Experimental Test and Estimation of the Equivalent Thermoelectric Properties for a Thermoelectric Module

2021 ◽  
Vol 143 (12) ◽  
Author(s):  
Ding Luo ◽  
Ruochen Wang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Experimental Test ◽  
Thermoelectric Module ◽  
Element Model ◽  
Internal Resistance ◽  
Open Circuit ◽  
Closed Circuit ◽  
Te Material

Abstract When analyzing and optimizing the performance of thermoelectric (TE) devices in theory, Seebeck coefficient, thermal conductivity, and electrical resistivity are indispensable TE properties. However, most manufacturers do not provide or overestimate these data. Under the consideration of temperature dependence, this paper discloses an experimental measurement approach to estimate the equivalent Seebeck coefficient, thermal conductivity, and electrical resistivity of a TE module. A thermal resistance network is also established to work out the hot and cold side temperatures of TE legs. Based on a designed test bench, required temperature and electrical parameters in both open circuit and closed circuit are measured and recorded, where the data of open circuit are used to calculate the equivalent Seebeck coefficient and thermal conductivity, and the data of closed circuit are used to calculate the equivalent electrical resistivity. To eliminate the error of parasitic internal resistance, a thermal-electric finite element model is adopted to modify the equivalent electrical resistivity. The modification results indicate that the equivalent internal resistance is about 1.033 times the real internal resistance, and the ratio is related to the working temperature. This work provides a new idea to obtain the TE material properties via an experimental test.

Thermoelectric Module of P-Type Ca-Co-O/N-Type ZnO Thin Films

2012 ◽  
Vol 622-623 ◽  
pp. 726-733 ◽  
Author(s):  
Weerasak Somkhunthot ◽  
Nuwat Pimpabute ◽  
Tosawat Seetawan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Electrical Power ◽  
Thermoelectric Module ◽  
Preliminary Test ◽  
Internal Resistance ◽  
Open Circuit ◽  
P Type

Thin films thermoelectric module fabricated by pulsed-dc magnetron sputtering system using Ca3Co4O9(p-type) and ZnO (n-type) targets of 60 mm diameter and 2.5 mm thickness, which were made from powder precursor, and obtained by solid state reaction. Thin films of p-Ca-Co-O (Seebeck coefficient = 143.85 µV/K, electrical resistivity = 4.80 mΩm, power factor = 4.31 µW/m K2) and n-ZnO (Seebeck coefficient =229.24 µV/K, electrical resistivity = 5.93 mΩm, power factor = 8.86 µW/m K2) were used to make a thermoelectric module, which consist of four pairs of legs connected by copper electrodes (0.5 mm thickness, 3.0 mm width, and 3.0-8.0 mm length). Each leg is 3.0 mm width, 20.0 mm length, and 0.44 µm thickness on a glass substrate of 1.0 mm thickness in dimension 25.0x50.0 mm2. For preliminary test, a module was used to thermoelectric power generation. It was found that the open circuit voltage increased with increasing temperature difference from 3 mV at 5 K up to 20 mV at 78 K. The internal resistance of a module reached a value of 14.52 MΩ. This test indicated that a module can be generated the electrical power. Therefore, it can be used as an important platform for further thin films thermoelectric module research.

Performance of Nanoscale Quantum Well Thermoelectrics

2007 ◽  
Author(s):  
Daniel Krommenhoek ◽  
Norbert Elsner ◽  
Saeid Ghamaty ◽  
Velimir Jovanovic
Keyword(s):  
Thermal Conductivity ◽  
Power Generation ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Thermoelectric Module ◽  
Conductivity Data ◽  
Resistivity Data ◽  
P Type ◽  
Bulk Thermal Conductivity

Alternating 10 nm thermoelectric films of N-type Si/SiGe and P-type Si/SiGe and B4C/B9C have been fabricated on various substrates, electrically joined and thermoelectric properties measured from 40°K up to 700°K. These nanoscale thermoelectric films demonstrate excellent thermoelectric power factors significantly higher than current bulk thermoelectric materials. The implications of the measured thermoelectric Seebeck coefficient data and electrical resistivity data for alternating 10 nm films that are grown to thicknesses of one to 10 microns means efficiencies of 15% at 200°C temperature differences and efficiencies of 30% at 400°C temperature differences. Utilizing Seebeck and resistivity data obtained by Hi-Z and UCSD, along with published bulk thermal conductivity data, which is conservative, unique thermoelectric module and generator concept designs for both power generation and cooling are presented over wide temperature and power ranges.

