scholarly journals Low-Cost Broadband Electronic Coupler for Estimation of Radiated Emission of Integrated Circuits in TEM Cell

2020 ◽  
pp. 1-10
Author(s):  
Alexandre Boyer ◽  
Sonia Ben Dhia
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Tem Cell ◽  
Radiated Emission

scholarly journals In-Plane Monolithic Integration of Scaled III-V Photonic Devices

2021 ◽  
Vol 11 (4) ◽  
pp. 1887
Author(s):  
Markus Scherrer ◽  
Noelia Vico Triviño ◽  
Svenja Mauthe ◽  
Preksha Tiwari ◽  
Heinz Schmid ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Photonic Devices ◽  
Monolithic Integration ◽  
Light Emitters ◽  
Fully Integrated ◽  
Large Lattice ◽  
Hybrid Iii ◽  
Gain Material

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.

scholarly journals A Survey of NFC Sensors Based on Energy Harvesting for IoT Applications

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3746 ◽  
Author(s):  
Antonio Lazaro ◽  
Ramon Villarino ◽  
David Girbau
Keyword(s):  
Energy Harvesting ◽  
Integrated Circuits ◽  
Radio Frequency Identification ◽  
Low Cost ◽  
Near Field ◽  
Wearable Sensors ◽  
Cold Chain ◽  
Iot Applications ◽  
Wide Range ◽  
Frequency Identification

In this article, an overview of recent advances in the field of battery-less near-field communication (NFC) sensors is provided, along with a brief comparison of other short-range radio-frequency identification (RFID) technologies. After reviewing power transfer using NFC, recommendations are made for the practical design of NFC-based tags and NFC readers. A list of commercial NFC integrated circuits with energy-harvesting capabilities is also provided. Finally, a survey of the state of the art in NFC-based sensors is presented, which demonstrates that a wide range of sensors (both chemical and physical) can be used with this technology. Particular interest arose in wearable sensors and cold-chain traceability applications. The availability of low-cost devices and the incorporation of NFC readers into most current mobile phones make NFC technology key to the development of green Internet of Things (IoT) applications.

Quality Issues in Personalized E-Health, Mobile Health and E-Health Grids

2011 ◽  
pp. 118-131 ◽  
Author(s):  
Anastasia N. Kastania ◽  
Sophia Kossida
Keyword(s):  
Health Care ◽  
Integrated Circuits ◽  
Health Management ◽  
Low Cost ◽  
Modern Society ◽  
Public Health Care ◽  
Smart Sensors ◽  
Grid Middleware ◽  
Rigorous Testing ◽  
Personalized Health

The electronic healthcare in the modern society has the possibility of converting the practice of delivery of health care. Currently, chaos of information is characterizing the public health care, which leads to inferior decision-making, increasing expenses and even loss of lives. Technological progress in the sensors, integrated circuits, and the wireless communications have allowed designing low cost, microscopic, light, and smart sensors. These smart sensors are able to feel, transport one or more vital signals, and they can be incorporated in wireless personal or body networks for remote health monitoring. Sensor networks promise to drive innovation in health care allowing cheap, continuous, mobile and personalized health management of electronic health records with the Internet. The e-health applications imply an exciting set of requirements for Grid middleware and provide a rigorous testing ground for Grid. In the chapter, the authors present an overview of the current technological achievements in the electronic healthcare world combined with an outline of the quality dimensions in healthcare.

scholarly journals Avalanches and criticality in self-organized nanoscale networks

2019 ◽  
Vol 5 (11) ◽  
pp. eaaw8438 ◽  
Author(s):  
J. B. Mallinson ◽  
S. Shirai ◽  
S. K. Acharya ◽  
S. K. Bose ◽  
E. Galli ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Law ◽  
Low Cost ◽  
Reservoir Computing ◽  
Critical Dynamics ◽  
Computational Approaches ◽  
Self Organized ◽  
Computational Performance ◽  
The Brain ◽  
Regular Arrays

