Fast Prediction of Temperature Evolution in Electronic Devices for Run-Time Thermal Management Applications

2010 ◽  
Author(s):  
Yizhang Yang ◽  
Sridhar Sundaram ◽  
Gamal Refai-Ahmed ◽  
Maxat Touzelbaev
Keyword(s):  
Thermal Management ◽  
Electronic Devices ◽  
Temperature Response ◽  
Temperature Evolution ◽  
Computational Time ◽  
Infinite Impulse Response ◽  
Switching Frequency ◽  
Computation Efficiency ◽  
High Switching Frequency ◽  
Run Time

Increase of non-uniform power density and high switching frequency has presented new challenges in predicting transient temperature response to fast-changing power inputs in advanced electronic devices. While the computational effort with direct calculation through the finite element model (FEM) is expensive, various methods of model reduction with drastically improved computing speed have been developed for calculation of dynamic thermal responses of the electronic systems. However, those methods’ still-considerable computational time consumption inhibits their practices in real-time temperature prediction and dynamic thermal management (DTM) applications. This work presents a fast algorithm for predicting temperature evolution in electronic devices subjected to multiple heat source excitations. It utilizes the equivalent thermal RC network for model reductions, and adopts recursive infinite impulse response (IIR) digital filters for accelerated computation in discrete time-domain. The algorithm is validated by comparison to existing convolution integral methods, yielding excellent agreement with several orders of magnitude improvement in computation efficiency. Due to its simplicity in implementation, the algorithm is very suitable for run-time evaluation of temperature response for dynamic power management applications.

High-Efficiency Transient Temperature Calculations for Applications in Dynamic Thermal Management of Electronic Devices

2013 ◽  
Vol 135 (3) ◽  
Author(s):  
Maxat N. Touzelbaev ◽  
Josef Miler ◽  
Yizhang Yang ◽  
Gamal Refai-Ahmed ◽  
Kenneth E. Goodson
Keyword(s):  
Thermal Management ◽  
Impulse Response ◽  
Semiconductor Devices ◽  
Temperature Response ◽  
Infinite Impulse Response ◽  
Transient Temperature ◽  
Modeling Tools ◽  
Dynamic Thermal Management ◽  
The Impact ◽  
Power Densities

The highly nonuniform transient power densities in modern semiconductor devices present difficult performance and reliability challenges for circuit components, multiple levels of interconnections and packaging, and adversely impact overall power efficiencies. Runtime temperature calculations would be beneficial to architectures with dynamic thermal management, which control hotspots by effectively optimizing regional power densities. Unfortunately, existing algorithms remain computationally prohibitive for integration within such systems. This work addresses these shortcomings by formulating an efficient method for fast calculations of temperature response in semiconductor devices under a time-dependent dissipation power. A device temperature is represented as output of an infinite-impulse response (IIR) multistage digital filter, processing a stream of sampled power data; this method effectively calculates temperatures by a fast numerical convolution of the sampled power with the modeled system's impulse response. Parameters such as a steady-state thermal resistance or its extension to a transient regime, a thermal transfer function, are typically used with the assumption of a linearity and time-invariance (LTI) to form a basis for device thermal characterization. These modeling tools and the time-discretized estimates of dissipated power make digital filtering a well-suited technique for a run-time temperature calculation. A recursive property of the proposed algorithm allows a highly efficient use of an available computational resource; also, the impact of all of the input power trace is retained when calculating a temperature trace. A network identification by deconvolution (NID) method is used to extract a time-constant spectrum of the device temperature response. We verify this network extraction procedure for a simple geometry with a closed-form solution. In the proposed technique, the amount of microprocessor clock cycles needed for each temperature evaluation remains fixed, which results in a linear relationship between the overall computation time and the number of temperature evaluations. This is in contrast to time-domain convolution, where the number of clock cycles needed for each evaluation increases as the time window expands. The linear dependence is similar to techniques based on FFT algorithms; in this work, however, use of z-transforms significantly decreases the amount of computations needed per temperature evaluation, in addition to much reduced memory requirements. Together, these two features result in vast improvements in computational throughput and allow implementations of sophisticated runtime dynamic thermal management algorithms for all high-power architectures and expand the application range to embedded platforms for use in a pervasive computing environment.

