Growth of Carbon Nanotubes on Metal Containing Amorphous Carbon (A-C:M) Films

2007 ◽  
Author(s):  
K. P. Yung ◽  
J. Wei ◽  
B. K. Tay
Keyword(s):  
Carbon Nanotubes ◽  
Grain Size ◽  
Amorphous Carbon ◽  
Rf Magnetron Sputtering ◽  
Vacuum Arc ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Catalyst Layers ◽  
Atomic Force ◽  
Filtered Cathodic Vacuum Arc

In this study, carbon nanotubes were grown from metal containing amorphous carbon (a-C:M). a-C:M were deposited by two different techniques: RF magnetron sputtering and filtered cathodic vacuum arc (FCVA). X-ray diffraction (XRD) and atomic force microscopy (AFM) were deployed to analyze the chemical structure and morphology of the catalyst layers, respectively. The morphology of the carbon nanotubes growth was studied under Scanning electron microscopy (SEM). It was found that carbon nanotubes growth from sputtered a-C:Fe film are random orientated, while the nanotubes from FCVA a-C:M are well-aligned. SEM and AFM studies also show that the diameter of the nanotubes grown on sputtered a-C:Fe film is proportional to that of the annealed catalyst particles grain size. However, the diameter of the nanotubes from FCVA a-C:Fe film was found to be much smaller than the grain size of the catalyst particles.

Structure and Tribological Properties of Ultra-Thin Tetrahedral Amorphous Carbon (ta-C) Films

Tribology ◽  
2006 ◽  
Author(s):  
Xinchun Lu ◽  
Hui Wang ◽  
Chenhui Zhang ◽  
Jianbin Luo
Keyword(s):  
Amorphous Carbon ◽  
Tribological Properties ◽  
Electron Spectroscopy ◽  
Vacuum Arc ◽  
Wear Properties ◽  
Force Microscopy ◽  
Tetrahedral Amorphous Carbon ◽  
Atomic Force ◽  
Transmission Electron ◽  
Filtered Cathodic Vacuum Arc

Ultra-thin tetrahedral amorphous carbon (ta-C) films were deposited by the filtered cathodic vacuum arc (FCVA) technique. The thickness, structure, and topography of the films were studied by various analysis methods, such as auger electron spectroscopy (AES) depth profile, high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). A tribometer was used to investigate the tribological properties of the ta-C films. The results indicate that ta-C film with thickness less than 2 nm can be obtained by the FCVA technique. As the film thickness increases the relative intensity ratio ID/IG decreases, which means that sp3 bond in the films increases. The oxide layer cleaning procedure of silicon substrate before deposition influences the growth mode and surface roughness of the films. The ultra-thin ta-C film has the lowest friction coefficient of 0.19 and excellent anti-wear properties.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Grain Size Effect on Lattice of Ni Nanocrystals Prepared Through Polyol Method

2008 ◽  
Vol 8 (8) ◽  
pp. 4127-4131 ◽  
Author(s):  
G. S. Okram ◽  
Kh. Namrata Devi ◽  
H. Sanatombi ◽  
Ajay Soni ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
Polyol Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Nanocrystalline nickel powders were prepared with grain size 'd' in the range 40–100 nm diameters through polyol method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used for characterization. XRD of the prepared samples consistently matched with standard fcc structure of nickel without any impurity peak. Detailed analysis and calculations using Scherrer equation for (111) peak revealed systematic increase in line width and peak shifting towards lower diffraction 2θ angles with decrease in nickel to ethylene glycol mole ratio. Different values of d estimated from various peaks of each sample suggested associated microstrains in the nanograins. Values of d estimated from X-ray diffraction patterns were compared with those obtained from atomic force microscopy and scanning electron microscopy results, and discussed. Observed lattice expansion is explained, on the basis of a theoretical model of linear elasticity.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

Influence of Ammonia on the Fabrication of Aligned Carbon Nanotubes Using Thermal CVD

2011 ◽  
Vol 467-469 ◽  
pp. 312-315
Author(s):  
Gang Li ◽  
Wen Ming Cheng
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Vertical Alignment ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Aligned Carbon Nanotubes ◽  
20 Nm

Ultra-thin (20 nm) nickel catalyst films were deposited by sputtering on SiO2/Si substrates. At the pretreatments, ammonia (NH3) was conducted for different time in a thermal chemical vapor deposition (CVD) system. Pretreated samples were characterized using atomic force microscopy (AFM). After the pretreatment, acetylene was introduced into the chamber for 10 min, samples were characterized using scanning electron micrograph (SEM) and X-ray diffraction (XRD). It was concluded that NH3 pretreatment was very crucial to control the surface morphology of catalytic metals and thus to achieve the vertical alignment of carbon nanotubes (CNTs). With higher density of the Ni particles, better alignment of the CNTs can be obtained due to steric hindrance effect between neighboring CNTs.

CRYSTAL STRUCTURE AND GAS SENSING PROPERTIES OF Cu-DOPED ZINC OXIDE

2002 ◽  
Vol 16 (01n02) ◽  
pp. 314-321 ◽  
Author(s):  
CHIN HOCK ONG ◽  
JIAN HUI WANG ◽  
HAO GONG ◽  
H. S. O. CHAN
Keyword(s):  
Zinc Oxide ◽  
Structural Properties ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Residual Strains ◽  
Nano Crystal

Copper doped Zinc Oxide thin films are prepared by RF magnetron sputtering. The films are characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and other techniques. It is found that the films are composed of nano-crystal grains with typical columnar structure. The structural properties, such as preferred orientation, residual strains exist in the films, and grains size were studied. Moreover, the porous structure that related with the surface morphology of the films was discussed as it has relationship with the gas sensing property. Gas sensing property of these films was studied with the understanding of structural properties. The films were tested with NO gas. The sensitivity of the films was studied through the discussions of films structures.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

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