Thermoelectric Properties and Power Generation of p–Ca3Co4O9 and n–Sr0.87La0.13TiO3 Thermoelectric Modules

2016 ◽  
Vol 675-676 ◽  
pp. 679-682 ◽  
Author(s):  
Kunchit Singsoog ◽  
Chanchana Thanachayanont ◽  
Anek Charoenphakdee ◽  
Tosawat Seetawan
Keyword(s):  
Thermal Conductivity ◽  
Power Generation ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Maximum Output Power ◽  
Thermoelectric Module ◽  
Maximum Output ◽  
Te Modules ◽  
Matching Load

The Ca3Co4O9 (CCO) and Sr0.87La0.13TiO3 (SLTO) are good property of oxide thermoelectric (TE) materials. They synthesized by solid state reaction (SSR) method to study thermoelectric properties and fabrication of thermoelectric module. It was found that, synthesis of CCO shows that Seebeck coefficient, electrical resistivity, thermal conductivity and values are 130 μV K–1, 8.31 mΩ cm, 0.82 W m–1 K–1 and 0.08, respectively at 473 K. The Seebeck coefficient, electrical resistivity, thermal conductivity and ZT values of SLTO are –359 μV K–1, 2.9 mΩ m, 18.09 W m–1 K–1 and 1.13×10–3, respectively at 473 K. TE modules of CCO and SLTO were fabricated by ultra sonic soldering method. The power generation of TE modules were measured with temperature difference (ΔT) of 10–180 K. The 1 pair and 2 pairs TE modules for a maximum power generation of matching load are 19 k and 30 k, respectively. The maximum output power of 2 pairs TE module is larger than 1 pair TE module about two times.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

High-temperature thermoelectric properties of W-substituted CaMnO3

2013 ◽  
Vol 1490 ◽  
pp. 3-8 ◽  
Author(s):  
Dimas S. Alfaruq ◽  
James Eilertsen ◽  
Philipp Thiel ◽  
Myriam H Aguirre ◽  
Eugenio Otal ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Soft Chemistry ◽  
Absolute Seebeck Coefficient

AbstractThe thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.

Uni-Leg Thermoelectric Module Comprised by Coated Hybrid-Perovskite Thin Film

2019 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Flexible Electronics ◽  
Thermoelectric Module ◽  
Electrical Energy ◽  
Maximum Output ◽  
Thermoelectric Modules ◽  
Wet Process

Abstract Thermoelectric materials can convert thermal energy into electrical energy without any moving part which leads its path of application to the era of printed and flexible electronics. CsSnI3 perovskite can be a promising thermoelectric material for the next-generation energy conversion due to its intrinsic ultra-low thermal conductivity and large Seebeck coefficient but enhancement of electrical conductivity is still required. CsSnI3 can be prepared by wet process which can reduce the cost of flexible thermoelectric module. In this work, CsSnI3 thin films were fabricated by spin coating wet process. Thin films were structurally and chemically characterized using XRD and SEM. Thermoelectric properties such as electrical conductivity, Seebeck coefficient, and thermal conductivity were measured at 300 K. Uni-leg thermoelectric modules were fabricated on a glass substrate using CsSnI3 thin films. The maximum output is about 0.8 nW for 5 legs (25 mm × 3 mm × 600 nm) modules for the temperature difference of about 5°C. These results will open a new pathway to thermoelectric modules for flexible electronics in spite of low output power.

