Online Calculation of the Increase in Thermal Resistance Caused by Solder Fatigue for IGBT Modules

2017 ◽  
Vol 17 (4) ◽  
pp. 785-794 ◽  
Author(s):  
Zhen Hu ◽  
Mingxing Du ◽  
Kexin Wei
Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 194
Author(s):  
Dan Luo ◽  
Minyou Chen ◽  
Wei Lai ◽  
Hongjian Xia ◽  
Xueni Ding ◽  
...  

Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.


2017 ◽  
Vol 24 (3) ◽  
pp. 141-150 ◽  
Author(s):  
Zhen Hu ◽  
Mingxing Du ◽  
Kexin Wei

Author(s):  
Kisho Ashida ◽  
Akira Muto ◽  
Ichio Shimizu ◽  
Kenya Kawano ◽  
Naotaka Tanaka ◽  
...  

We developed a new packaging technology, one that uses double-sided cooling to dramatically reduce the on-resistance and thermal resistance. The main features of this technology are as follows. Both sides of the chip are soldered to copper leadframes. After that, copper leadframes soldered to the top and bottom of the chip are exposed when transfer molding encapsulates the package. There were two development problems with packaging technology. The first is how to prevent chip crack in the reflow process. The second is how to improve the fatigue life of solder during the temperature cycling. To solve these problems, we designed our package structure using an experimental design method. In particular, for the second problem, we quantitatively calculated the amount of solder fatigue fracture and the number of cycles using the solder crack propagation analysis method, because the performance of the package depends on the amount of solder fatigue fracture. As a result, we could create a condition that prevented chip crack and improved the fatigue life of solder by the twice compared to the first prototype and determined the optimum structure. We assembled a new package based on this optimum structure, and confirmed this improvement of the reliability. In addition, we measured the on-resistance and thermal resistance of this package and that of the existing package available. We found that the new package’s on-resistance and thermal resistance decreased to about 70 and 80% that of the existing package respectively.


2008 ◽  
Vol 59 ◽  
pp. 143-147
Author(s):  
Svetlana Levchuk ◽  
Monika Poebl ◽  
Gerhard Mitic

In view of power electronics applications, baseplates made from metal diamond composites have been manufactured and characterised. The surface contours of the baseplates were measured during thermal loads up to 180°C starting at room temperature with help of the TherMoiré technique. X-ray analysis investigation was performed to detect porosity and local inhomogeneities of the baseplates. Al- and Cu-based diamond composite baseplates were Ni-plated and used for manufacturing of 3.3 kV IGBT modules. The solder layer between AlN AMB (active metal brazing) substrates and baseplates was investigated by ultrasonic and X-Ray analyses. Thermal resistance of the manufactured IGBT modules was characterised and compared to that of IGBT modules with AlSiC or Cu baseplates. The influence of thermal cycling on the solder layer and thermal resistance of the manufactured module was investigated.


2015 ◽  
Vol 30 (3) ◽  
pp. 1535-1543 ◽  
Author(s):  
Bing Ji ◽  
Xueguan Song ◽  
Wenping Cao ◽  
Volker Pickert ◽  
Yihua Hu ◽  
...  

2017 ◽  
Vol 79 ◽  
pp. 248-256 ◽  
Author(s):  
Erping Deng ◽  
Zhibin Zhao ◽  
Peng Zhang ◽  
Jinyuan Li ◽  
Yongzhang Huang

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