Comparative investigation of SiC and Si power electronic devices operating at high switching frequency

2011 ◽  
Vol 59 (4) ◽  
pp. 555-559
Author(s):  
K. Zymmer ◽  
P. Mazurek
Keyword(s):  
Schottky Diodes ◽  
Electronic Devices ◽  
Comparative Investigation ◽  
Switching Frequency ◽  
Power Electronic ◽  
Power Losses ◽  
Frequency Range ◽  
Forward Voltage ◽  
Dc Voltage ◽  
High Switching Frequency

Comparative investigation of SiC and Si power electronic devices operating at high switching frequencyThe paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/μs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10-200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.

scholarly journals Estimation of Power Losses Caused by Supraharmonics

2020 ◽  
Vol 209 ◽  
pp. 07008
Author(s):  
Alexander Novitskiy ◽  
Steffen Schlegel ◽  
Dirk Westermann
Keyword(s):  
Electronic Devices ◽  
Electrical Equipment ◽  
Switching Frequency ◽  
Power Electronic ◽  
Electrical Networks ◽  
Power Losses ◽  
Network Connection ◽  
High Switching Frequency ◽  
Measurement Results ◽  
Frequency Power

Nowadays increases the number of power electronic devices in distribution electrical networks rapidly. Modern generation and consumption units use high switching frequency power converters for the network connection and therefore cause the voltage and current distortion in the frequency range over 2 kHz (so-called “supraharmonics”) in addition to conventional harmonics. Supraharmonics cause additional power losses in electrical equipment. The goal of the offered paper is the estimation of power losses caused by supraharmonics. The estimation is based on the measurement results obtained in a real MV/LV network in Germany.

scholarly journals On Multi-Scalar Multiplication Algorithms for Register-Constrained Environments

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 605
Author(s):  
Da-Zhi Sun ◽  
Ji-Dong Zhong ◽  
Hong-De Zhang ◽  
Xiang-Yu Guo
Keyword(s):  
Electronic Devices ◽  
Additive Group ◽  
Fixed Number ◽  
Scalar Multiplication ◽  
Computation Cost ◽  
Public Key Cryptosystems ◽  
Adaptive Window ◽  
Computation Efficiency ◽  
Window Method ◽  
Constrained Environments

A basic but expensive operation in the implementations of several famous public-key cryptosystems is the computation of the multi-scalar multiplication in a certain finite additive group defined by an elliptic curve. We propose an adaptive window method for the multi-scalar multiplication, which aims to balance the computation cost and the memory cost under register-constrained environments. That is, our method can maximize the computation efficiency of multi-scalar multiplication according to any small, fixed number of registers provided by electronic devices. We further demonstrate that our method is efficient when five registers are available. Our method is further studied in detail in the case where it is combined with the non-adjacent form (NAF) representation and the joint sparse form (JSF) representation. One efficiency result is that our method with the proposed improved NAF n-bit representation on average requires 209n/432 point additions. To the best of our knowledge, this efficiency result is optimal compared with those of similar methods using five registers. Unlike the previous window methods, which store all possible values in the window, our method stores those with comparatively high probabilities to reduce the number of required registers.

scholarly journals Insulation Life Span of Low-Voltage Electric Motors—A Survey

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1738
Author(s):  
Vanessa Neves Höpner ◽  
Volmir Eugênio Wilhelm
Keyword(s):  
Life Span ◽  
Electric Motor ◽  
Low Voltage ◽  
Frequency Converter ◽  
Rate Of Change ◽  
High Rate ◽  
Switching Frequency ◽  
Electric Motors ◽  
Frequency Converters ◽  
High Switching Frequency

The use of static frequency converters, which have a high switching frequency, generates voltage pulses with a high rate of change over time. In combination with cable and motor impedance, this generates repetitive overvoltage at the motor terminals, influencing the occurrence of partial discharges between conductors, causing degradation of the insulation of electric motors. Understanding the effects resulting from the frequency converter–electric motor interaction is essential for developing and implementing insulation systems with characteristics that support the most diverse applications, have an operating life under economically viable conditions, and promote energy efficiency. With this objective, a search was carried out in three recognized databases. Duplicate articles were eliminated, resulting in 1069 articles, which were systematically categorized and reviewed, resulting in 481 articles discussing the causes of degradation in the insulation of electric motors powered by frequency converters. A bibliographic portfolio was built and evaluated, with 230 articles that present results on the factors that can be used in estimating the life span of electric motor insulation. In this structure, the historical evolution of the collected information, the authors who conducted the most research on the theme, and the relevance of the knowledge presented in the works were considered.

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