Electrostatically Tunable Nanomechanical Shallow Arches
Keyword(s):
Dc Bias
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We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.
2004 ◽
Vol 14
(03)
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pp. 690-695
1977 ◽
Vol 32
(1)
◽
pp. 57-60
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Keyword(s):
Keyword(s):
2017 ◽
Keyword(s):
2017 ◽
Vol 866
◽
pp. 277-281