Analysis of the spectral dependent microwave characteristics of 1.3 μm DFB Laser at different temperatures

Author(s):  
Te-Hua Liu ◽  
Chieh Lo ◽  
Hao-Tien Cheng ◽  
Yun-Cheng Yang ◽  
Chao-Hsin Wu
2007 ◽  
Vol 336-338 ◽  
pp. 262-264
Author(s):  
Hui Xing Lin ◽  
Xiang Yu Zhao ◽  
Ai Min Yang ◽  
Hua Xin Li ◽  
Wei Chen ◽  
...  

In this study, 2BaO-3B2O3 (BB) glass was used as a sintering aid to lower the sintering temperature of Ba2Ti9O20 ceramics. Microwave Characteristics of the BB-added Ba2Ti9O20 ceramics sintered at different temperatures were investigated. The crystalline phases of BB-Ba2Ti9O20 ceramics are Ba2Ti9O20, BaTi(BO3)2 and TiO2. Good microwave dielectric properties (εr = 26, Q*f = 28770GHz and τf = 14.6ppm/oC) were obtained by sintering the BB-added Ba2Ti9O20 ceramics at 1040oC for 2 h.


1997 ◽  
Vol 484 ◽  
Author(s):  
Jie Dong ◽  
Akinoi Ubukata ◽  
Koh Matsumoto

AbstractIn this study, we demonstrate the growth of highly compressively strained InGaAs/JnGaAsP quantum well structures with large well thiclmess by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photolumineswnce characteristics of quantum wells grown at different temperatures, it is clarified that a relatively high quality quantum well layer emittig at 2.0 μ, can be obtained at a growth temperature of 650°C. 1.95-μm-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated. Double quantum-well DFB laser operating at 1.95 μm exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-μm-wavelength DFB laser is also described.


2012 ◽  
Vol 430-432 ◽  
pp. 146-149 ◽  
Author(s):  
Wen Wang ◽  
Cheng Guo Wang ◽  
Yu Guo

Fe3O4/C composites were prepared by using Fe and polyacrylonitrile (PAN) as precursors, and then heat-treated at temperatures of 600,700 and 800 °C, respectively. The phase composition of the composites at different temperatures was analyzed by X-ray diffraction, and Fe reacted with O from PAN to form Fe3O4, which contributed to the improvement of magnetic loss of the carbon matrix. Electromagnetic and microwave absorption properties of the composites were investigated. The results show that the values of real and imaginary part of permittivity were all increased as the temperature increasing, and also the microwave absorption capability was improved.


2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Hai-Xia Guo ◽  
Zai-Jin Li ◽  
Hui Li ◽  
Feng Gao ◽  
Hai-Bin Tang ◽  
...  

A distributed feedback (DFB) laser of 808 nm is produced in this paper whose optical power is 2 W, cavity length is 3 mm, and injecting width is 200 μm. A second-order grating formed into an InGaP/GaAs/InGaP multilayer structure provides the optical distributed feedback. The holographic lithography method is adopted to make Bragg gratings in p-waveguide layer (Λ = 240 nm) of the GaAs epitaxial wafers. The best experimental conditions are determined by analyzing the surface morphology and three-dimensional holographic grating. In addition, the output power data and wavelength of the distributed feedback laser emitting at different temperatures are presented. And the wavelength varies with temperature at a rate of 0.062 nm/K. Finally, the conclusion is drawn that this kind of DFB laser has a better temperature stabilized wavelength and narrower line width.


Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.


Author(s):  
Uwe Lücken ◽  
Joachim Jäger

TEM imaging of frozen-hydrated lipid vesicles has been done by several groups Thermotrophic and lyotrophic polymorphism has been reported. By using image processing, computer simulation and tilt experiments, we tried to learn about the influence of freezing-stress and defocus artifacts on the lipid polymorphism and fine structure of the bilayer profile. We show integrated membrane proteins do modulate the bilayer structure and the morphology of the vesicles.Phase transitions of DMPC vesicles were visualized after freezing under equilibrium conditions at different temperatures in a controlled-environment vitrification system. Below the main phase transition temperature of 24°C (Fig. 1), vesicles show a facetted appearance due to the quasicrystalline areas. A gradual increase in temperature leads to melting processes with different morphology in the bilayer profile. Far above the phase transition temperature the bilayer profile is still present. In the band-pass-filtered images (Fig. 2) no significant change in the width of the bilayer profile is visible.


Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.


1977 ◽  
Vol 16 (01) ◽  
pp. 30-35 ◽  
Author(s):  
N. Agha ◽  
R. B. R. Persson

SummaryGelchromatography column scanning has been used to study the fractions of 99mTc-pertechnetate, 99mTcchelate and reduced hydrolyzed 99mTc in preparations of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn). The labelling yield of 99mTc-EDTA(Sn) chelate was as high as 90—95% when 100 μmol EDTA · H4 and 0.5 (Amol SnCl2 was incubated with 10 ml 99mTceluate for 30—60 min at room temperature. The study of the influence of the pH-value on the fraction of 99mTc-EDTA shows that pH 2.8—2.9 gave the best labelling yield. In a comparative study of the labelling kinetics of 99mTc-EDTA(Sn) and 99mTc- DTPA(Sn) at different temperatures (7, 22 and 37°C), no significant influence on the reduction step was found. The rate constant for complex formation, however, increased more rapidly with increased temperature for 99mTc-DTPA(Sn). At room temperature only a few minutes was required to achieve a high labelling yield with 99mTc-DTPA(Sn) whereas about 60 min was required for 99mTc-EDTA(Sn). Comparative biokinetic studies in rabbits showed that the maximum activity in kidneys is achieved after 12 min with 99mTc-EDTA(Sn) but already after 6 min with 99mTc-DTPA(Sn). The long-term disappearance of 99mTc-DTPA(Sn) from the kidneys is about five times faster than that for 99mTc-EDTA(Sn).


1985 ◽  
Vol 54 (02) ◽  
pp. 533-538 ◽  
Author(s):  
Wilfried Thiel ◽  
Ulrich Delvos ◽  
Gert Müller-Berghaus

SummaryA quantitative determination of soluble fibrin in plasma was carried out by affinity chromatography. For this purpose, desAA-fibrin and fibrinogen immobilized on Sepharose 4B were used at the stationary side whereas batroxobin-induced 125I-desAA-fibrin or thrombin-induced 125I-desAABB-fibrin mixed with plasma containing 131I-fibrinogen represented the fluid phase. The binding characteristics of these mixtures to the immobilized proteins were compared at 20° C and 37° C. Complete binding of both types of fibrin to the immobilized desAA-fibrin was always seen at 20° C as well as at 37° C. However, binding of soluble fibrin was accompanied by substantial binding of fibrinogen that was more pronounced at 20° C. Striking differences depending on the temperature at which the affinity chromatography was carried out, were documented for the fibrinogen-fibrin interaction. At 20° C more than 90% of the applied desAA-fibrin was bound to the immobilized fibrinogen whereas at 37° C only a mean of 17% were retained at the fibrinogen-Sepharose column. An opposite finding with regard to the tested temperature was made with the desAABB-fibrin. Nearly complete binding to insolubilized fibrinogen was found at 37° C (95%) but only 58% of the desAABB-fibrin were bound at 20° C. The binding patterns did not change when the experiments were performed in the presence of calcium ions. The opposite behaviour of the two types of soluble fibrin to immobilized fibrinogen at the different temperatures, together with the substantial binding of fibrinogen in the presence of soluble fibrin to insolubilized fibrin in every setting tested, devaluates affinity chromatography as a tool in the quantitative assessment of soluble fibrin in patients’ plasma.


2015 ◽  
Vol 66 (3) ◽  
pp. 265-274 ◽  
Author(s):  
Y Cao ◽  
ÉM Neif ◽  
W Li ◽  
J Coppens ◽  
N Filiz ◽  
...  

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