Effect of Electron Radiation on Silicon Nitride Insulated Gate Field Effect Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1967.4324809 ◽

1967 ◽

Vol 14 (6) ◽

pp. 293-298 ◽

Author(s):

Phillip A. Newman ◽

H. A. R. Wegener

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Radiation

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Amorphous-silicon silicon-nitride field-effect transistors

Electronics Letters ◽

10.1049/el:19820411 ◽

1982 ◽

Vol 18 (14) ◽

pp. 599 ◽

Author(s):

K. Katoh ◽

M. Yasui ◽

H. Watanabe

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Silicon

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Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

IEEE Transactions on Electron Devices ◽

10.1109/16.987102 ◽

2002 ◽

Vol 49 (3) ◽

pp. 343-353 ◽

Author(s):

K. Remashan ◽

K.N. Bhat

Keyword(s):

Gallium Arsenide ◽

Silicon Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

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Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

Nanotechnology ◽

10.1088/1361-6528/ab3ce2 ◽

2019 ◽

Vol 30 (48) ◽

pp. 485201

Author(s):

Heyi Li ◽

Chaoming Liu ◽

Yanqing Zhang ◽

Chunhua Qi ◽

Yidan Wei ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Radiation Effects ◽

Field Effect Transistors ◽

Electron Radiation ◽

Structural And Electrical Properties

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Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETs) Packaged in Plastic Mold

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.l1391 ◽

2003 ◽

Vol 42 (Part 2, No. 11B) ◽

pp. L1391-L1393 ◽

Author(s):

Yoshihiro Saito ◽

Yasuhiro Tosaka ◽

Shigeru Nakajima

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

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Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1320847 ◽

2000 ◽

Vol 77 (18) ◽

pp. 2855-2857 ◽

Author(s):

Anri Nakajima ◽

Takashi Yoshimoto ◽

Toshiro Kidera ◽

Katsunori Obata ◽

Shin Yokoyama ◽

...

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Silicon nitride gate dielectric for top-gated carbon nanotube field effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1824048 ◽

2004 ◽

Vol 22 (6) ◽

pp. 3112 ◽

Author(s):

Shengdong Li ◽

Zhen Yu ◽

Peter J. Burke

Keyword(s):

Carbon Nanotube ◽

Silicon Nitride ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors

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Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN∕GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.1906328 ◽

2005 ◽

Vol 86 (17) ◽

pp. 172101 ◽

Author(s):

Chang Min Jeon ◽

Jong-Lam Lee

Keyword(s):

Silicon Nitride ◽

Tensile Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors

Vacuum ◽

10.1016/j.vacuum.2004.01.023 ◽

2004 ◽

Vol 74 (3-4) ◽

pp. 525-529 ◽

Author(s):

Atsushi Masuda ◽

Masahiro Totsuka ◽

Tomoki Oku ◽

Ryo Hattori ◽

Hideki Matsumura

Keyword(s):

Gallium Arsenide ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films

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Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors

ECS Transactions ◽

10.1149/07204.0257ecst ◽

2016 ◽

Vol 72 (4) ◽

pp. 257-262 ◽

Author(s):

D. Ge ◽

D. Qian ◽

G. Chen ◽

L. Zhang ◽

N. Ren

Keyword(s):

Silicon Nitride ◽

Porous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Nitride Material

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Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric

International Journal of Electronics ◽

10.1080/00207219408926034 ◽

1994 ◽

Vol 77 (1) ◽

pp. 61-69 ◽

Author(s):

K. B. SUNDARAM ◽

S. S. SESHAN

Keyword(s):

Silicon Nitride ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Nitride Film ◽

Silicon Nitride Film ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization

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