scholarly journals Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 715 ◽  
Author(s):  
Zhi-Yue Li ◽  
Sheng-Chi Chen ◽  
Qiu-Hong Huo ◽  
Ming-Han Liao ◽  
Ming-Jiang Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
High Power ◽  
High Mobility ◽  
Electrical Performance ◽  
Glass Substrates ◽  
Sputtering Power ◽  
High Carrier

In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film’s crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm2·V−1·s−1, a carrier concentration of 9.11 × 1018 cm−3, and a resistivity of 2.19 × 10−4 Ω·m.

scholarly journals In-Sn-Zn Oxide Nanocomposite Films with Enhanced Electrical Properties Deposited by High-Power Impulse Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2016
Author(s):  
Hui Sun ◽  
Zhi-Yue Li ◽  
Sheng-Chi Chen ◽  
Ming-Han Liao ◽  
Jian-Hong Gong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
High Power ◽  
Nanocomposite Films ◽  
Electrical Performance ◽  
Glass Substrates ◽  
Pulse Off Time ◽  
Off Time ◽  
Cycle Pulse

In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the duty cycle (pulse off-time) on the microstructures and electrical performance of the films was investigated. The results showed that ITZO thin films prepared by HiPIMS were dense and smooth compared to thin films prepared by direct-current magnetron sputtering (DCMS). With the pulse off-time increasing from 0 μs (DCMS) to 2000 μs, the films’ crystallinity enhanced. When the pulse off-time was longer than 1000 μs, In2O3 structure could be detected in the films. The films’ electrical resistivity reduced as the pulse off-time extended. Most notably, the optimal resistivity of as low as 4.07 × 10−3 Ω·cm could be achieved when the pulse off-time was 2000 μs. Its corresponding carrier mobility and carrier concentration were 12.88 cm2V−1s−1 and 1.25 × 1020 cm−3, respectively.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

Silver Thin Films Deposited by Compact Magnetron Sputtering System

2010 ◽  
Vol 93-94 ◽  
pp. 413-416 ◽  
Author(s):  
N. Promros ◽  
Boonchoat Paosawatyanyong
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Input Power ◽  
Grain Structure ◽  
Plasma Parameters ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Silver Thin Films ◽  
Alloy Magnet ◽  
Sputtering System

A compact dc magnetron sputtering system capable of silver thin films depositions was designed and constructed. The novel small footprint sputtering head with target diameter of 52 mm was constructed utilizing powerful neodymium alloy magnet. Silver metal was sputter-deposited under various powers. Plasma parameters were analyzed by using the sweeping-bias single langmuir probe. The electron temperatures of the plasma glow were constant at approximately 2 eV even with the increasing of input power whereas plasma density increases with the increasing of the input power. The X-ray diffraction analysis (XRD) and scanning electron microscope (SEM) were used to study the crystalline structure and the surface morphology of the obtained silver thin films. Crystalline orientations of (111) and (200) in the silver films deposited on slide glass substrates were revealed from XRD pattern. The highest degrees of (111) and (200) orientations was obtained at the sputtering power between 0.228 and 0.265 Wcm-2. Sub-micron crystalline silver grain structure were observed using SEM micrographs. Facetted grain size and deposition rate of silver thin films increases as the sputtering power increases.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

In-Ga-Zn-O thin films with tunable optical and electrical properties prepared by high-power impulse magnetron sputtering

2018 ◽  
Vol 658 ◽  
pp. 27-32 ◽  
Author(s):  
J. Rezek ◽  
J. Houška ◽  
M. Procházka ◽  
S. Haviar ◽  
T. Kozák ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
High Power ◽  
Optical And Electrical Properties

MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850006 ◽  
Author(s):  
YANG WANG ◽  
CHENGBIAO WANG ◽  
ZHIJIAN PENG ◽  
QI WANG ◽  
XIULI FU
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Interstitial Zinc ◽  
Sputtering Power

Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.

Bandgap engineered high mobility indium oxide thin films for photovoltaic applications

2011 ◽  
Vol 1315 ◽  
Author(s):  
R.K. Gupta ◽  
K. Ghosh ◽  
P.K. Kahol
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Indium Oxide ◽  
Growth Temperature ◽  
High Mobility ◽  
Optical Transparency ◽  
Metallic Behavior ◽  
Photovoltaic Applications

ABSTRACTMagnesium and titanium doped indium oxide (IMTO) thin films were grown using pulsed laser deposition technique. Magnesium was added to enhance the bandgap, whereas titanium was added to improve carrier concentrations and mobility of indium oxide films. The effect of growth temperature on structural, optical, and electrical properties were studied. It was observed that the optical transparency of the films strongly depends on growth temperature and increases with increase in growth temperature. The films grown at 600 °C showed optical transparency > 85%. We observed widening in bandgap of indium oxide by doping with magnesium and titanium. The bandgap of IMTO films increases with increase in growth temperature. The maximum bandgap of 3.9 eV was observed for film grown at 600 °C. It was observed that growth temperature strongly affects the electrical properties such as resistivity, carrier concentration, and mobility. The electrical resistivity and mobility of the films increases with increase in growth temperature. On the other hand, carrier concentration decreases with increase in growth temperature. Temperature dependence electrical resistivity measurements showed that films grown at low temperatures are semiconducting in nature, while films grown at high temperature showed transition from semiconducting to metallic behavior. These wide bandgap, highly transparent, and high mobility films could be used for photovoltaic applications.

scholarly journals Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 955 ◽  
Author(s):  
Yingrui Sui ◽  
Yu Zhang ◽  
Dongyue Jiang ◽  
Wenjie He ◽  
Zhanwu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Low Cost ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Electrical Performance ◽  
Annealing Conditions ◽  
Maximum Value ◽  
Coating Method ◽  
High Carrier

Cu2MgxZn1−xSnS4 (0 ≤ x ≤0.6) thin films were prepared by a simple, low-temperature (300 °C) and low-cost sol–gel spin coating method followed by post-annealing at optimum conditions. We optimized the annealing conditions and investigated the effect of Mg content on the crystalline quality, electrical and optical performances of the Cu2MgxZn1−xSnS4 thin films. It was found that the Cu2MgxZn1−xSnS4 film annealed at 580 °C for 60 min contained large grain, less grain boundaries and high carrier concentration. Pure phase kesterite Cu2MgxZn1−xSnS4 (0 ≤ x ≤ 0.6) thin films were obtained by using optimal annealing conditions; notably, the smaller Zn2+ ions in the Cu2ZnSnS4 lattice were replaced by larger Mg2+ ions. With an increase in x from 0 to 0.6, the band gap energy of the films decreased from 1.43 to 1.29 eV. When the ratio of Mg/Mg + Zn is 0.2 (x = 0.2), the grain size of Cu2MgxZn1−xSnS4 reaches a maximum value of 1.5 μm and the surface morphology is smooth and dense. Simultaneously, the electrical performance of Cu2MgxZn1−xSnS4 thin film is optimized at x = 0.2, the carrier concentration reaches a maximum value of 3.29 × 1018 cm−3.

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