Current efforts to achieve neuromorphic computation are focused on highly organized architectures, such as integrated circuits and regular arrays of memristors, which lack the complex interconnectivity of the brain and so are unable to exhibit brain-like dynamics. New architectures are required, both to emulate the complexity of the brain and to achieve critical dynamics and consequent maximal computational performance. We show here that electrical signals from self-organized networks of nanoparticles exhibit brain-like spatiotemporal correlations and criticality when fabricated at a percolating phase transition. Specifically, the sizes and durations of avalanches of switching events are power law distributed, and the power law exponents satisfy rigorous criteria for criticality. These signals are therefore qualitatively and quantitatively similar to those measured in the cortex. Our self-organized networks provide a low-cost platform for computational approaches that rely on spatiotemporal correlations, such as reservoir computing, and are an important step toward creating neuromorphic device architectures.

Multi-Layer Photopolymer Micromachining

2005 ◽  
Vol 872 ◽  
Author(s):  
J. R. Huang ◽  
B. Bai ◽  
J. Shaw ◽  
T. N. Jackson ◽  
C. Y. Wei ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Low Cost ◽  
Solution Process ◽  
Microfluidic Channel ◽  
Width Ratio ◽  
Large Area ◽  
Additive Process ◽  
Infiltration Process

AbstractThis paper presents a novel method to create and integrate micro-machined devices and high aspect-ratio (height-to-width ratio) microstructures in which the microstructures are built up using multiple layers of photopolymer film and/or viscous solution. Very high aspect-ratio 2-and 3-dimensional (2-D and 3-D) microstructures were constructed by stacking photo-imageable polymer films. Such films may be dry films applied by lamination or solution layers applied by bar coating, or doctor blade coating. Photolithography is used in both cases to define the microstructure. This additive process of thin-film micromachining facilitates high aspect-ratio microstructure fabrication. We have demonstrated structures of up to 12-layers comprising 2-D arrays of deep trenches (180 μm deep and 25 μm wide) and a 2-layer SU-8 micro-trench array with an aspect ratio up to 36 on glass substrates. Miniaturized structures of interconnected reservoirs as small as 50 μm × 50 μm × 15 μm (∼38 pico liter storage capacity) are also being fabricated, along with a novel 5-layer microfluidic channel array and a vacuum-infiltration process for fluid manipulation. This method has the potential to create functional large-area micro-devices at low-cost and with increased device flexibility, durability, prototyping speed, and reduced process complexity for applications in optoelectronics, integrated detectors, and bio-devices. The novel multi-layer photopolymer dry film and solution process also allows microstructures in micro-electro-mechanical systems (MEMS) to be built with ease and provides the functionality of MEMS integration with electronic devices and integrated circuits (ICs).

scholarly journals A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 236 ◽  
Author(s):  
Wonseok Choe ◽  
Jinho Jeong
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Low Cost ◽  
Three Dimensional ◽  
Equivalent Circuit Model ◽  
Dipole Antenna ◽  
Impedance Match ◽  
Inp Substrate ◽  
On Chip ◽  
High Dielectric

A waveguide-to-microstrip transition is an essential component for packaging integrated circuits (ICs) in rectangular waveguides, especially at millimeter-wave and terahertz (THz) frequencies. At THz frequencies, the on-chip transitions, which are monolithically integrated in ICs are preferred to off-chip transitions, as the former can eliminate the wire-bonding process, which can cause severe impedance mismatch and additional insertion loss of the transitions. Therefore, on-chip transitions can allow the production of low cost and repeatable THz modules. However, on-chip transitions show limited performance in insertion loss and bandwidth, more seriously, this is an in-band resonance issue. These problems are mainly caused by the substrate used in the THz ICs, such as an indium phosphide (InP), which exhibits a high dielectric constant, high dielectric loss, and high thickness, compared with the size of THz waveguides. In this work, we propose a broadband THz on-chip transition using a dipole antenna with an integrated balun in the InP substrate. The transition is designed using three-dimensional electromagnetic (EM) simulations based on the equivalent circuit model. We show that in-band resonances can be induced within the InP substrate and also prove that backside vias can effectively eliminate these resonances. Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.

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