Effect of Topographical Feature Size on the Trend of Cell Behaviors

2018 ◽  
Vol 17 (3) ◽  
pp. 377-380 ◽  
Author(s):  
Hong Nam Kim ◽  
Jangho Kim
Author(s):  
Peter Egger ◽  
Stefan Müller ◽  
Martin Stiftinger

Abstract With shrinking feature size of integrated circuits traditional FA techniques like SEM inspection of top down delayered devices or cross sectioning often cannot determine the physical root cause. Inside SRAM blocks the aggressive design rules of transistor parameters can cause a local mismatch and therefore a soft fail of a single SRAM cell. This paper will present a new approach to identify a physical root cause with the help of nano probing and TCAD simulation to allow the wafer fab to implement countermeasures.


2021 ◽  
Vol 9 (13) ◽  
pp. 3032-3037
Author(s):  
Hongye Hao ◽  
Junjie Huang ◽  
Ping Liu ◽  
Yunfan Xue ◽  
Jing Wang ◽  
...  

Microarrays with biochemistry gradients were rapidly fabricated via light-induced thiol–ene “click” chemistry and showed great applicability in cell behaviors screening.


2021 ◽  
Vol 27 (54) ◽  
pp. 13480-13480
Author(s):  
Maxime Tricoire ◽  
Luca Münzfeld ◽  
Jules Moutet ◽  
Nolwenn Mahieu ◽  
Léo La Droitte ◽  
...  
Keyword(s):  

2021 ◽  
Vol 17 (1) ◽  
Author(s):  
Bing Wang ◽  
Xiao-li Zhang ◽  
Chen-xi Li ◽  
Ning-ning Liu ◽  
Min Hu ◽  
...  

Abstract Background Oral cancer is a malignant disease that threatenshuman life and greatly reducespatientquality of life. ANLN was reported to promote the progression of cancer. This study aims to investigate the role of ANLNin oral cancer and the underlying molecular mechanism. Methods ANLN expression was downregulated by RNAi technology. The effect of ANLN on cell behaviors, including proliferation, cell cycle progression, invasion, and apoptosis, was detected. Western blotting analysis was used to explore the mechanism by whichANLN functions in oral cancer. Results Data from TCGA database showed that ANLN was expressed at significantly higher levels in tumor tissues thanin normal control tissues. Patients with higher ANLN expression exhibitedshorter survivaltimes. ANLN was alsoabundantly expressedin the cancer cell lines CAL27 and HN30. When ANLN was knocked down in CAL27 and HN30 cells, cell proliferation and colony formation weredecreased. The cell invasion ability was also inhibited. However, the cell apoptosis rate was increased. In addition, the levels of critical members of the PI3K signaling pathway, includingPI3K, mTOR, Akt, and PDK-1, were significantlyreducedafter ANLN was knocked down in CAL27 cells. Conclusions ANLN contributes to oral cancerprogressionand affects activation ofthe PI3K/mTOR signaling pathway. This study providesa new potential targetfor drug development and treatment in oral cancer.


Metals ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 275 ◽  
Author(s):  
Huixia Liu ◽  
Wenhao Zhang ◽  
Jenn-Terng Gau ◽  
Zongbao Shen ◽  
Youjuan Ma ◽  
...  

2012 ◽  
Vol 195 ◽  
pp. 128-131 ◽  
Author(s):  
Hun Hee Lee ◽  
Min Sang Yun ◽  
Hyun Wook Lee ◽  
Jin Goo Park

As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.


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