Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress

2006 ◽  
Vol 129 (3) ◽  
pp. 329-334 ◽  
Author(s):  
Mark R. Abel ◽  
Samuel Graham ◽  
Justin R. Serrano ◽  
Sean P. Kearney ◽  
Leslie M. Phinney
Keyword(s):  
Thermal Stress ◽  
Stress State ◽  
Spectral Characteristic ◽  
Temperature Dependence ◽  
Power Dissipation ◽  
Thermal Stresses ◽  
Stokes Shift ◽  
Stress Variation ◽  
Peak Location ◽  
Linewidth Broadening

In this work, the use of Raman Stokes peak location and linewidth broadening methods were evaluated for thermometry applications of polysilicon microheaters subjected to evolving thermal stresses. Calibrations were performed using the temperature dependence of each spectral characteristic separately, and the uncertainty of each method quantified. It was determined that the Stokes linewidth was independent of stress variation allowing for temperature determination, irrespective of stress state. However, the linewidth method is subject to greater uncertainty than the Stokes shift determination. The uncertainties for each method are observed to decrease with decreasing temperature and increasing integration times. The techniques were applied to mechanically constrained electrically active polysilicon microheaters. Results revealed temperatures in excess of 500°C could be achieved in these devices. Using the peak location method resulted in an underprediction of temperature due to the development of a relative compressive thermal stress with increasing power dissipation.

scholarly journals Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2603 ◽  
Author(s):  
Zhiyong Chen ◽  
Meifeng Guo ◽  
Rong Zhang ◽  
Bin Zhou ◽  
Qi Wei
Keyword(s):  
Thermal Stress ◽  
Natural Frequency ◽  
Frequency Conversion ◽  
Thermal Stresses ◽  
Sensors And Actuators ◽  
Stress Variation ◽  
Rigid Frame ◽  
Measured Stress ◽  
Stress Isolation ◽  
Frequency Variations

The mechanical stress in silicon-on-glass MEMS structures and a stress isolation scheme were studied by analysis and experimentation. Double-ended tuning forks (DETFs) were used to measure the stress based on the stress-frequency conversion effect. Considering the coefficients of thermal expansion (CTEs) of silicon and glass and the temperature coefficient of the Young’s modulus of silicon, the sensitivity of the natural frequency to temperature change was analyzed. A stress isolation mechanism composed of annular isolators and a rigid frame is proposed to prevent the structure inside the frame from being subjected to thermal stresses. DETFs without and with one- or two-stage isolation frames with the orientations <110> and <100> were designed, the stress and natural frequency variations with temperature were simulated and measured. The experimental results show that in the temperature range of −50 °C to 85 °C, the stress varied from −18 MPa to 10 MPa in the orientation <110> and −11 MPa to 5 MPa in the orientation <100>. For the 1-stage isolated DETF of <110> orientation, the measured stress variation was only 0.082 MPa. The thermal stress can be mostly rejected by a stress isolation structure, which is applicable in the design of stress-sensitive MEMS sensors and actuators.

An Investigation of Thermal Stress Ranges Under Stratification Loadings

1991 ◽  
Vol 113 (2) ◽  
pp. 326-331
Author(s):  
T. H. Liu ◽  
E. L. Cranford
Keyword(s):  
Thermal Stress ◽  
Stress State ◽  
Support System ◽  
Thermal Condition ◽  
Thermal Stresses ◽  
Piping System ◽  
Total Stress ◽  
Line System ◽  
Surge Line ◽  
Transient Thermal

This paper deals with a unique and severe stratification phenomena in the pressurizer surge line piping system. The methodology used in the calculation of total stress state includes pressure stresses from internal pressure, global thermal stresses from the constraining of the system by supports, local thermal stresses from hot/cold stratified condition, and transient thermal stresses in the pipe and at structural discontinuities. Special discussion on the interpolation to obtain moment loadings from one state of thermal condition to the next with nonlinear gapped support system is presented. Finally, the thermal cycling associated with operating transients in the surge line system is also addressed.

Three Turnaround Heat Treating Studies

2003 ◽  
Author(s):  
Jaan Taagepera ◽  
Marty Clift ◽  
D. Mike DeHart ◽  
Keneth Marden
Keyword(s):  
Heat Treatment ◽  
Finite Element Analysis ◽  
Finite Element ◽  
Thermal Stress ◽  
Thermal Stresses ◽  
Heat Treating ◽  
Element Analysis ◽  
Stress Profiles ◽  
Insight Into

Three vessel modifications requiring heat treatment were analyzed prior to and during a planned turnaround at a refinery. One was a thick nozzle that required weld build up. This nozzle had been in hydrogen service and required bake-out to reduce the potential for cracking during the weld build up. Finite element analysis was used to study the thermal stresses involved in the bake-out. Another heat treatment studied was a PWHT of a nozzle replacement. The heat treatment band and temperature were varied with location in order to minimize cost and reduction in remaining strength of the vessel. Again, FEA was used to provide insight into the thermal stress profiles during heat treatment. The fmal heat treatment study was for inserting a new nozzle in a 1-1/4Cr-1/2Mo reactor. While this material would ordinarily require PWHT, the alteration was proposed to be installed without PWHT. Though accepted by the Jurisdiction, this nozzle installation was ultimately cancelled.

