scholarly journals Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Lihong Su ◽  
Zhou Yang ◽  
Xitong Wang ◽  
Ziao Zou ◽  
Bo Wang ◽  
...  
Keyword(s):  
Future Development ◽  
Carrier Lifetime ◽  
Electron Tunneling ◽  
High Mobility ◽  
Xps Analysis ◽  
Manganese Ions ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Graphene Content ◽  
P Type

We report a novel Mn-Co-Ni-O (MCN) nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene. With an increase of graphene content, the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type. The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN, neutralizing holes in the MCN nanoparticles. XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states. Unlike traditional semiconductor devices, electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN. The new composite film demonstrates inherent flexibility, high mobility, short carrier lifetime, and high carrier concentration. This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.

scholarly journals Perovskite oxides as transparent semiconductors: a review

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Haiying He ◽  
Zhihao Yang ◽  
Yonghang Xu ◽  
Andrew T. Smith ◽  
Guangguang Yang ◽  
...  
Keyword(s):  
Transparent Conducting Oxides ◽  
High Mobility ◽  
Perovskite Oxides ◽  
High Carrier Concentration ◽  
Trade Off ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
High Carrier ◽  
P Type ◽  
Transparent Semiconductors

Abstract Traditional transparent conducting oxides (TCOs) have been widely used for various optoelectronic applications, but have the trade-off between conductivity and transmittance. Recently, perovskite oxides, with structural and chemical stability, have exhibited excellent physical properties as new TCOs. We focus on SrVO3-based perovskites with a high carrier concentration and BaSnO3-based perovskites with a high mobility for n-type TCOs. In addition, p-type perovskites are discussed, which can serve as potential future options to couple with n-type perovskites to design full perovskite based devices.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

scholarly journals Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Deng-Feng Li ◽  
Min Luo ◽  
Bo-Lin Li ◽  
Cheng-Bing Wu ◽  
Bo Deng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
First Principles ◽  
Ionization Energy ◽  
Formation Energy ◽  
First Principles Calculations ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type ◽  
Codoping Method

By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of singleNScan be lowered by introducing theIIIZn-NS(III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.

Beryllium-Implanted P-Type GaN with High Carrier Concentration

2001 ◽  
Vol 40 (Part 2, No. 5A) ◽  
pp. L417-L419 ◽  
Author(s):  
Chang-Chin Yu ◽  
Chen-Fu Chu ◽  
Juen-Yen Tsai ◽  
Chia-Feng Lin ◽  
Wen-How Lan ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
High Carrier Concentration ◽  
High Carrier ◽  
P Type

Systematic study of methanol addition to enhance the film development of APCVD tin oxide

2011 ◽  
Vol 1323 ◽  
Author(s):  
Joop van Deelen ◽  
Ioanna Volintiru ◽  
Paul Poodt
Keyword(s):  
Tin Oxide ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Carrier Concentration ◽  
Main Effect ◽  
Stagnant Point ◽  
High Carrier ◽  
Film Development

ABSTRACTUndoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor. By adding methanol during the deposition process ten times more conductive SnO2 films are obtained, with remarkably high mobility values of up to 55 cm2/Vs. The investigations on the morphological and structural properties indicate that the main effect of methanol is the densification of the SnO2 films, which probably causes the improvement in the electrical properties. In all conditions the nucleation and coalescence phases take place very early in the growth. The films are already very conductive at a thickness below 10 nm, which is very beneficial to applications that have strict requirements in terms of film transparency. This high conductivity was attributed to a high carrier concentration, obtained without intentional doping.

Preparation and Analysis of Sputtered Cu2ZnSnSe4 Thin Films

2012 ◽  
Vol 463-464 ◽  
pp. 602-606 ◽  
Author(s):  
Dong Hau Kuo ◽  
Hsien Pen Wu
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
X Ray Diffraction ◽  
High Carrier Concentration ◽  
Energy Dispersion Spectroscopy ◽  
X Ray ◽  
Sputtered Films ◽  
High Carrier ◽  
P Type

Cu2ZnSnSe4(CZTSe) thin films with the advantages of low cost, abundance in resources, and the suitable band-gap of 0.9~1.1 eV have been the potential materials for solar cells, though the Cu(In,Ga)Se2 thin films have received most of the attentions. In this study, CZTSe thin films were prepared by direct-current (D.C.) sputtering using three self-made CZTSe targets in different compositions. The sputtered films displayed a preferred orientation in (112) by the X-ray diffraction analysis. The films were also characterized by field-emission scanning electron microscopy and energy dispersion spectroscopy. The films had the band-gap of 0.8~1.08 eV analyzed by absorption spectroscopy. CZTSe films were p-type and had a low electrical conductivity of 10-3 ohm-cm and a high carrier concentration of 1020~1021cm-2.

Codoping Effects and Electrical Properties in Sol-Gel Li-Al Doped Zinc Oxide

2010 ◽  
Vol 663-665 ◽  
pp. 546-550
Author(s):  
Hong En Nian ◽  
Eui Jung Kim ◽  
Yuan Zhou ◽  
Xiu Feng Ren ◽  
Yu Na Pang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
X Ray Diffraction ◽  
High Carrier Concentration ◽  
X Ray ◽  
Polycrystalline Hexagonal Wurtzite Structure ◽  
High Carrier ◽  
P Type

Li and Al codoped ZnO (LAZO) thin films have been prepared by sol-gel method. The electrical and structural properties of the LAZO films have been investigated. X-ray diffraction (XRD) results showed that the prepared LAZO films had a polycrystalline hexagonal wurtzite structure. X-ray photoelectron spectrometer (XPS) measurements indicated that our sol-gel prepared films were of high purity and codoped with Li and Al evidenced by peaks centered at 74.1 and 55.6 eV. The resulting LAZO films were p-type, and had a low resistivity in the range of 10-3~100 Ωcm, and high carrier concentration in the range of 1014~1018 cm-3.

Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb

2009 ◽  
Vol 95 (2) ◽  
pp. 022101 ◽  
Author(s):  
J. M. Qin ◽  
B. Yao ◽  
Y. Yan ◽  
J. Y. Zhang ◽  
X. P. Jia ◽  
...  
Keyword(s):  
High Pressure ◽  
Carrier Concentration ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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