held by two capacitors. Using a capacitive voltage divider, the PTAT voltage is weighted such that the sub-1V bandgap voltage is achievable. In order to cancel the effect of op-amp offset and to relax the design of op-amp, the offset voltage of the op-amp is sampled by a capacitor during a specified phase and inversely is added to the final bandgap voltage in next phase. The analysis of the proposed S.C. BGR is supplemented by simulation of a 0.5-V BGR with 28[Formula: see text][Formula: see text][Formula: see text]W power consumption in a standard 0.18[Formula: see text][Formula: see text][Formula: see text]m CMOS technology. Simulation results show that the average temperature coefficient of the S.C. BGR is 17[Formula: see text]ppm/∘C and it is robust against the process variations. Applying an arbitrary 100-mV op-amp offset results in a lower than 1.1[Formula: see text]mV deviation in generated reference voltage. Due to the better matching of MIM capacitors in CMOS process (rather than resistors used in conventional BGR) the proposed S.C. bandgap provides good accuracy without any post trimming. Monte–Carlo analysis shows that [Formula: see text]/[Formula: see text] of the generated reference voltage is as low as 0.7%. The sensitivity of the proposed BGR to supply variation is also less than 1%/V.

Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

2011 ◽  
Vol 679-680 ◽  
pp. 754-757 ◽  
Author(s):  
Viorel Banu ◽  
Phillippe Godignon ◽  
Xavier Jordá ◽  
Mihaela Alexandru ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Bipolar Diodes ◽  
Stable Voltage ◽  
Temperature Applications

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

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