Steady-State Thermal Stresses in Wedge-Shaped Cutting Tools

1975 ◽  
Vol 97 (3) ◽  
pp. 1060-1066
Author(s):  
P. F. Thomason
Keyword(s):  
Thermal Stress ◽  
Steady State ◽  
Metal Cutting ◽  
Thermal Stresses ◽  
Heat Conduction Problem ◽  
Equivalent Stress ◽  
Cutting Tools ◽  
Thermoelastic Stress ◽  
Plastic State ◽  
Steady State Heat

Closed form expressions for the steady-state thermal stresses in a π/2 wedge, subject to constant-temperature heat sources on the rake and flank contact segments, are obtained from a conformal mapping solution to the steady-state heat conduction problem. It is shown, following a theorem of Muskhelishvili, that the only nonzero thermal stress in the plane-strain wedge is that acting normal to the wedge plane. The thermal stress solutions are superimposed on a previously published isothermal cutting-load solution, to give the complete thermoelastic stress distribution at the wedge surfaces. The thermoelastic stresses are then used to determine the distribution of the equivalent stress, and this gives an indication of the regions on a cutting tool which are likely to be in the plastic state. The results are discussed in relation to the problems of flank wear and rakeface crater wear in metal cutting tools.

Thermal stress state of cryogenic high-pressure vessels during chilling and pressurization. Report no. 1. Method of calculation

1986 ◽  
Vol 18 (1) ◽  
pp. 87-92
Author(s):  
A. S. Tsybenko ◽  
B. A. Kuranov ◽  
A. D. Chepurnoi ◽  
V. A. Shaposhnikov ◽  
N. G. Krishchuk
Keyword(s):  
High Pressure ◽  
Thermal Stress ◽  
Stress State ◽  
Pressure Vessels ◽  
Thermal Stress State ◽  
Method Of Calculation

Modelling of Convective Melt Flow and Interface Shape in Commercial Bridgman-Stockbarger Growth of CdZnTe

2000 ◽  
Author(s):  
Toby D. Rule ◽  
Ben Q. Li ◽  
Kelvin G. Lynn
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
Solute Transport ◽  
Latent Heat ◽  
Thermal Stresses ◽  
Radiation Detector ◽  
Time History ◽  
High Quality ◽  
Melt Convection ◽  
The Impact

Abstract CdZnTe single crystals for radiation detector and IR substrate applications must be of high quality and controlled purity. The growth of such crystals from a melt is very difficult due to the low thermal conductivity and high latent heat of the material, and the ease with which dislocations, twins and precipitates are introduced during crystal growth. These defects may be related to solute transport phenomena and thermal stresses associated with the solidification process. As a result, production of high quality material requires excellent thermal control during the entire growth process. A comprehensive model is being developed to account for radiation and conduction within the furnace, thermal coupling between the furnace and growth crucible, and finally the thermal stress fields within the growing crystal which result from the thermal conditions imposed on the crucible. As part of this effort, the present work examines the heat transfer and fluid flow within the crucible, using thermal boundary conditions obtained from experimental measurements. The 2-D axisymetric numerical model uses the deforming finite element method, with allowance made for melt convection, solidification with latent heat release and conjugate heat transfer between the solid material and the melt. Results are presented for several stages of growth, including a time-history of the solid-liquid interface (1365 K isotherm). The impact of melt convection, thermal end conditions and furnace temperature gradient on the growth interface is evaluated. Future work will extend the present model to include radiation exchange within the furnace, and a transient analysis for studying solute transport and thermal stress.

Numerical Study of Thermal Stresses in a Planar Solid Oxide Fuel Cell Stack

2017 ◽  
Author(s):  
Cun Wang ◽  
Tao Zhang ◽  
Cheng Zhao ◽  
Jian Pu
Keyword(s):  
Thermal Stress ◽  
Fuel Cell ◽  
Solid Oxide Fuel Cell ◽  
Thermal Stresses ◽  
Coefficient Of Thermal Expansion ◽  
Numerical Study ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Compressive Loads ◽  
Cte Mismatch

A three dimensional numerical model of a practical planar solid oxide fuel cell (SOFC) stack based on the finite element method is constructed to analyze the thermal stress generated at different uniform temperatures. Effects of cell positions, different compressive loads, and coefficient of thermal expansion (CTE) mismatch of different SOFC components on the thermal stress distribution are investigated in this work. Numerical results indicate that the maximum thermal stress appears at the corner of the interface between ceramic sealants and cells. Meanwhile the maximum thermal stress at high temperature is significantly larger than that at room temperature (RT) and presents linear growth with the increase of operating temperature. Since the SOFC stack is under the combined action of mechanical and thermal loads, the distribution of thermal stress in the components such as interconnects and ceramic sealants are greatly controlled by the CTE mismatch and scarcely influenced by the compressive loads.

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