Sequential‐combined solar energy assisted hot air and hot air‐assisted radio frequency drying to produce high quality dried whole apricots: an optimization study for process parameters

Author(s):  
Hatice Neval Özbek ◽  
Ecem Bulut ◽  
Büşra Işınay ◽  
Melis Sever ◽  
Hüseyin Topçam ◽  
...  
2021 ◽  
Vol 7 (4) ◽  
pp. 259-271
Author(s):  
Hatice Neval Özbek ◽  
Aysel Elik ◽  
Melis Sever ◽  
Şakire Ecem Bulut ◽  
Derya Koçak Yanık ◽  
...  

Innovative combined solar energy assisted air and hot air assisted radio frequency drying system was used to dry unsulphured, sulphured (1 kg/ton and 2 kg/ton sulphur) and pistachio hull extract treated apricots. Unsulphured and sulphured apricots dried under sun were used as the control samples. The effects of different storage temperatures (5, 20 and 35oC) on residual sulphur content, β-carotene and microbial stability characteristics of dried apricots were studied. Also, the effect of storage temperature on the total phenolic content of dried apricots pre-treated with pistachio hull extract was investigated. The obtained results showed that the loss of sulphur and β-carotene was less in the products stored at 5oC compared to the products stored at 20 and 35oC. Sulphur treatment significantly inhibited the loss of β-carotene during storage. The maximum decrease in phenolic content of dried apricots pretreated with extract, was observed in samples stored at 20°C. In addition, extract treatment provided an advantage in terms of storage considering the microbial quality. The combined drying system caused less sulfur loss compared to sun drying.


2016 ◽  
Vol 874 ◽  
pp. 291-296 ◽  
Author(s):  
Lin Li ◽  
Jun Wang ◽  
Huai Zhong Li

An experimental study is reported to characterise the femtosecond (FS) laser grooving process for Germanium (Ge) substrates. The effects of process parameters, including laser fluence, pulse repetition rate and scan speed, on the groove characteristics, material removal rate (MRR) and heat affected zone (HAZ) size are discussed. It is shown that with properly selected process parameters, high quality micro-grooves can be obtained on Ge wafers. Recommendations are finally made on the selection of the most appropriate process parameters for FS micro-grooving of Ge substrates.


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