Performance and Testing of Novel Quantum Well Thermoelectric Devices

2010 ◽  
Author(s):  
Velimir Jovanovic ◽  
Saeid Ghamaty ◽  
Norbert B. Elsner ◽  
Daniel Krommenhoek ◽  
John C. Bass
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Quantum Well ◽  
Seebeck Coefficient ◽  
Coefficient Of Performance ◽  
Test Technique ◽  
Low Thermal Conductivity ◽  
Barrier Materials ◽  
Te Modules ◽  
Conversion Efficiencies

New nano-structured thermoelectric (TE) materials have been developed and fabricated that have much higher conversion efficiencies than the state-of-the-art (SOTA) bulk thermoelectrics. In these new quantum well (QW) materials, the carrier and barrier materials (in this case SiGe and Si) are confined in alternating layers less than 10 nm thick, and this confinement has been shown to result in greatly improved TE properties (Seebeck coefficient, electrical resistivity and thermal conductivity) leading to higher TE Figure of Merit, ZT, conversion efficiencies and Coefficient of Performance (COP) for cooling applications than for SOTA thermoelectrics. From the most recent QW test data, ZTs greater than 3 at room temperature have been obtained which constitutes a significant improvement over the SOTA bulk thermoelectrics which have ZTs less than 1. QW materials have the best measured TE power factor (Seebeck coefficient squared divided by electrical resistivity) and, combined with low thermal conductivity substrates, should provide very high efficiency TE modules. The QW TE materials with ZTs greater than 3 lead to conversion efficiencies greater than 20 percent, which allows for much wider commercial applications, particularly in the applications such as the waste-heat recovery from truck engines, refrigeration, and air conditioning, where the SOTA bulk TE modules were shown to be technically feasible but economically unjustified due to low conversion efficiencies. With higher efficiency QW materials, these applications become economically attractive. The above mentioned QW TE ZTs include the effect of the substrate which degrades the overall performance, and a new test technique was developed that eliminates the effect of the substrate and for just the QW films, ZTs greater than 6 have been measured. This illustrated the importance of using a low thermal conductivity substrate in order to achieve good TE performance. In a recent QW test, a conversion efficiency corresponding to 62 percent of the Carnot efficiency was measured and this is believed to be the highest such value ever measured for a TE material. For power generation applications, QW TE generators can be designed for capacities ranging from milliwatts to kilowatts and for cooling applications with capacities ranging from watts to several tons of refrigeration. The paper discusses the effects of the thermal and electrical contact resistances and of substrate thermal conductivity on the TE performance, the status of the prototype QW TE generators and coolers being designed and fabricated, and the latest test results.

Thermal Conductivity, Electrical Resistivity, and Seebeck Coefficient of Silicon from 100 to 1300°K

1968 ◽  
Vol 167 (3) ◽  
pp. 765-782 ◽  
Author(s):  
W. Fulkerson ◽  
J. P. Moore ◽  
R. K. Williams ◽  
R. S. Graves ◽  
D. L. McElroy
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient

Thermoelectric Modules For High Temperature Waste Heat

2005 ◽  
Vol 886 ◽  
Author(s):  
Ryoji Funahashi ◽  
Toshiyuki Mihara ◽  
Masashi Mikami ◽  
Saori Urata
Keyword(s):  
Room Temperature ◽  
Open Circuit Voltage ◽  
Waste Heat ◽  
Thermal Strain ◽  
Thermoelectric Module ◽  
Internal Resistance ◽  
Open Circuit ◽  
Cold Side ◽  
Adhesive Material ◽  
Thermoelectric Modules

ABSTRACTA new adhesive material has been developed in order to obtain practically usable thermoelectric modules composed of oxide thermoelectric legs. The thermoelectric module composed of 8-pair oxide legs has been fabricated. Both hot- and cold-sides of the module were covered by alumina plates. Open circuit voltage VO and maximum power Pmax reach 0.38 V and 0.30 W, respectively at 803 K of a hot-side temperature TH and 362 K of a temperature differential ΔT between TH and cold-side temperature TC. Generating power was repeated 11 times at 873-993 K of TH and at 200-290 K of ΔT. The module was cooled down to room temperature after each generation. At third measurement internal resistance RI of the module increased by 30 %. This is due to destruction of junctions because of thermal strain. No deterioration, however, was observed in thermoelectric properties for the oxide legs.

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